Fabien Deprat

691 total citations
19 papers, 171 citations indexed

About

Fabien Deprat is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Fabien Deprat has authored 19 papers receiving a total of 171 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 5 papers in Computer Networks and Communications and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Fabien Deprat's work include Semiconductor materials and devices (10 papers), 3D IC and TSV technologies (9 papers) and Silicon and Solar Cell Technologies (6 papers). Fabien Deprat is often cited by papers focused on Semiconductor materials and devices (10 papers), 3D IC and TSV technologies (9 papers) and Silicon and Solar Cell Technologies (6 papers). Fabien Deprat collaborates with scholars based in France, Czechia and United States. Fabien Deprat's co-authors include P. Batude, C. Fenouillet-Béranger, M. Vinet, Sébastien Thuries, Olivier Billoint, Laurent Brunet, B. Prévitali, F. Clermidy, O. Rozeau and G. Cibrario and has published in prestigious journals such as Journal of Applied Physics, Journal of Materials Chemistry C and Solid-State Electronics.

In The Last Decade

Fabien Deprat

17 papers receiving 166 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Fabien Deprat France 7 160 26 23 21 19 19 171
Weiran Kong China 10 211 1.3× 37 1.4× 24 1.0× 41 2.0× 21 1.1× 30 239
Gi-Yong Yang South Korea 7 329 2.1× 29 1.1× 32 1.4× 43 2.0× 14 0.7× 19 350
E. S. Jung South Korea 5 162 1.0× 14 0.5× 47 2.0× 16 0.8× 15 0.8× 8 177
Gaspard Hiblot Belgium 10 259 1.6× 25 1.0× 42 1.8× 13 0.6× 8 0.4× 51 291
Meng Duan United Kingdom 15 430 2.7× 17 0.7× 19 0.8× 15 0.7× 4 0.2× 38 444
Paul Hendrickx Belgium 9 220 1.4× 30 1.2× 8 0.3× 13 0.6× 44 2.3× 21 243
Sanghoon Baek South Korea 8 291 1.8× 16 0.6× 9 0.4× 71 3.4× 11 0.6× 12 310
Shivendra Singh Parihar India 7 197 1.2× 25 1.0× 15 0.7× 21 1.0× 8 0.4× 28 220
Patrick Kempf Canada 7 186 1.2× 28 1.1× 19 0.8× 9 0.4× 17 0.9× 16 200
Vincent Huard France 10 464 2.9× 24 0.9× 12 0.5× 35 1.7× 5 0.3× 24 477

Countries citing papers authored by Fabien Deprat

Since Specialization
Citations

This map shows the geographic impact of Fabien Deprat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fabien Deprat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fabien Deprat more than expected).

Fields of papers citing papers by Fabien Deprat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fabien Deprat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fabien Deprat. The network helps show where Fabien Deprat may publish in the future.

Co-authorship network of co-authors of Fabien Deprat

This figure shows the co-authorship network connecting the top 25 collaborators of Fabien Deprat. A scholar is included among the top collaborators of Fabien Deprat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fabien Deprat. Fabien Deprat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Verdier, S., et al.. (2023). Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-ray-photoelectron spectroscopy. Journal of Materials Chemistry C. 11(26). 8935–8941. 2 indexed citations
2.
3.
Deprat, Fabien, et al.. (2022). Substitutional Carbon Incorporation in SiGeC/Si Heterostructures: Influence of Silicon Precursors. ECS Transactions. 109(4). 237–248. 2 indexed citations
4.
Deprat, Fabien, F. Leverd, M. Juhel, et al.. (2022). Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon. Materials Science in Semiconductor Processing. 144. 106549–106549. 2 indexed citations
5.
Dumas, Paul, S. Duguay, Fabien Deprat, et al.. (2021). Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling. Journal of Applied Physics. 129(19). 1 indexed citations
6.
Rodriguez, Philippe, Fabien Deprat, C. Fenouillet-Béranger, et al.. (2018). Phase formation sequence and cobalt behavior in the Ni0.9 Co0.1 system during the thin film solid-state formation. Microelectronic Engineering. 200. 19–25. 3 indexed citations
7.
Fenouillet-Béranger, C., P. Batude, Laurent Brunet, et al.. (2016). Recent advances in 3D VLSI integration. 2. 1–4. 1 indexed citations
8.
Deprat, Fabien, F. Nemouchi, C. Fenouillet-Béranger, et al.. (2016). First integration of Ni0.9Co0.1 on pMOS transistors. 133–135. 4 indexed citations
9.
Thuries, Sébastien, F. Clermidy, P. Batude, et al.. (2016). Impact of intermediate BEOL technology on standard cell performances of 3D VLSI. 218–221. 7 indexed citations
10.
Deprat, Fabien, F. Nemouchi, C. Fenouillet-Béranger, et al.. (2016). Technological enhancers effect on Ni0.9Co0.1 silicide stability for 3D sequential integration. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 13(10-12). 760–765. 3 indexed citations
11.
Rodriguez, Philippe, et al.. (2016). Contacts for monolithic 3D architecture: Study of Ni0.9Co0.1 silicide formation. HAL (Le Centre pour la Communication Scientifique Directe). 72–74. 2 indexed citations
12.
Deprat, Fabien, C. Fenouillet-Béranger, V. Jousseaume, et al.. (2016). Dielectrics stability for intermediate BEOL in 3D sequential integration. Microelectronic Engineering. 167. 90–94. 11 indexed citations
13.
Fenouillet-Béranger, C., B. Prévitali, P. Batude, et al.. (2015). FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. Solid-State Electronics. 113. 2–8. 19 indexed citations
14.
Billoint, Olivier, M. Vinet, P. Batude, et al.. (2015). From 2D to Monolithic 3D. 127–127. 6 indexed citations
15.
Billoint, Olivier, M. Vinet, P. Batude, et al.. (2015). A comprehensive study of monolithic 3D cell on cell design using commercial 2D tool. 1192–1196. 22 indexed citations
16.
Thuries, Sébastien, Olivier Billoint, Fabien Deprat, et al.. (2015). Intermediate BEOL process influence on power and performance for 3DVLSI. TS1.3.1–TS1.3.5. 6 indexed citations
17.
Billoint, Olivier, M. Vinet, P. Batude, et al.. (2015). A Comprehensive Study of Monolithic 3D Cell on Cell Design Using Commercial 2D Tool. Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015. 1192–1196. 13 indexed citations
18.
Fenouillet-Béranger, C., B. Prévitali, P. Batude, et al.. (2014). FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. 110–113. 23 indexed citations
19.
Batude, P., B. Sklénard, C. Fenouillet-Béranger, et al.. (2014). 3D sequential integration opportunities and technology optimization. 373–376. 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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