K.G. Anil

639 citations

35 papers · 460 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Low-power high-performance VLSI design
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 35
- Advancements in Semiconductor Devices and Circuit Design 31
- Semiconductor materials and devices 31
- Integrated Circuits and Semiconductor Failure Analysis 11
- Silicon Carbide Semiconductor Technologies 8
- Ferroelectric and Negative Capacitance Devices 3
- VLSI and FPGA Design Techniques 2
Atomic and Molecular Physics, and Optics 9
- Semiconductor materials and interfaces 9

Co-authors: S. Biesemans Nadine Collaert M. Jurczak A. Veloso K. De Meyer A. Lauwers I. Eisele K. Henson
Journals: IEEE Electron Device Letters (6 papers)Solid-State Electronics (5 papers)Microelectronic Engineering (3 papers)Thin Solid Films (3 papers)Applied Physics Letters (1 paper)
Partner nations: Belgium Germany United States

In The Last Decade

K.G. Anil

35 papers receiving 432 citations

Peers

Countries citing papers authored by K.G. Anil

Since Specialization

Citations

This map shows the geographic impact of K.G. Anil's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.G. Anil with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.G. Anil more than expected).

Fields of papers citing papers by K.G. Anil

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.G. Anil. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.G. Anil. The network helps show where K.G. Anil may publish in the future.

Co-authors

The 25 scholars most cited alongside K.G. Anil, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K.G. Anil Line = papers co-authored together K.G. Anil links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Parameter extraction for PSP MOSFET model using hierarchical particle swarm optimization Engineering Applications of Artificial Intelligence ·Rajesh A. Thakker, Mahesh B. Patil, K.G. Anil	2008	13
2	Parameter extraction for mos model 11 using Particle Swarm Optimization Lucía Amani, Sourabh Khandelwal, Rajesh A. Thakker, Mahesh B. Patil, K.G. Anil	2007	4
3	Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions Solid-State Electronics ·Abhisek Dixit, K.G. Anil, R. Rooyackers, Frederik Leys, M. Kaiser, Nadine Collaert, K. De Meyer, M. Jurczak, S. Biesemans	2006	13
4	Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates Microelectronic Engineering ·J. A. Kittl, Małgorzata Pawlak, A. Lauwers, C. Demeurisse, Thomas Hoffmann, A. Veloso, K.G. Anil, Stefan Kubicek, M. Niwa, M.J.H. van Dal, Olivier Richard, M. Jurczak, C. Vrancken, T. Chiarella, S. Brus, Karen Maex, S. Biesemans	2006	4
5	Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects IEEE Electron Device Letters ·Małgorzata Pawlak, A. Lauwers, Tom Janssens, K.G. Anil, Karl Opsomer, Karen Maex, A. Vantomme, J. A. Kittl	2006	19
6	Work function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETs A. Veloso, K.G. Anil, Van Der Sand, S. Brus, S. Kubicek, Jean‐François de Marneffe, Patricio Canepa Fernández, K. Devriendt, A. Lauwers, T. Kauerauf, M. Jurczak, Mostafa Azizi	2005	13
7	Performance improvement of tall triple gate devices with strained SiN layers IEEE Electron Device Letters ·Nadine Collaert, A. De Keersgieter, K.G. Anil, R. Rooyackers, Geert Eneman, M. W. Goodwin, B. Eyckens, Erik Sleeckx, Jean‐François de Marneffe, K. De Meyer, P. Absil, M. Jurczak, S. Biesemans	2005	42
8	Ni-FUSI on high-k as a candidate for 65nm LSTP CMOS Stefan Kubicek, A. Veloso, K.G. Anil, Shigenori Hayashi, Kazuhiko Yamamoto, Pierre I. Karakiewicz, J. A. Kittl, A. Lauwers, Min Dai, Lauren Owens, Yoshihisa Harada, Masafumi Kubota, M. Niwa, Stefan De Gendt, Marc Heyns, M. Jurczak, S. Biesemans	2005	1
9	Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices G. Sanschagrin, K.G. Anil, 高樹大久保, Ray Duffy, K. Henson, Richard Lindsay, A. Lauwers, A. Veloso, J.F. de Mameffea, J. Ramos, Gabriela Latour, Pierre Eyben, C. Dachs, К И Липчиу, M. Jurczak, S. Biesemans, A Kanagalakshmi	2005	13
10	Minimization of the muGFET contact resistance by integration of nisi contacts on epitaxially raised source/drain regions Abhisek Dixit, K.G. Anil, R. Rooyackers, Frederik Leys, M. Kaiser, R.G.R. Weemaes, Isabelle Ferain, A. De Keersgieter, Nadine Collaert, R. Surdeanu, M. W. Goodwin, Paul Zimmerman, Roger Loo, Matty Caymax, M. Jurczak, S. Biesemans, K. De Meyer	2005	7
11	Scalability of Ni FUSI gate processes: phase and Vt control to 30 nm gate lenghts J. A. Kittl, A. Veloso, Yoshihide Miyawaki, K.G. Anil, C. Demeurisse, S. Kubicek, M. Niwa, M.J.H. van Dal, Olivier Richard, Małgorzata Pawlak, M. Jurczak, C. Vrancken, 昭彦齋藤, S. Brus, Karen Maex, Sheema Khan	2005	21
12	Ni fully silicided gates for 45nm CMOS applications Microelectronic Engineering ·J. A. Kittl, A. Lauwers, Małgorzata Pawlak, M.J.H. van Dal, A. Veloso, K.G. Anil, Geoffrey Pourtois, C. Demeurisse, T. Schram, Bert Brijs, N.S. Desyatov, C. Vrancken, Karen Maex	2005	24
13	Demonstration of fully Ni-silicided metal gates on HfO/sub 2/ based high-k gate dielectrics as a candidate for low power applications K.G. Anil, A. Veloso, Stefan Kubicek, T. Schram, E. Augendre, Jean‐François de Marneffe, K. Devriendt, A. Lauwers, S. Brus, K. Henson, S. Biesemans	2004	30
14	Layout density analysis of FinFETs K.G. Anil, K. Henson, S. Biesemans, Nadine Collaert	2004	31
15	A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages Solid-State Electronics ·K.G. Anil, Souvik Mahapatra, I. Eisele	2003	6
16	Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs DSpace (IIT Bombay) ·K.G. Anil, Souvik Mahapatra, I. Eisele	2002	8
17	Observation of double peak in the substrate current versus gate voltage characteristics of n-channel metal–oxide–semiconductor field effect transistors Applied Physics Letters ·K.G. Anil, I. Eisele, Souvik Mahapatra	2001	1
18	Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETs K.G. Anil, T. Pompl, Leonardo Peña Severiche	2000	1
19	Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping Thin Solid Films ·齐晓君, K.G. Anil, H. Geiger, W. Hänsch, Jörg Schulze, T. Sulima, I. Eisele	2000	1
20	Optimization of the channel doping profile of vertical sub-100 nm MOSFETs Thin Solid Films ·Saline, 齐晓君, K.G. Anil, W. Hänsch, Theodor Doll, T. Grabolla, Horst Schreiber, I. Eisele	1998	14

About K.G. Anil

K.G. Anil is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Artificial Intelligence, having authored 35 papers that have together received 460 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (31 papers), Semiconductor materials and devices (31 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers), Semiconductor materials and interfaces (9 papers), Silicon Carbide Semiconductor Technologies (8 papers), Ferroelectric and Negative Capacitance Devices (3 papers), VLSI and FPGA Design Techniques (2 papers) and Analog and Mixed-Signal Circuit Design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (437 citations), Atomic and Molecular Physics, and Optics (141 citations), Hardware and Architecture (11 citations), Biomedical Engineering (52 citations) and Materials Chemistry (38 citations). K.G. Anil has collaborated with scholars based in Belgium, Germany and United States. Frequent co-authors include S. Biesemans, Nadine Collaert, M. Jurczak, A. Veloso, K. De Meyer, A. Lauwers, I. Eisele, K. Henson, R. Rooyackers and Małgorzata Pawlak. Their work appears in journals such as IEEE Electron Device Letters, Solid-State Electronics, Microelectronic Engineering, Thin Solid Films and Applied Physics Letters.

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