Yihwan Kim

960 total citations
47 papers, 741 citations indexed

About

Yihwan Kim is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Yihwan Kim has authored 47 papers receiving a total of 741 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in Yihwan Kim's work include Semiconductor materials and devices (19 papers), Semiconductor materials and interfaces (17 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). Yihwan Kim is often cited by papers focused on Semiconductor materials and devices (19 papers), Semiconductor materials and interfaces (17 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). Yihwan Kim collaborates with scholars based in United States, Germany and South Korea. Yihwan Kim's co-authors include Yi‐Chiau Huang, Errol Sanchez, Suyog Gupta, Krishna C. Saraswat, Robert Chen, InSong Koh, James S. Harris, T. I. Kamins, Zhiyuan Ye and Mina Rho and has published in prestigious journals such as Nano Letters, Applied Physics Letters and PLoS ONE.

In The Last Decade

Yihwan Kim

46 papers receiving 722 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Yihwan Kim United States	15	573	232	176	106	75	47	741
Katherine Aidala United States	13	222 0.4×	303 1.3×	77 0.4×	197 1.9×	105 1.4×	29	584
T. Uchino Japan	16	327 0.6×	180 0.8×	237 1.3×	140 1.3×	13 0.2×	72	814
Yeqing Lu United States	16	647 1.1×	64 0.3×	224 1.3×	45 0.4×	34 0.5×	33	827
И. А. Андреев Russia	12	215 0.4×	200 0.9×	70 0.4×	69 0.7×	57 0.8×	65	603
P. Rugheimer United States	10	274 0.5×	317 1.4×	149 0.8×	121 1.1×	30 0.4×	23	515
V. Baier Germany	9	224 0.4×	100 0.4×	308 1.8×	159 1.5×	62 0.8×	13	639
Wook‐Jae Lee South Korea	15	455 0.8×	349 1.5×	415 2.4×	89 0.8×	8 0.1×	47	652
Hiroshi Kamata Japan	13	176 0.3×	451 1.9×	65 0.4×	131 1.2×	49 0.7×	43	647
E. T-S. Pan United States	9	247 0.4×	117 0.5×	139 0.8×	139 1.3×	81 1.1×	18	432
Yanyan Zhi China	12	540 0.9×	457 2.0×	178 1.0×	92 0.9×	50 0.7×	34	727

Countries citing papers authored by Yihwan Kim

Since Specialization

Citations

This map shows the geographic impact of Yihwan Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yihwan Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yihwan Kim more than expected).

Fields of papers citing papers by Yihwan Kim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yihwan Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yihwan Kim. The network helps show where Yihwan Kim may publish in the future.

Co-authorship network of co-authors of Yihwan Kim

This figure shows the co-authorship network connecting the top 25 collaborators of Yihwan Kim. A scholar is included among the top collaborators of Yihwan Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yihwan Kim. Yihwan Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lee, Sung-Ho, Jin‐Yong Kim, Taejin Park, et al.. (2018). Lamellar-structured Ni-silicide film formed by eutectic solidification. Journal of Alloys and Compounds. 771. 124–130. 1 indexed citations

Lee, Hyangsook, Jung-Hwa Kim, Ilgyou Shin, et al.. (2018). Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si(001). Microelectronic Engineering. 205. 14–19.

Kim, Yihwan, et al.. (2017). Pan-genome analysis of Bacillus for microbiome profiling. Scientific Reports. 7(1). 10984–10984. 40 indexed citations

Chen, Robert, Suyog Gupta, Yi‐Chiau Huang, et al.. (2016). Dry-wet digital etching of Ge1−xSnx. Applied Physics Letters. 108(6). 13 indexed citations

Kim, Yihwan, InSong Koh, & Mina Rho. (2014). Deciphering the human microbiome using next-generation sequencing data and bioinformatics approaches. Methods. 79-80. 52–59. 35 indexed citations

Li, Xuebin, et al.. (2014). Selective Epitaxial Si:P Film for nMOSFET Application: High Phosphorous Concentration and High Tensile Strain. ECS Transactions. 64(6). 959–965. 25 indexed citations

Lin, Jyi-Tsong, Suyog Gupta, Yi‐Chiau Huang, et al.. (2013). Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics. Symposium on VLSI Technology. 4 indexed citations

Xu, Nuo, Byron Ho, Vinh Cao Trần, et al.. (2013). Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications. Symposium on VLSI Technology. 1 indexed citations

Chopra, Saurabh, et al.. (2013). Channel Strain Measurement of Si_1-xC_xStructures: Effects of Gate Length, Source/Drain Length, and Source/Drain Elevation. Applied Physics Express. 6(6). 66601–66601. 4 indexed citations

10.

Nainani, Aneesh, Shashank Gupta, Victor Moroz, et al.. (2012). Is strain engineering scalable in FinFET era?: Teaching the old dog some new tricks. 18.3.1–18.3.4. 28 indexed citations

11.

Alptekin, Emre, et al.. (2009). Properties of ErSi(2−x) Contacts Formed on Si(1−x)C(x) Epitaxial Layers. ECS Transactions. 19(1). 331–338. 1 indexed citations

12.

Alptekin, Emre, et al.. (2009). Erbium Silicide Formation on Si[sub 1−x]C[sub x] Epitaxial Layers. Journal of The Electrochemical Society. 156(5). H378–H378. 5 indexed citations

13.

Kuppurao, Satheesh, et al.. (2008). Integrating Selective Epitaxy in Advanced Logic & Memory Devices. ECS Transactions. 16(10). 415–425. 1 indexed citations

14.

Kim, Yihwan, et al.. (2007). Selective Si:C Epitaxy Growth on Recessed Area and Material Properties Characterizations. ECS Meeting Abstracts. MA2007-01(12). 604–604. 1 indexed citations

15.

Ye, Zhiyuan, et al.. (2007). A study of low energy phosphorus implantation and annealing in Si:C epitaxial films. Semiconductor Science and Technology. 22(2). 171–174. 9 indexed citations

16.

Kim, Yihwan, et al.. (2007). Selective Si:C Epitaxy in Recessed Areas and Characterization of the Material Properties. ECS Transactions. 6(1). 409–417. 2 indexed citations

17.

Kim, Yihwan, et al.. (2006). Impact of Recessed S/D SiGe Integration Parameters on Device Performance. ECS Meeting Abstracts. MA2005-01(14). 682–682. 1 indexed citations

18.

Mertens, S., R. Schreutelkamp, Yihwan Kim, et al.. (2006). Study of Ni-Silicide Contacts to Si:C Source/Drain.. ECS Transactions. 3(2). 139–147. 10 indexed citations

19.

Kim, Yihwan. (2000). Stress and defect control by buffer layers in heteroepitaxial GaN thin films. PhDT. 1 indexed citations

20.

Kim, Yihwan, Sudhir G. Subramanya, H. Siegle, et al.. (2000). GaN thin films by growth on Ga-rich GaN buffer layers. Journal of Applied Physics. 88(10). 6032–6036. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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