W. Kissinger

521 total citations
33 papers, 430 citations indexed

About

W. Kissinger is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, W. Kissinger has authored 33 papers receiving a total of 430 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in W. Kissinger's work include Chalcogenide Semiconductor Thin Films (14 papers), Semiconductor materials and interfaces (10 papers) and Silicon Nanostructures and Photoluminescence (10 papers). W. Kissinger is often cited by papers focused on Chalcogenide Semiconductor Thin Films (14 papers), Semiconductor materials and interfaces (10 papers) and Silicon Nanostructures and Photoluminescence (10 papers). W. Kissinger collaborates with scholars based in Germany, United Kingdom and Switzerland. W. Kissinger's co-authors include G. Kissinger, H. Neumann, V. Riede, H. Sobotta, R. D. Tomlinson, H. J. Osten, G. Kühn, F. Lévy, B. Dietrich and E. Bugiel and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. Kissinger

30 papers receiving 415 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Kissinger Germany 13 369 264 139 72 36 33 430
Takeshi Miyauchi Japan 11 329 0.9× 290 1.1× 199 1.4× 38 0.5× 54 1.5× 34 430
Yury Kuzminykh Switzerland 12 262 0.7× 224 0.8× 70 0.5× 38 0.5× 32 0.9× 30 347
E. Terzini Italy 8 418 1.1× 294 1.1× 101 0.7× 64 0.9× 14 0.4× 26 472
V. Kh. Kudoyarova Russia 12 394 1.1× 484 1.8× 102 0.7× 87 1.2× 48 1.3× 57 541
Insook Yi Japan 11 241 0.7× 152 0.6× 229 1.6× 191 2.7× 43 1.2× 22 431
Th.W Matthes Germany 11 326 0.9× 258 1.0× 320 2.3× 124 1.7× 14 0.4× 14 510
W. W. Grannemann United States 11 297 0.8× 233 0.9× 101 0.7× 65 0.9× 41 1.1× 33 416
Yoshihiro Todokoro Japan 11 451 1.2× 209 0.8× 130 0.9× 76 1.1× 29 0.8× 39 493
D.N. Kouvatsos Greece 12 551 1.5× 370 1.4× 74 0.5× 153 2.1× 43 1.2× 69 625
Q. Huang China 11 171 0.5× 160 0.6× 133 1.0× 43 0.6× 42 1.2× 36 331

Countries citing papers authored by W. Kissinger

Since Specialization
Citations

This map shows the geographic impact of W. Kissinger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Kissinger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Kissinger more than expected).

Fields of papers citing papers by W. Kissinger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Kissinger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Kissinger. The network helps show where W. Kissinger may publish in the future.

Co-authorship network of co-authors of W. Kissinger

This figure shows the co-authorship network connecting the top 25 collaborators of W. Kissinger. A scholar is included among the top collaborators of W. Kissinger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Kissinger. W. Kissinger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nilsson, S., B. Dietrich, W. Kissinger, et al.. (1996). Residual strain in Si-Si1−xGex quantum dots. Solid-State Electronics. 40(1-8). 383–386. 1 indexed citations
2.
Tang, Y. S., S. Nilsson, B. Dietrich, et al.. (1996). Elastic strain and enhanced light emission in dry etched Si/Si1-xGex quantum dots. Journal of Electronic Materials. 25(2). 287–291. 9 indexed citations
3.
Tang, Y. S., et al.. (1995). Raman spectroscopy of dry etched SiSi1−xGex quantum dots. Solid State Communications. 94(5). 369–372. 12 indexed citations
4.
Kissinger, W., et al.. (1994). Optical transitions in strained Si1−yCy layers on Si(001). Applied Physics Letters. 65(26). 3356–3358. 32 indexed citations
5.
Kissinger, W., H. J. Osten, G. Lippert, B. Dietrich, & E. Bugiel. (1994). Dependence of the interface sharpness of a Ge single quantum well on molecular-beam-epitaxial growth conditions. Journal of Applied Physics. 76(12). 8042–8047. 3 indexed citations
6.
Osten, H. J., E. Bugiel, B. Dietrich, & W. Kissinger. (1994). Impurity-mediated growth and characterization of thin pseudomorphic germanium layers in silicon. Applied Physics Letters. 64(13). 1723–1725. 5 indexed citations
7.
Kissinger, G. & W. Kissinger. (1993). Void-free silicon-wafer-bond strengthening in the 200–400 °C range. Sensors and Actuators A Physical. 36(2). 149–156. 55 indexed citations
8.
Kissinger, W., et al.. (1991). High yield in wafer bonding with surface structured wafers. Materials Letters. 12(4). 266–269. 1 indexed citations
9.
Kissinger, G., et al.. (1991). SOI by Silicon Wafer Direct Bonding - Problems of Wafer Warpage and Surface Chemistry. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 19-20. 625–630. 5 indexed citations
10.
Kissinger, G., W. Kissinger, & K. Tittelbach‐Helmrich. (1991). Creation of Very Deep Denuded Zones for Defect Engineering in a High-Voltage Substrate Technology. physica status solidi (a). 126(2). 325–333. 1 indexed citations
11.
Kissinger, G., W. Kissinger, & M. Neubert. (1991). Deposition of Thick Polysilicon Layers on Stress–reduced Silicon Wafers. Crystal Research and Technology. 26(4). 1 indexed citations
12.
Neumann, H., W. Kissinger, F. Lévy, H. Sobotta, & V. Riede. (1990). Infrared reflectivity of ZnIn2Te4. Crystal Research and Technology. 25(7). 841–845. 7 indexed citations
13.
Neumann, H., W. Kissinger, F. Lévy, H. Sobotta, & V. Riede. (1989). Electrical and infrared optical properties of CdIn2S4 single crystals grown by chemical transport. Crystal Research and Technology. 24(11). 1165–1169. 2 indexed citations
14.
Neumann, H., W. Kissinger, & F. Lévy. (1989). Infrared reflectivity study of ZnIn2Se4. Crystal Research and Technology. 24(6). 5 indexed citations
15.
Neumann, H., et al.. (1987). Optical properties of iron-doped CuInTe2. Materials Letters. 5(3). 63–66. 5 indexed citations
16.
Neumann, H., W. Kissinger, & R. D. Tomlinson. (1986). Intervalence-band absorption spectra and hole effective masses in CuGaTe2. Materials Letters. 4(2). 57–60. 10 indexed citations
17.
Neumann, H., W. Kissinger, Falah S. Hasoon, et al.. (1985). Infrared Reflectivity Spectra of CuSi2P3. physica status solidi (b). 127(1). 7 indexed citations
18.
Riede, V., et al.. (1984). Infrared Study of Lattice and Free Carrier Effects in p‐Type CuGe2P3. physica status solidi (b). 123(2). 12 indexed citations
19.
Neumann, H., W. Kissinger, H. Sobotta, V. Riede, & G. Kühn. (1981). Hole Effective Masses in CuInSe2. physica status solidi (b). 108(2). 483–487. 45 indexed citations
20.
Sobotta, H., H. Neumann, W. Kissinger, G. Kühn, & V. Riede. (1981). Two‐Phonon Absorption Spectra in CuInSe2. physica status solidi (b). 103(2). 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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