A. Akheyar

526 citations

28 papers · 318 indexed · h-index 10

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 27
- Semiconductor materials and devices 24
- Silicon and Solar Cell Technologies 8
- Advancements in Semiconductor Devices and Circuit Design 8
- Integrated Circuits and Semiconductor Failure Analysis 7
- Advanced Memory and Neural Computing 5
- Ferroelectric and Negative Capacitance Devices 5
Atomic and Molecular Physics, and Optics 9
- Semiconductor materials and interfaces 9

Co-authors: Karen Maex A. Lauwers J. A. Kittl Mark van Dal Richard Lindsay O. Chamirian M. de Potter T. Schram
Journals: Microelectronic Engineering (2 papers)IEEE Electron Device Letters (2 papers)Applied Physics Letters (2 papers)Solid-State Electronics (1 paper)Sensors and Actuators B Chemical (1 paper)
Partner nations: Belgium United States Singapore

In The Last Decade

A. Akheyar

26 papers receiving 301 citations

Peers

Countries citing papers authored by A. Akheyar

Since Specialization

Citations

This map shows the geographic impact of A. Akheyar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Akheyar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Akheyar more than expected).

Fields of papers citing papers by A. Akheyar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Akheyar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Akheyar. The network helps show where A. Akheyar may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Akheyar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Akheyar Line = papers co-authored together A. Akheyar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Study of nitrogen impact on VFB–EOT roll-off by varying interfacial SiO2 thickness Solid-State Electronics ·Moonju Cho, A. Akheyar, M. Aoulaiche, R. Degraeve, Lars‐Åke Ragnarsson, P Cacciatori, T. Y. Hoffmann, G. Groeseneken	2011	3
2	Positive and negative bias temperature instability in La<inf>2</inf>O<inf>3</inf> and Al<inf>2</inf>O<inf>3</inf> capped high-k MOSFETs M. Aoulaiche, B. Kaczer, Naoaki Sugiura, Michel Houssa, R. Degraeve, T. Kauerauf, A. Akheyar, T. Schram, Ph. Roussel, H.E. Maes, Thomas Hoffmann, S. Biesemans, G. Groeseneken	2009	7
3	Low-frequency Noise Analysis of the Impact of an LaO Cap Layer in HfSiON/Ta₂C Gate Stack nMOSFETs ECS Transactions ·Eddy Simoen, A. Akheyar, E. Röhr, A. Mercha, Cor Claeys	2009	9
4	Electrical Properties of Low-$V_{T}$ Metal-Gated n-MOSFETs Using $\hbox{La}_{2}\hbox{O}_{3}/\hbox{SiO}_{x}$ as Interfacial Layer Between HfLaO High-$\kappa$ Dielectrics and Si Channel IEEE Electron Device Letters ·Odegärd Or, H.Y. Yu, Christoph Adelmann, Annelies Delabie, Ko WC; Yang JC; Wang DJ; Fung TH; Chan LD; Lee HK; Lee SY, Sven Van Elshocht, A. Akheyar, Laura Nyns, Johan Swerts, M. Aoulaiche, C. Kerner, P. Absil, Jailson Almeida Conceição, S. Biesemans	2008	8
5	The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics IEEE Electron Device Letters ·圭吾前畑, H.Y. Yu, Vincent S. Chang, A. Akheyar, S. Jakschik, Thierry Conard, Thomas Hantschel, Annelies Delabie, Christoph Adelmann, Sven Van Elshocht, Lars‐Åke Ragnarsson, T. Schram, P. Absil, S. Biesemans	2008	11
6	Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates Microelectronic Engineering ·Zhe Li, T. Schram, L. Pantisano, T. Witters, A. Stesmans, A. Akheyar, Valeri Afanasiev, Naoki Yamada, Leon A. H. Hogenhuis, Stefan De Gendt, K. De Meyer	2007	1
7	Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface Journal of Applied Physics ·T. Brauers, T. Schram, L. Pantisano, Thierry Conard, Sven Van Elshocht, Xunkang Chen, Stefan De Gendt, K. De Meyer, A. Stesmans, S. Shamuilia, V. V. Afanas’ev, A. Akheyar, D.P. Brunco, Naoki Yamada, P. Lehnen	2007	17
8	Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks Microelectronics Reliability ·芳徳相部, T. Schram, L. Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, Valeri Afanasiev, A. Akheyar, Sven Van Elshocht, D.P. Brunco, Xunkang Chen, Naoki Yoshioka, P. Lehnen, Stefan De Gendt, K. De Meyer	2007	3
9	Optimized ultra-low thermal budget process flow for advanced High-K / Metal gate first CMOS using laser-annealing technology Symposium on VLSI Technology ·C. Ortolland, L.-Å. Ragnarsson, Paola Favia, Olivier Richard, C. Kerner, T. Chiarella, Erik Rosseel, Y. Okuno, A. Akheyar, P Cacciatori, Kye Lim Lee, T. Schram, S. Kubicek, M. Aoulaiche, 2022-09-06, Рощин Виталий Юрьевич, S. Biesemans, Thomas Hoffmann	2006	1
10	Scalable Floating Gate Flash Memory CellWith Engineered Tunnel Dielectric and High-K (Al2O3) Interpoly Dielectric Pieter Blomme, Joeri De Vos, A. Akheyar, Linh My To Toan, Jan Van Houdt, K. De Meyer	2006	9
11	Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients Applied Physics Letters ·L. Pantisano, T. Schram, T. Brauers, J. G. Lisoni, Geoffrey Pourtois, Stefan De Gendt, D.P. Brunco, A. Akheyar, V. V. Afanas’ev, S. Shamuilia, A. Stesmans	2006	42
12	High-k Materials for Tunnel Barrier Engineering in Floating-Gate Flash Memories ECS Transactions ·Pieter Blomme, B. Govoreanu, M. Rosmeulen, A. Akheyar, L. Haspeslagh, Joeri De Vos, M. Lorenzini, Jan Van Houdt, K. De Meyer	2006	5
13	Effects of Alloying on Properties of NiSi for CMOS Applications MRS Proceedings ·Mark van Dal, A. Akheyar, J. A. Kittl, O. Chamirian, М. Жумабаева, C. Demeurisse, A. Lauwers, Karen Maex	2004	2
14	Applications of Ni-based silicides to 45 nm CMOS and Beyond MRS Proceedings ·J. A. Kittl, A. Lauwers, O. Chamirian, Małgorzata Pawlak, Mark van Dal, A. Akheyar, N.S. Desyatov, Anil Kottantharayil, Geoffrey Pourtois, Richard Lindsay, Karen Maex	2004	17
15	Ni-Silicided Deep Source/Drain Junctions Formed by Solid Phase Epitaxial Regrowth MRS Proceedings ·A. Lauwers, Richard Lindsay, K. Henson, S. Severi, A. Akheyar, Bartek Pawlak, N.S. Desyatov, Karen Maex	2004	3
16	Ni-based silicides: material issues for advanced CMOS applications J. A. Kittl, A. Lauwers, O. Chamirian, Mark van Dal, A. Akheyar, Olivier Richard, J. G. Lisoni, N.S. Desyatov, Richard Lindsay, Karen Maex	2003	2
17	Silicide scaling: Co, Ni or CoNi ? A. Lauwers, J. A. Kittl, A. Akheyar, Mark van Dal, O. Chamirian, M. de Potter, Richard Lindsay, Karen Maex	2003	0
18	Silicides for 65nm CMOS and beyond J. A. Kittl, A. Lauwers, O. Chamirian, Mark van Dal, A. Akheyar, Olivier Richard, J. G. Lisoni, Muriel de Potter de ten Broeck, Richard Lindsay, Karen Maex	2003	0
19	<title>Fully CMOS-compatible low-power microheater</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J. Laconte, Kalieva Arıwxan Maqset qızı, A. Akheyar, Jean‐Pierre Raskin, Denis Flandre	2002	6
20	Edge Effects and Tilt Dependency of Heavy Ion Irradiation SEE Characterization In PN junctions Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)) ·Gordon M. Berger, Yaping Huang, Irene Jiménez Martínez, A. Akheyar, Haohao Lin, G. Ryckewaert, Denis Flandre	2002	2

About A. Akheyar

A. Akheyar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Renewable Energy, Sustainability and the Environment, having authored 28 papers that have together received 318 indexed citations. Recurring topics across this work include Semiconductor materials and devices (24 papers), Semiconductor materials and interfaces (9 papers), Silicon and Solar Cell Technologies (8 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Advanced Memory and Neural Computing (5 papers), Ferroelectric and Negative Capacitance Devices (5 papers) and Copper Interconnects and Reliability (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (287 citations), Atomic and Molecular Physics, and Optics (138 citations), Bioengineering (19 citations), Electronic, Optical and Magnetic Materials (30 citations) and Materials Chemistry (74 citations). A. Akheyar has collaborated with scholars based in Belgium, United States and Singapore. Frequent co-authors include Karen Maex, A. Lauwers, J. A. Kittl, Mark van Dal, Richard Lindsay, O. Chamirian, M. de Potter, T. Schram, Stefan De Gendt and Denis Flandre. Their work appears in journals such as Microelectronic Engineering, IEEE Electron Device Letters, Applied Physics Letters, Solid-State Electronics and Sensors and Actuators B Chemical.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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