H.F.W. Dekkers

824 total citations
31 papers, 601 citations indexed

About

H.F.W. Dekkers is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, H.F.W. Dekkers has authored 31 papers receiving a total of 601 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 5 papers in Mechanics of Materials. Recurrent topics in H.F.W. Dekkers's work include Semiconductor materials and devices (19 papers), Thin-Film Transistor Technologies (19 papers) and Silicon and Solar Cell Technologies (8 papers). H.F.W. Dekkers is often cited by papers focused on Semiconductor materials and devices (19 papers), Thin-Film Transistor Technologies (19 papers) and Silicon and Solar Cell Technologies (8 papers). H.F.W. Dekkers collaborates with scholars based in Belgium, United States and China. H.F.W. Dekkers's co-authors include G. Beaucarne, Wenzhong Shen, L. Carnel, Sven Van Elshocht, M. Hiller, A. Slaoui, Lingling Wu, Lucas Petersen Barbosa Lima, J. G. Lisoni and Stefan De Gendt and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry C.

In The Last Decade

H.F.W. Dekkers

31 papers receiving 588 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H.F.W. Dekkers Belgium 15 563 272 99 66 27 31 601
P. Y. Hung United States 10 519 0.9× 228 0.8× 76 0.8× 58 0.9× 17 0.6× 29 576
Erwann Fourmond France 15 604 1.1× 258 0.9× 199 2.0× 76 1.2× 18 0.7× 39 657
David Trémouilles France 15 580 1.0× 183 0.7× 48 0.5× 43 0.7× 42 1.6× 65 707
H. Rinnert France 10 328 0.6× 272 1.0× 80 0.8× 54 0.8× 10 0.4× 30 398
М. І. Ілащук Ukraine 14 414 0.7× 279 1.0× 181 1.8× 43 0.7× 29 1.1× 50 489
Yury Kuzminykh Switzerland 12 262 0.5× 224 0.8× 70 0.7× 38 0.6× 32 1.2× 30 347
C. Huffman United States 14 502 0.9× 203 0.7× 37 0.4× 66 1.0× 43 1.6× 38 581
Salim El Kazzi Belgium 16 477 0.8× 347 1.3× 163 1.6× 146 2.2× 8 0.3× 45 659
P. Doshi United States 12 445 0.8× 199 0.7× 123 1.2× 88 1.3× 10 0.4× 24 510
G. J. Leusink United States 8 342 0.6× 193 0.7× 60 0.6× 35 0.5× 22 0.8× 18 386

Countries citing papers authored by H.F.W. Dekkers

Since Specialization
Citations

This map shows the geographic impact of H.F.W. Dekkers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.F.W. Dekkers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.F.W. Dekkers more than expected).

Fields of papers citing papers by H.F.W. Dekkers

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.F.W. Dekkers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.F.W. Dekkers. The network helps show where H.F.W. Dekkers may publish in the future.

Co-authorship network of co-authors of H.F.W. Dekkers

This figure shows the co-authorship network connecting the top 25 collaborators of H.F.W. Dekkers. A scholar is included among the top collaborators of H.F.W. Dekkers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.F.W. Dekkers. H.F.W. Dekkers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Setten, Michiel J. van, Adrian Chasin, Daisuke Matsubayashi, et al.. (2025). In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI. ACS Applied Electronic Materials. 7(9). 4210–4219. 2 indexed citations
2.
3.
Belmonte, Attilio, Shreya Kundu, Subhali Subhechha, et al.. (2023). Lowest IOFF < 3×10−21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. 1–2. 20 indexed citations
4.
Setten, Michiel J. van, H.F.W. Dekkers, Devin Verreck, et al.. (2023). The Impact of IGZO Channel Composition on DRAM Transistor Performance. IEEE Transactions on Electron Devices. 70(9). 4674–4679. 8 indexed citations
5.
Setten, Michiel J. van, H.F.W. Dekkers, Adrian Chasin, et al.. (2022). Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search. Materials Advances. 3(23). 8413–8427. 9 indexed citations
6.
Subhechha, Subhali, Nouredine Rassoul, Hubert Hody, et al.. (2022). Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control. 88–88. 1 indexed citations
7.
Chasin, Adrian, J. Franco, H.F.W. Dekkers, et al.. (2021). Understanding and modelling the PBTI reliability of thin-film IGZO transistors. 2021 IEEE International Electron Devices Meeting (IEDM). 31.1.1–31.1.4. 47 indexed citations
8.
Setten, Michiel J. van, H.F.W. Dekkers, Jérôme Mitard, et al.. (2021). Oxygen Defect Stability in Amorphous, C-Axis Aligned, and Spinel IGZO. ACS Applied Electronic Materials. 3(9). 4037–4046. 18 indexed citations
9.
Dekkers, H.F.W., Lars‐Åke Ragnarsson, T. Schram, & Naoto Horiguchi. (2018). Properties of ALD TaxNy films as a barrier to aluminum in work function metal stacks. Journal of Applied Physics. 124(16). 9 indexed citations
10.
Lima, Lucas Petersen Barbosa, H.F.W. Dekkers, J. G. Lisoni, et al.. (2014). Metal gate work function tuning by Al incorporation in TiN. Journal of Applied Physics. 115(7). 63 indexed citations
11.
Dekkers, H.F.W., Lucas Petersen Barbosa Lima, & Sven Van Elshocht. (2013). Conductivity Improvements of Atomic Layer Deposited Ta3N5. ECS Transactions. 58(10). 195–202. 2 indexed citations
12.
Dekkers, H.F.W., A. Gallo, & Sven Van Elshocht. (2013). Infrared molar absorption coefficient of H2O stretching modes in SiO2. Thin Solid Films. 542. 8–13. 6 indexed citations
13.
Dekkers, H.F.W., et al.. (2010). Influence of density on NH bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H. Applied Physics Letters. 96(1). 6 indexed citations
14.
Rohatgi, A., et al.. (2008). Hydrogen diffusion in silicon from PECVD silicon nitride. Conference record of the IEEE Photovoltaic Specialists Conference. 1998. 1–4. 13 indexed citations
15.
Dekkers, H.F.W., L. Carnel, & G. Beaucarne. (2006). Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers. Applied Physics Letters. 89(1). 52 indexed citations
16.
Agostinelli, G., et al.. (2006). Rear Surface Passivation for Industrial Solar Cells on Thin Substrates. 16. 1004–1007. 20 indexed citations
17.
Dekkers, H.F.W., et al.. (2006). Molecular hydrogen formation in hydrogenated silicon nitride. Applied Physics Letters. 89(21). 62 indexed citations
18.
Shen, Wenzhong, et al.. (2006). Optical properties and local bonding configurations of hydrogenated amorphous silicon nitride thin films. Journal of Applied Physics. 100(7). 51 indexed citations
19.
Dekkers, H.F.W., G. Beaucarne, W. Beyer, & L. Carnel. (2005). Diffusion mechanism of hydrogen through PECVD SiNx:H for a fast defect passivation of mc-Si solar cells. JuSER (Forschungszentrum Jülich). 3 indexed citations
20.
Dekkers, H.F.W., Filip Duerinckx, Stefaan De Wolf, G. Agostinelli, & Jozef Szlufcik. (2003). The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride. 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of. 2. 1143–1146. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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