J. Eymery

4.6k total citations · 1 hit paper
155 papers, 3.8k citations indexed

About

J. Eymery is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Biomedical Engineering. According to data from OpenAlex, J. Eymery has authored 155 papers receiving a total of 3.8k indexed citations (citations by other indexed papers that have themselves been cited), including 79 papers in Electrical and Electronic Engineering, 64 papers in Condensed Matter Physics and 57 papers in Biomedical Engineering. Recurrent topics in J. Eymery's work include GaN-based semiconductor devices and materials (59 papers), Semiconductor materials and devices (37 papers) and Nanowire Synthesis and Applications (30 papers). J. Eymery is often cited by papers focused on GaN-based semiconductor devices and materials (59 papers), Semiconductor materials and devices (37 papers) and Nanowire Synthesis and Applications (30 papers). J. Eymery collaborates with scholars based in France, Russia and Germany. J. Eymery's co-authors include Christophe Durand, Maria Tchernycheva, Catherine Bougerol, F. H. Julien, Frank Fournel, C. Durand, Lars Samuelson, Lorenzo Rigutti, W. Rieß and A. Forchel and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and Advanced Materials.

In The Last Decade

J. Eymery

149 papers receiving 3.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Nanowire-based one-dimensional electronics

2006 578 citations J. Eymery et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Eymery France	31	1.7k	1.7k	1.6k	1.5k	1.1k	155	3.8k
Manfred Reiche Germany	28	2.1k 1.2×	1.1k 0.7×	2.1k 1.3×	1.5k 1.0×	1.1k 1.0×	179	4.3k
C. Kisielowski United States	27	3.6k 2.1×	955 0.6×	1.6k 1.0×	1.2k 0.8×	1.0k 0.9×	83	5.1k
Jean‐Luc Rouvière France	44	2.2k 1.3×	1.4k 0.8×	2.6k 1.7×	2.6k 1.8×	2.2k 2.0×	198	5.7k
F. Rousseaux France	29	1.2k 0.7×	658 0.4×	1.1k 0.7×	935 0.6×	2.3k 2.2×	111	3.6k
I. Vrejoiu Germany	31	3.4k 2.0×	1.3k 0.7×	908 0.6×	666 0.4×	596 0.6×	102	4.3k
Kerstin Volz Germany	42	1.7k 1.0×	1.0k 0.6×	4.8k 3.0×	1.2k 0.8×	3.5k 3.3×	388	6.7k
J. C. Bravman United States	36	1.7k 1.0×	814 0.5×	2.0k 1.2×	1.1k 0.7×	1.2k 1.1×	163	4.7k
Milos Toth Australia	40	4.0k 2.3×	1.5k 0.9×	2.2k 1.4×	563 0.4×	2.2k 2.0×	197	6.4k
Heiji Watanabe Japan	32	1.6k 0.9×	473 0.3×	4.2k 2.7×	600 0.4×	1.0k 1.0×	369	4.9k
Euijoon Yoon South Korea	34	3.3k 1.9×	908 0.5×	2.4k 1.5×	1.3k 0.9×	1.3k 1.2×	298	5.2k

Countries citing papers authored by J. Eymery

Since Specialization

Citations

This map shows the geographic impact of J. Eymery's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Eymery with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Eymery more than expected).

Fields of papers citing papers by J. Eymery

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Eymery. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Eymery. The network helps show where J. Eymery may publish in the future.

Co-authorship network of co-authors of J. Eymery

This figure shows the co-authorship network connecting the top 25 collaborators of J. Eymery. A scholar is included among the top collaborators of J. Eymery based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Eymery. J. Eymery is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Baranov, A I, Vladimir Neplokh, Dmitry V. Krasnikov, et al.. (2025). Elastic blue light-emitting diode based on InGaN/GaN microwires and SWCNT-on-PDMS matrix electrode. Journal of Materials Chemistry C. 13(19). 9779–9786.

Viola, Arnaud, B. Gilles, Matous Mrovec, et al.. (2025). Probing Strain in Individual Palladium Nanocrystals during Electrochemically Induced Phase Transitions. Journal of the American Chemical Society. 147(29). 25417–25428. 2 indexed citations

Zhou, Tao, Alexandre Reinhardt, Marie Bousquet, et al.. (2025). High-resolution high-throughput spatiotemporal strain imaging reveals loss mechanisms in a surface acoustic wave device. Nature Communications. 16(1). 2822–2822.

Bisht, Anuj, J. Eymery, Steven Leake, et al.. (2025). Giant transformation strain and rotation in Ni-Pt nanoparticles caused by atomic ordering. Acta Materialia. 294. 121129–121129.

Schülli, Tobias U., et al.. (2024). Capturing Catalyst Strain Dynamics during Operando CO Oxidation. ACS Nano. 1 indexed citations

Peres, M., L.C. Alves, Susana Cardoso, et al.. (2024). Impact of radiation damage on the photoconductor and photodiode properties of GaN core–shell p–n junction microwires. Radiation Physics and Chemistry. 224. 111945–111945.

Jakšić, M., M. Peres, L.C. Alves, et al.. (2024). Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements. ACS Applied Electronic Materials. 6(3). 1682–1692. 1 indexed citations

Tardif, Samuel, O. Castelnau, J. Eymery, et al.. (2022). LaueNN: neural-network-based hkl recognition of Laue spots and its application to polycrystalline materials. Journal of Applied Crystallography. 55(4). 737–750. 13 indexed citations

Peres, M., Susana Cardoso, L.C. Alves, et al.. (2021). Self-powered proton detectors based on GaN core–shell p–n microwires. Applied Physics Letters. 118(19). 4 indexed citations

10.

Zubialevich, Vitaly Z., Catherine Bougerol, J. Eymery, et al.. (2020). Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells. Applied Physics Letters. 117(22). 9 indexed citations

11.

Das, Subrata, F. H. Julien, N. Gogneau, et al.. (2019). Colour optimization of phosphor-converted flexible nitride nanowire white light emitting diodes. Journal of Physics Photonics. 1(3). 35003–35003. 11 indexed citations

12.

Mancini, Lorenzo, David Hernández‐Maldonado, Williams Lefebvre, et al.. (2016). Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls. Applied Physics Letters. 108(4). 26 indexed citations

13.

Favre‐Nicolin, V., J. Baruchel, H. Renevier, J. Eymery, & A. Borbély. (2015). XTOP: high-resolution X-ray diffraction and imaging. Journal of Applied Crystallography. 48(3). 620–620. 2 indexed citations

14.

Lavenus, Pierre, Andrés de Luna Bugallo, Fabien Bayle, et al.. (2014). Experimental and theoretical analysis of transport properties of core–shell wire light emitting diodes probed by electron beam induced current microscopy. Nanotechnology. 25(25). 255201–255201. 32 indexed citations

15.

Eymery, J., et al.. (2014). GaN wire-based Langmuir–Blodgett films for self-powered flexible strain sensors. Nanotechnology. 25(37). 375502–375502. 14 indexed citations

16.

Salomon, Damien, A. Dussaigne, Christophe Durand, et al.. (2013). Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications. Nanoscale Research Letters. 8(1). 61–61. 27 indexed citations

17.

Carbone, Dina, Ana Díaz, J. Eymery, et al.. (2011). Coherent x-ray wavefront reconstruction of a partially illuminated Fresnel zone plate. Optics Express. 19(20). 19223–19223. 30 indexed citations

18.

Andrieu, F., et al.. (2010). Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI). Solid-State Electronics. 54(9). 861–869. 15 indexed citations

19.

Hwang, Jeomshik, et al.. (2009). Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy. Nanotechnology. 21(1). 15602–15602. 170 indexed citations

20.

Gentile, P., et al.. (2006). Ge quantum dots growth on nanopatterned Si(001) surface: Morphology and stress relaxation study. Surface Science. 600(16). 3187–3193. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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