F. Lorut

732 total citations
51 papers, 459 citations indexed

About

F. Lorut is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films and Biomedical Engineering. According to data from OpenAlex, F. Lorut has authored 51 papers receiving a total of 459 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 17 papers in Surfaces, Coatings and Films and 12 papers in Biomedical Engineering. Recurrent topics in F. Lorut's work include Integrated Circuits and Semiconductor Failure Analysis (24 papers), Electron and X-Ray Spectroscopy Techniques (17 papers) and Semiconductor materials and devices (12 papers). F. Lorut is often cited by papers focused on Integrated Circuits and Semiconductor Failure Analysis (24 papers), Electron and X-Ray Spectroscopy Techniques (17 papers) and Semiconductor materials and devices (12 papers). F. Lorut collaborates with scholars based in France, India and Switzerland. F. Lorut's co-authors include Philip R. LeDuc, S. Moreau, Thomas Frank, Aurélie Thuaire, Lorena Anghel, C. Chappaz, L. Arnaud, R. Pantel, Thierry Épicier and L. Clément and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Lorut

49 papers receiving 451 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. Lorut France	11	298	113	109	106	73	51	459
N. Hayasaka Japan	13	415 1.4×	88 0.8×	108 1.0×	89 0.8×	55 0.8×	32	494
Andrés Yáñez Escolano Spain	8	136 0.5×	99 0.9×	182 1.7×	59 0.6×	87 1.2×	18	415
Erik M. Secula United States	11	349 1.2×	179 1.6×	182 1.7×	31 0.3×	124 1.7×	156	591
Dan Herr United States	10	206 0.7×	125 1.1×	131 1.2×	42 0.4×	76 1.0×	68	389
T. Cohen-Hyams Israel	11	226 0.8×	91 0.8×	130 1.2×	39 0.4×	10 0.1×	21	442
Andrew E Hollowell United States	11	197 0.7×	204 1.8×	44 0.4×	154 1.5×	62 0.8×	24	420
L. Clément France	9	244 0.8×	102 0.9×	143 1.3×	35 0.3×	112 1.5×	34	465
T. Bret Switzerland	17	443 1.5×	110 1.0×	152 1.4×	25 0.2×	423 5.8×	31	739
Shazia Yasin United Kingdom	11	361 1.2×	255 2.3×	67 0.6×	34 0.3×	87 1.2×	18	522
Moritz Seyfried Germany	8	166 0.6×	101 0.9×	113 1.0×	43 0.4×	65 0.9×	19	361

Countries citing papers authored by F. Lorut

Since Specialization

Citations

This map shows the geographic impact of F. Lorut's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Lorut with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Lorut more than expected).

Fields of papers citing papers by F. Lorut

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Lorut. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Lorut. The network helps show where F. Lorut may publish in the future.

Co-authorship network of co-authors of F. Lorut

This figure shows the co-authorship network connecting the top 25 collaborators of F. Lorut. A scholar is included among the top collaborators of F. Lorut based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Lorut. F. Lorut is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lorut, F., et al.. (2025). Comprehensive study of corrosion mechanisms in Integrated Circuit (IC) copper metal lines within TEM lamellae. Micron. 195. 103838–103838.

Zhang, Leifeng, et al.. (2024). Operando electrical biasing TEM experiments of Ge-rich GST thin films with FIB sample preparation. Journal of Alloys and Compounds. 1003. 175626–175626. 3 indexed citations

Portavoce, A., et al.. (2023). Te and Ge solid-state reaction: comparison between the 2D and 3D growth of α-GeTe. Journal of Materials Chemistry C. 11(9). 3306–3313. 1 indexed citations

Portavoce, A., et al.. (2023). Thermo-desorption measurements during N-doped Ge-rich Ge₂Sb₂Te₅ crystallization. Nanotechnology. 34(28). 285702–285702. 2 indexed citations

Portavoce, A., et al.. (2022). Kinetic Monte Carlo simulations of Ge–Sb–Te thin film crystallization. Nanotechnology. 33(29). 295601–295601. 5 indexed citations

Lorut, F., G. Audoit, E. Boller, et al.. (2018). 3D high resolution imaging for microelectronics: A multi-technique survey on copper pillars. Ultramicroscopy. 193. 71–83. 5 indexed citations

Valéry, Alexia, E.F. Rauch, L. Clément, & F. Lorut. (2017). Retrieving overlapping crystals information from TEM nano‐beam electron diffraction patterns. Journal of Microscopy. 268(2). 208–218. 23 indexed citations

Valéry, Alexia, Alexandre Pofelski, L. Clément, F. Lorut, & E.F. Rauch. (2016). TEM illumination settings study for optimum spatial resolution and indexing reliability in crystal orientation mappings. Micron. 92. 43–50. 5 indexed citations

Printemps, Tony, et al.. (2015). Correction of absorption-edge artifacts in polychromatic X-ray tomography in a scanning electron microscope for 3D microelectronics. Review of Scientific Instruments. 86(1). 13703–13703. 3 indexed citations

10.

Lorut, F., et al.. (2013). Deep sub micrometer imaging of defects in copper pillars by X-ray tomography in a SEM. Micron. 58. 1–8. 6 indexed citations

11.

Lorut, F., et al.. (2013). Chemical 3D tomography of 28nm high K metal gate transistor: STEM XEDS experimental method and results. Micron. 47. 43–49. 43 indexed citations

12.

Lorut, F., et al.. (2013). 3D Void Imaging in Through Silicon Vias by X-Ray Nanotomography in an SEM. Proceedings - International Symposium for Testing and Failure Analysis. 80224. 7–11. 1 indexed citations

13.

Lorut, F., et al.. (2013). Three-Dimensional Semiconductor Device Investigation Using Focused Ion Beam and Scanning Electron Microscopy Imaging (FIB/SEM Tomography). Microscopy and Microanalysis. 19(1). 85–92. 12 indexed citations

14.

Clément, L., et al.. (2013). Advanced TEM Characterization for the Development of 28-14nm nodes based on fully-depleted Silicon-on-Insulator Technology. Journal of Physics Conference Series. 471. 12026–12026. 8 indexed citations

15.

Lorut, F., et al.. (2013). Modelization of structural changes in ultra low k materials during ultraviolet cure. Journal of Applied Physics. 114(22). 5 indexed citations

16.

Lorut, F., et al.. (2013). Defect analysis of a silicon nanowire transistor by X-ray energy dispersive spectroscopy technique in a STEM: 2D mappings and tomography. Journal of Physics Conference Series. 471. 12027–12027. 2 indexed citations

17.

Hyot, Bérangère, S. Lhostis, F. Mompiou, et al.. (2011). Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications. Applied Physics Letters. 99(24). 243103–243103. 19 indexed citations

18.

Lorut, F. & D. Delille. (2008). 3D STEM Tomography Based Failure Analysis of 45 nm CMOS Devices. Proceedings - International Symposium for Testing and Failure Analysis. 30910. 499–504. 1 indexed citations

19.

Kwakman, L.F.Tz., et al.. (2004). OBIRCH Driven Failure Analysis for Process Development of 120 nm to 65 nm Technology Nodes. Proceedings - International Symposium for Testing and Failure Analysis. 30873. 447–450. 2 indexed citations

20.

Zaccaro, Julien, F. Lorut, & Alain Ibanez. (1999). Crystal growth of a stable nonlinear optical organic material: 2-amino-5-nitropyridinium monohydrogen L-tartrate. Journal of Materials Chemistry. 9(5). 1091–1095. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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