Shaoying Ke

556 total citations
70 papers, 396 citations indexed

About

Shaoying Ke is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Shaoying Ke has authored 70 papers receiving a total of 396 indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 31 papers in Atomic and Molecular Physics, and Optics and 18 papers in Materials Chemistry. Recurrent topics in Shaoying Ke's work include Photonic and Optical Devices (35 papers), Thin-Film Transistor Technologies (23 papers) and Semiconductor materials and interfaces (18 papers). Shaoying Ke is often cited by papers focused on Photonic and Optical Devices (35 papers), Thin-Film Transistor Technologies (23 papers) and Semiconductor materials and interfaces (18 papers). Shaoying Ke collaborates with scholars based in China, Australia and Taiwan. Shaoying Ke's co-authors include Songyan Chen, Zuowan Zhou, Cheng Li, Wei Huang, Chong Wang, Dongke Li, Yujie Ye, Jianfang Xu, Jianyuan Wang and Zhiwei Huang and has published in prestigious journals such as Applied Physics Letters, Advanced Functional Materials and ACS Applied Materials & Interfaces.

In The Last Decade

Shaoying Ke

59 papers receiving 376 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shaoying Ke China 11 303 157 121 71 34 70 396
Jiale Su China 11 276 0.9× 98 0.6× 106 0.9× 131 1.8× 24 0.7× 34 353
Yan Zuo China 11 188 0.6× 215 1.4× 55 0.5× 47 0.7× 12 0.4× 33 361
Dian Lei Singapore 16 702 2.3× 179 1.1× 261 2.2× 201 2.8× 15 0.4× 39 799
S. Mohammad Nejad Iran 6 224 0.7× 245 1.6× 45 0.4× 84 1.2× 18 0.5× 15 420
Bin Lu China 11 290 1.0× 69 0.4× 63 0.5× 79 1.1× 10 0.3× 51 359
E. García-Hemme Spain 14 695 2.3× 482 3.1× 250 2.1× 109 1.5× 9 0.3× 49 751
T. Çolakoğlu Türkiye 11 309 1.0× 251 1.6× 132 1.1× 99 1.4× 7 0.2× 22 390
M. Verdú Spain 12 254 0.8× 202 1.3× 63 0.5× 38 0.5× 3 0.1× 26 344
Aurore J. Said United States 5 302 1.0× 231 1.5× 160 1.3× 81 1.1× 4 0.1× 6 393
Mei-Li Hsieh Taiwan 10 221 0.7× 101 0.6× 210 1.7× 111 1.6× 4 0.1× 34 410

Countries citing papers authored by Shaoying Ke

Since Specialization
Citations

This map shows the geographic impact of Shaoying Ke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shaoying Ke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shaoying Ke more than expected).

Fields of papers citing papers by Shaoying Ke

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shaoying Ke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shaoying Ke. The network helps show where Shaoying Ke may publish in the future.

Co-authorship network of co-authors of Shaoying Ke

This figure shows the co-authorship network connecting the top 25 collaborators of Shaoying Ke. A scholar is included among the top collaborators of Shaoying Ke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shaoying Ke. Shaoying Ke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Junfeng, et al.. (2025). Magnetron sputtering growth and growth mechanism of GeSn films with Sn content exceeding 25% on InP substrates. Applied Surface Science. 699. 163122–163122.
2.
Jiang, Xiaolong, et al.. (2025). High-Gain Ge/Si Avalanche Photodetector With Stable Operation Temperature Up to 500 K. IEEE Electron Device Letters. 46(6). 908–911.
3.
Meng, Wenhao, et al.. (2025). InGaAs/Si Avalanche Photodiode With High Gain and Low Dark Current Achieved by Two-Step Wafer Bonding. IEEE Transactions on Electron Devices. 72(6). 3043–3049.
4.
Liu, Bin, Yiliang Chen, Meili Ge, et al.. (2025). Quantum-Confined 0D/2D/3D Heterostructure Photodetectors with an Ultrafast Self-Powered Broadband Response for Short-Wave Infrared Imaging. ACS Applied Materials & Interfaces. 17(34). 48453–48464.
5.
Ke, Shaoying, Dongsheng Peng, Yujuan Wu, et al.. (2024). Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing. Applied Surface Science. 657. 159707–159707. 4 indexed citations
6.
Ke, Shaoying, et al.. (2024). Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product. Physica Scripta. 99(11). 115501–115501. 1 indexed citations
7.
Ye, Shuming, Shuailong Zhang, Dongsheng Peng, et al.. (2024). Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices. ACS Applied Nano Materials. 7(14). 16542–16552. 1 indexed citations
8.
Yang, Jie, et al.. (2024). Microstructure and room temperature ferromagnetism of double-layered MnxGe1−xTe polycrystalline modified by the space-layer thickness. Applied Surface Science. 657. 159837–159837. 1 indexed citations
9.
Li, Jiahui, Wenhao Meng, Xiaolong Jiang, et al.. (2024). Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer. Optics Express. 32(27). 48858–48858. 2 indexed citations
10.
Chen, Shaopeng, Shaoying Ke, Tian Ji, et al.. (2024). High-Speed Self-Powered PdSe2/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe2 Quantum Island Structure. ACS Applied Materials & Interfaces. 16(32). 42577–42587. 11 indexed citations
11.
Wang, Jie, et al.. (2023). High-gain bandwidth product of wafer-bonded near-infrared III-V/silicon APD using polycrystalline silicon bonding layer. Physica Scripta. 98(12). 125527–125527. 2 indexed citations
12.
Li, Jiahui, et al.. (2023). High-quality Ge/Si hetero-bonding by sputtered microcrystalline Ge interlayer. Vacuum. 214. 112203–112203. 4 indexed citations
13.
Ke, Shaoying, et al.. (2022). Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer. IEEE Transactions on Electron Devices. 69(3). 1123–1128. 10 indexed citations
14.
Chen, Xiaoqiang, et al.. (2021). Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process. Vacuum. 196. 110735–110735. 3 indexed citations
15.
Zhang, Ziqi, Shaoying Ke, Wei Huang, et al.. (2021). Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding. Journal of Materials Science Materials in Electronics. 32(8). 10835–10842. 2 indexed citations
16.
Ke, Shaoying, et al.. (2020). Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate. Semiconductor Science and Technology. 35(3). 35012–35012. 1 indexed citations
17.
Lin, Guangyang, Shaoying Ke, Songyan Chen, et al.. (2019). Spin-on doping of phosphorus on Ge with a 9 nm amorphous Si capping layer to achieve n +/ p   shallow junctions through rapid thermal annealing. Journal of Physics D Applied Physics. 52(19). 195101–195101. 2 indexed citations
18.
Ke, Shaoying, et al.. (2018). Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding. Journal of Physics D Applied Physics. 51(26). 265306–265306. 10 indexed citations
19.
Ke, Shaoying, Yujie Ye, Xiaoying Zhang, et al.. (2018). Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device. Journal of Materials Science. 54(3). 2406–2416. 9 indexed citations
20.
Ke, Shaoying, et al.. (2017). Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode. IEEE Transactions on Electron Devices. 64(6). 2556–2563. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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