C. Guedj

1.0k total citations
77 papers, 664 citations indexed

About

C. Guedj is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, C. Guedj has authored 77 papers receiving a total of 664 indexed citations (citations by other indexed papers that have themselves been cited), including 72 papers in Electrical and Electronic Engineering, 29 papers in Electronic, Optical and Magnetic Materials and 19 papers in Materials Chemistry. Recurrent topics in C. Guedj's work include Semiconductor materials and devices (51 papers), Copper Interconnects and Reliability (29 papers) and Semiconductor materials and interfaces (12 papers). C. Guedj is often cited by papers focused on Semiconductor materials and devices (51 papers), Copper Interconnects and Reliability (29 papers) and Semiconductor materials and interfaces (12 papers). C. Guedj collaborates with scholars based in France, Switzerland and United States. C. Guedj's co-authors include J. Kolodzey, E. Martínez, A. Hairie, V. Jousseaume, M. W. Dashiell, P. Calka, G. Audoit, Christophe Licitra, D. Lafond and D. Bouchier and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. Guedj

70 papers receiving 648 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Guedj France 15 591 210 177 132 59 77 664
Emmanuel Nolot France 15 443 0.7× 413 2.0× 79 0.4× 68 0.5× 87 1.5× 69 697
L. Manchanda United States 15 828 1.4× 370 1.8× 150 0.8× 146 1.1× 37 0.6× 31 912
C. J. Hitzman United States 9 503 0.9× 140 0.7× 242 1.4× 50 0.4× 112 1.9× 22 607
W. M. Tong United States 8 347 0.6× 121 0.6× 122 0.7× 89 0.7× 198 3.4× 10 584
S. Koveshnikov United States 16 916 1.5× 250 1.2× 365 2.1× 42 0.3× 68 1.2× 83 1.0k
Miroslav Kolı́bal Czechia 15 278 0.5× 268 1.3× 101 0.6× 63 0.5× 156 2.6× 50 507
Katsunori Makihara Japan 12 496 0.8× 338 1.6× 219 1.2× 75 0.6× 124 2.1× 130 615
S. X. Jin United States 9 472 0.8× 292 1.4× 280 1.6× 170 1.3× 235 4.0× 10 851
J. J. Bucchignano United States 14 465 0.8× 186 0.9× 312 1.8× 90 0.7× 207 3.5× 35 730
А. В. Медведев Russia 12 299 0.5× 299 1.4× 305 1.7× 35 0.3× 107 1.8× 56 570

Countries citing papers authored by C. Guedj

Since Specialization
Citations

This map shows the geographic impact of C. Guedj's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Guedj with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Guedj more than expected).

Fields of papers citing papers by C. Guedj

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Guedj. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Guedj. The network helps show where C. Guedj may publish in the future.

Co-authorship network of co-authors of C. Guedj

This figure shows the co-authorship network connecting the top 25 collaborators of C. Guedj. A scholar is included among the top collaborators of C. Guedj based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Guedj. C. Guedj is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Martín, F., C. Guedj, Emmanuel Nolot, et al.. (2022). Synthesis of In-Plane Oriented Tin Sulfides by Organosulfur-Mediated Sulfurization of Ultrathin SnO2 Films. Chemistry of Materials. 34(13). 5842–5851. 6 indexed citations
2.
Possémé, N., F. Leverd, Daniel L. Benoit, et al.. (2018). Thin layer etching of low-k SiCO spacer using hydrogen ion implantation followed by hydrofluoric acid. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 36(5). 2 indexed citations
3.
Vianello, Elisa, Daniele Garbin, E. Jalaguier, et al.. (2016). Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3. Solid-State Electronics. 125. 182–188. 16 indexed citations
4.
Hung, Linda, C. Guedj, Nicolas Bernier, et al.. (2016). Interpretation of monoclinic hafnia valence electron energy-loss spectra by time-dependent density functional theory. Physical review. B.. 93(16). 13 indexed citations
5.
Calka, P., E. Martínez, V. Delaye, et al.. (2013). Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures. Nanotechnology. 24(8). 85706–85706. 68 indexed citations
6.
Guedj, C., et al.. (2007). Modification of porous ultra-low K dielectric by electron-beam curing. Microelectronics Reliability. 47(4-5). 764–768. 6 indexed citations
7.
Arnal, V., L.G. Gosset, W.F.A. Besling, et al.. (2006). Challenges for Interconnect of Future CMOS Generations : Implementation of Emerging Processes and Alternative Architectures. ECS Meeting Abstracts. MA2005-01(15). 706–706. 1 indexed citations
8.
Guedj, C., V. Arnal, R. Daamen, et al.. (2006). Spectral photoresponse of advanced interconnects: a possible solution to the ITRS most difficult characterization challenges. 45. 207–209. 1 indexed citations
9.
Jousseaume, V., M. Fayolle, C. Guedj, et al.. (2005). Pore Sealing of a Porous Dielectric by Using a Thin PECVD a-SiC:H Conformal Liner. Journal of The Electrochemical Society. 152(10). F156–F156. 17 indexed citations
10.
Guedj, C., V. Arnal, L. Arnaud, et al.. (2005). Bias-stress-induced evolution of the dielectric properties of porous-ULK/ copper advanced interconnects. Microelectronic Engineering. 80. 345–348. 5 indexed citations
11.
Guedj, C., V. Arnal, L. Arnaud, et al.. (2005). Influence of the diffusion barriers on the dielectric reliability of ULK/Cu advanced interconnects. 57–59. 2 indexed citations
12.
Dashiell, M. W., S.L. Rommel, Thomas Adam, et al.. (2000). Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing. IEEE Transactions on Electron Devices. 47(9). 1707–1714. 48 indexed citations
13.
Guedj, C., J. Kolodzey, & A. Hairie. (1999). Structure and lattice dynamics ofGe1−yCyalloys using anharmonic Keating modeling. Physical review. B, Condensed matter. 60(22). 15150–15153. 8 indexed citations
14.
Guedj, C., et al.. (1999). Electrical and optical properties of Ge–implanted 4H–SiC. Applied Physics Letters. 74(4). 540–542. 29 indexed citations
15.
Boulmer, J., C. Guedj, & D. Débarre. (1997). Incorporation of substitutional carbon in Si and SiGe by laser processing in methane and propylene. Thin Solid Films. 294(1-2). 137–140. 3 indexed citations
16.
Vinh, Le Thanh, et al.. (1997). UHV-CVD heteroepitaxial growth of Si1−xGex alloys on Si(100) using silane and germane. Thin Solid Films. 294(1-2). 59–63. 17 indexed citations
17.
Guedj, C., X. Portier, A. Hairie, et al.. (1997). Carbon and germanium distributions in Si1−x−yGexCy layers epitaxially grown on Si(001) by RTCVD. Thin Solid Films. 294(1-2). 129–132. 14 indexed citations
18.
Guedj, C., J. Boulmer, D. Bouchier, et al.. (1996). Bulk and surface structural properties of Si1−x−yGexCy layers processed on Si(001) by pulsed laser induced epitaxy. Applied Surface Science. 102. 28–32. 2 indexed citations
19.
Boulmer, J., P. Boucaud, C. Guedj, et al.. (1995). Realization of heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100). Journal of Crystal Growth. 157(1-4). 436–441. 21 indexed citations
20.
Boucaud, P., C. Guedj, D. Bouchier, et al.. (1995). Optical properties of bulk and multi-quantum well SiGe: C heterostructures. Journal of Crystal Growth. 157(1-4). 410–413. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026