B. J. O’Sullivan

779 total citations
22 papers, 660 citations indexed

About

B. J. O’Sullivan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. J. O’Sullivan has authored 22 papers receiving a total of 660 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. J. O’Sullivan's work include Semiconductor materials and devices (20 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). B. J. O’Sullivan is often cited by papers focused on Semiconductor materials and devices (20 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). B. J. O’Sullivan collaborates with scholars based in Belgium, Ireland and France. B. J. O’Sullivan's co-authors include Paul K. Hurley, G. Groeseneken, J.P. Sénateur, B. Kaczer, Tibor Grasser, Ian W. Boyd, Jean-Marc Roussel, P.V. Kelly, J. Martín-Martínez and Junying Zhang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

B. J. O’Sullivan

22 papers receiving 642 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. J. O’Sullivan Belgium 11 543 233 85 77 36 22 660
S.S. Kulkarni United States 12 320 0.6× 363 1.6× 64 0.8× 69 0.9× 29 0.8× 29 444
Fabrice Emieux France 13 360 0.7× 346 1.5× 111 1.3× 61 0.8× 62 1.7× 27 505
D. Sreekantha Reddy India 14 307 0.6× 387 1.7× 60 0.7× 49 0.6× 25 0.7× 36 453
Saeid Rafizadeh Germany 5 349 0.6× 234 1.0× 95 1.1× 85 1.1× 14 0.4× 11 394
Hyeongsu Choi South Korea 14 343 0.6× 372 1.6× 68 0.8× 42 0.5× 45 1.3× 23 459
M.M. Kamble India 12 277 0.5× 323 1.4× 91 1.1× 34 0.4× 62 1.7× 25 458
S Kitova Bulgaria 10 213 0.4× 184 0.8× 99 1.2× 35 0.5× 64 1.8× 25 374
Naomi Kumano Japan 9 229 0.4× 80 0.3× 108 1.3× 98 1.3× 33 0.9× 18 356
G. Razzini Italy 13 236 0.4× 287 1.2× 103 1.2× 57 0.7× 26 0.7× 42 400
V. S. Waman India 8 217 0.4× 251 1.1× 53 0.6× 29 0.4× 56 1.6× 19 350

Countries citing papers authored by B. J. O’Sullivan

Since Specialization
Citations

This map shows the geographic impact of B. J. O’Sullivan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. J. O’Sullivan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. J. O’Sullivan more than expected).

Fields of papers citing papers by B. J. O’Sullivan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. J. O’Sullivan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. J. O’Sullivan. The network helps show where B. J. O’Sullivan may publish in the future.

Co-authorship network of co-authors of B. J. O’Sullivan

This figure shows the co-authorship network connecting the top 25 collaborators of B. J. O’Sullivan. A scholar is included among the top collaborators of B. J. O’Sullivan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. J. O’Sullivan. B. J. O’Sullivan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
O’Sullivan, B. J., et al.. (2022). Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4. Solid-State Electronics. 194. 108388–108388. 5 indexed citations
2.
Clima, Sergiu, B. J. O’Sullivan, N. Ronchi, et al.. (2020). Ferroelectric Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants. 4.2.1–4.2.4. 10 indexed citations
3.
Higashi, Y., Luca Piazza, Masato Suzuki, et al.. (2019). Impact of Charge trapping on Imprint and its Recovery in HfO 2 based FeFET. IEEE Conference Proceedings. 2019. 1–15. 12 indexed citations
4.
Kaczer, B., J. Franco, Stanislav Tyaginov, et al.. (2016). Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 35(1). 9 indexed citations
5.
O’Sullivan, B. J., et al.. (2014). Process-Induced Degradation of SiO<inline-formula><tex-math>$_{\bf 2}$</tex-math></inline-formula> and a-Si:H Passivation Layers for Photovoltaic Applications. IEEE Journal of Photovoltaics. 4(5). 1197–1203. 6 indexed citations
6.
O’Sullivan, B. J., et al.. (2010). On the choice of the test structure for the electrical characterization of dielectrics for silicon solar cells. physica status solidi (RRL) - Rapid Research Letters. 4(12). 362–364. 4 indexed citations
7.
Kaczer, B., Tibor Grasser, Jean-Marc Roussel, et al.. (2008). Ubiquitous relaxation in BTI stressing—New evaluation and insights. 20–27. 204 indexed citations
8.
Kittl, J. A., B. J. O’Sullivan, V. Kaushik, et al.. (2007). Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications. Applied Physics Letters. 90(3). 8 indexed citations
9.
Pantisano, L., T. Schram, B. J. O’Sullivan, et al.. (2006). Effective work function modulation by controlled dielectric monolayer deposition. Applied Physics Letters. 89(11). 20 indexed citations
10.
Dubourdieu, C., Hervé Roussel, Carmen Jiménez, et al.. (2005). Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies. Materials Science and Engineering B. 118(1-3). 105–111. 26 indexed citations
11.
Hurley, Paul K., B. J. O’Sullivan, V. V. Afanas’ev, & A. Stesmans. (2005). Interface States and P[sub b] Defects at the Si(100)/HfO[sub 2] Interface. Electrochemical and Solid-State Letters. 8(2). G44–G44. 24 indexed citations
12.
O’Sullivan, B. J., Paul K. Hurley, Eileen O’Connor, et al.. (2004). Electrical Evaluation of Defects at the Si(100)/HfO[sub 2] Interface. Journal of The Electrochemical Society. 151(8). G493–G493. 17 indexed citations
13.
Modreanu, M., Paul K. Hurley, B. J. O’Sullivan, et al.. (2003). Optical characterization of high-k dielectrics HfO 2 thin films obtained by MOCVD. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4876. 1236–1236. 10 indexed citations
14.
Hurley, Paul K., A. Stesmans, V. V. Afanas’ev, B. J. O’Sullivan, & E. O’Callaghan. (2003). Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing. Journal of Applied Physics. 93(7). 3971–3973. 25 indexed citations
15.
Hurley, Paul K., B. J. O’Sullivan, F.N. Cubaynes, et al.. (2002). Examination of the Si(111)-SiO[sub 2], Si(110)-SiO[sub 2], and Si(100)-SiO[sub 2] Interfacial Properties Following Rapid Thermal Annealing. Journal of The Electrochemical Society. 149(3). G194–G194. 32 indexed citations
16.
Zhang, Junying, Ian W. Boyd, B. J. O’Sullivan, et al.. (2002). Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy. Journal of Non-Crystalline Solids. 303(1). 134–138. 171 indexed citations
17.
O’Sullivan, B. J., Eileen O’Connor, Paul K. Hurley, et al.. (2001). Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD. Journal de Physique IV (Proceedings). 11(PR11). Pr11–261. 1 indexed citations
18.
O’Sullivan, B. J., et al.. (2001). Si (100)– SiO 2 interface properties following rapid thermal processing. Journal of Applied Physics. 89(7). 3811–3820. 59 indexed citations
19.
Zhang, Jinyu, Ian W. Boyd, M.B. Mooney, et al.. (1999). Photo-Induced CVD of Tantalum Pentoxide Dielectric Films Using an Injection Liquid Source. MRS Proceedings. 567. 6 indexed citations
20.
Mooney, M.B., Paul K. Hurley, B. J. O’Sullivan, et al.. (1999). Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source. Microelectronic Engineering. 48(1-4). 283–286. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by S.S. Kulkarni Breakdown of academic impact, for papers by Fabrice Emieux Breakdown of academic impact, for papers by D. Sreekantha Reddy Breakdown of academic impact, for papers by Saeid Rafizadeh Breakdown of academic impact, for papers by Hyeongsu Choi Breakdown of academic impact, for papers by M.M. Kamble Breakdown of academic impact, for papers by S Kitova Breakdown of academic impact, for papers by Naomi Kumano Breakdown of academic impact, for papers by G. Razzini Breakdown of academic impact, for papers by V. S. Waman
Rankless by CCL
2026