H.F.W. Dekkers

824 citations

31 papers · 601 indexed · h-index 15

Co-authors: G. Beaucarne Wenzhong Shen L. Carnel Sven Van Elshocht A. Slaoui Lingling Wu M. Hiller Stefan De Gendt
Topics: Thin-Film Transistor Technologies (19 papers)Semiconductor materials and devices (19 papers)Silicon and Solar Cell Technologies (8 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics The Journal of Physical Chemistry C
Partner nations: Belgium United States China

In The Last Decade

H.F.W. Dekkers

31 papers receiving 588 citations

Peers

Countries citing papers authored by H.F.W. Dekkers

Since Specialization

Citations

This map shows the geographic impact of H.F.W. Dekkers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.F.W. Dekkers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.F.W. Dekkers more than expected).

Fields of papers citing papers by H.F.W. Dekkers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.F.W. Dekkers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.F.W. Dekkers. The network helps show where H.F.W. Dekkers may publish in the future.

Co-authorship network of co-authors of H.F.W. Dekkers

This figure shows the co-authorship network connecting the top 25 collaborators of H.F.W. Dekkers. A scholar is included among the top collaborators of H.F.W. Dekkers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.F.W. Dekkers. H.F.W. Dekkers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI 2025 ·ACS Applied Electronic Materials ·(unknown),Michiel J. van Setten,Adrian Chasin,Daisuke Matsubayashi,H.F.W. Dekkers,(unknown),(unknown),(unknown),Nouredine Rassoul,(unknown),Yuchao Jiang,Subhali Subhechha,Geoffrey Pourtois,Attilio Belmonte,Gouri Sankar Kar	2
2	Unraveling BTI in IGZO Devices: Impact of Device Architecture, Channel Film Deposition Method and Stoichiometry/Phase, and Device Operating Conditions 2024 ·Adrian Chasin,(unknown),S. Van Beek,H.F.W. Dekkers,(unknown),(unknown),Ying Zhao,Daisuke Matsubayashi,(unknown),Yi Wan,Kishor S. Trivedi,Nouredine Rassoul,Jie Li,Yong Jiang,(unknown),Subhali Subhechha,(unknown),(unknown),Gouri Sankar Kar	2
3	The Impact of IGZO Channel Composition on DRAM Transistor Performance 2023 ·IEEE Transactions on Electron Devices ·(unknown),Michiel J. van Setten,H.F.W. Dekkers,(unknown),Devin Verreck,Quentin Smets,(unknown),Attilio Belmonte,Subhali Subhechha,Adrian Chasin,Romain Delhougne,Gouri Sankar Kar	8
4	Lowest I_OFF < 3×10⁻²¹ A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT 2023 ·Attilio Belmonte,Shreya Kundu,Subhali Subhechha,Adrian Chasin,Nouredine Rassoul,H.F.W. Dekkers,Harinarayanan Puliyalil,F. C. Seidel,Patrick Carolan,Romain Delhougne,Gouri Sankar Kar	20
5	Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search 2022 ·Materials Advances ·Michiel J. van Setten,H.F.W. Dekkers,(unknown),Adrian Chasin,Attilio Belmonte,Romain Delhougne,Gouri Sankar Kar,Geoffrey Pourtois	9
6	Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control 2022 ·Subhali Subhechha,Nouredine Rassoul,(unknown),Hubert Hody,H.F.W. Dekkers,Michiel J. van Setten,(unknown),(unknown),Kaustuv Banerjee,Harinarayanan Puliyalil,Shreya Kundu,Murat Pak,D. Tsvetanova,(unknown),K. Vandersmissen,Dmitry Batuk,J. Geypen,(unknown),Romain Delhougne,Gouri Sankar Kar	1
7	Understanding and modelling the PBTI reliability of thin-film IGZO transistors 2021 ·2021 IEEE International Electron Devices Meeting (IEDM) ·Adrian Chasin,J. Franco,(unknown),H.F.W. Dekkers,Nouredine Rassoul,Attilio Belmonte,Quentin Smets,Subhali Subhechha,(unknown),Michiel J. van Setten,Jérôme Mitard,Romain Delhougne,V. V. Afanas’ev,B. Kaczer,Gouri Sankar Kar	47
8	Oxygen Defect Stability in Amorphous, C-Axis Aligned, and Spinel IGZO 2021 ·ACS Applied Electronic Materials ·Michiel J. van Setten,H.F.W. Dekkers,(unknown),Jérôme Mitard,(unknown),Subhali Subhechha,Nouredine Rassoul,Romain Delhougne,Gouri Sankar Kar,Geoffrey Pourtois	18
9	Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO₂ and SiO₂ 2020 ·The Journal of Physical Chemistry C ·Е. О. Филатова,Aleksei S. Konashuk,(unknown),(unknown),(unknown),Valeri Afanas’ev,H.F.W. Dekkers	21
10	Metal gate work function tuning by Al incorporation in TiN 2014 ·Journal of Applied Physics ·Lucas Petersen Barbosa Lima,H.F.W. Dekkers,J. G. Lisoni,J. A. Diniz,Sven Van Elshocht,Stefan De Gendt	63
11	Infrared molar absorption coefficient of H2O stretching modes in SiO2 2013 ·Thin Solid Films ·H.F.W. Dekkers,A. Gallo,Sven Van Elshocht	6
12	Conductivity Improvements of Atomic Layer Deposited Ta₃N₅ 2013 ·ECS Transactions ·H.F.W. Dekkers,Lucas Petersen Barbosa Lima,Sven Van Elshocht	2
13	Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature 2008 ·Applied Physics Letters ·(unknown),(unknown),A. Rohatgi,H.F.W. Dekkers,G. Beaucarne,Matthew Young,S. E. Asher	37
14	Hydrogen diffusion in silicon from PECVD silicon nitride 2008 ·Conference record of the IEEE Photovoltaic Specialists Conference ·(unknown),(unknown),A. Rohatgi,H.F.W. Dekkers,G. Beaucarne,Matthew Young,S. E. Asher	13
15	Effectiveness of Atomic and Molecular Hydrogen Passivation of a Silicon/Silicon Oxide Interface With a Deposited Oxide 2008 ·EU PVSEC ·(unknown),J. John,Patrick Choulat,Yao Ma,H.F.W. Dekkers,G. Agostinelli,G. Beaucarne	1
16	Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers 2006 ·Applied Physics Letters ·H.F.W. Dekkers,L. Carnel,G. Beaucarne	52
17	Rear Surface Passivation for Industrial Solar Cells on Thin Substrates 2006 ·G. Agostinelli,Patrick Choulat,H.F.W. Dekkers,(unknown),G. Beaucarne	20
18	High temperature line electrode assembly for continuous substrate flow VHF PECVD 2005 ·Thin Solid Films ·(unknown),(unknown),J. Kuske,(unknown),(unknown),(unknown),H.F.W. Dekkers	2
19	Diffusion mechanism of hydrogen through PECVD SiNx:H for a fast defect passivation of mc-Si solar cells 2005 ·JuSER (Forschungszentrum Jülich) ·H.F.W. Dekkers,G. Beaucarne,W. Beyer,L. Carnel	3
20	The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride 2003 ·3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of ·H.F.W. Dekkers,Filip Duerinckx,Stefaan De Wolf,G. Agostinelli,Jozef Szlufcik	3

About H.F.W. Dekkers

H.F.W. Dekkers is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials, having authored 31 papers that have together received 601 indexed citations. Recurring topics across this work include Thin-Film Transistor Technologies (19 papers), Semiconductor materials and devices (19 papers) and Silicon and Solar Cell Technologies (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (563 citations), Materials Chemistry (272 citations) and Atomic and Molecular Physics, and Optics (99 citations). H.F.W. Dekkers has collaborated with scholars based in Belgium, United States and China. Frequent co-authors include G. Beaucarne, Wenzhong Shen, L. Carnel, Sven Van Elshocht, A. Slaoui, Lingling Wu, M. Hiller, Stefan De Gendt, Lucas Petersen Barbosa Lima and J. G. Lisoni. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry C.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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