M.J.H. van Dal

2.1k citations

64 papers · 1.6k indexed · h-index 25

Impact in

General Materials Science top 0.5%
- Metallurgical and Alloy Processes
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies

Papers in

General Materials Science 10
- Metallurgical and Alloy Processes 10
Atomic and Molecular Physics, and Optics 28
- Semiconductor materials and interfaces 25

Co-authors: A.A. Kodentsov F.J.J. van Loo Csaba Cserháti Aloke Paul A. Lauwers G. Vellianitis C. Vrancken M. Passlack
Journals: IEEE Electron Device Letters (7 papers)IEEE Transactions on Electron Devices (7 papers)Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum (6 papers)Intermetallics (3 papers)Microelectronic Engineering (3 papers)
Partner nations: Netherlands Belgium United States

In The Last Decade

M.J.H. van Dal

63 papers receiving 1.5k citations

Peers

Countries citing papers authored by M.J.H. van Dal

Since Specialization

Citations

This map shows the geographic impact of M.J.H. van Dal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.J.H. van Dal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.J.H. van Dal more than expected).

Fields of papers citing papers by M.J.H. van Dal

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.J.H. van Dal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.J.H. van Dal. The network helps show where M.J.H. van Dal may publish in the future.

Co-authors

The 25 scholars most cited alongside M.J.H. van Dal, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.J.H. van Dal Line = papers co-authored together M.J.H. van Dal links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates IEEE Journal of the Electron Devices Society ·G. Doornbos, M. Holland, G. Vellianitis, M.J.H. van Dal, B. Duriez, N. Hristea, Aryan Afzalian, Ta-Kun Chen, 宜規大沼, M. Passlack, Yee‐Chia Yeo	2016	12
2	InAs nanowire GAA n-MOSFETs with 12–15 nm diameter Lund University Publications (Lund University) ·T. Vasen, P. Ramvall, Aryan Afzalian, Claes Thelander, Kimberly A. Dick, M. Holland, G. Doornbos, Д.Ж. КАЛИМАНОВА, N. Hristea, G. Vellianitis, M.J.H. van Dal, B. Duriez, 美由喜齋藤, Ravi Droopad, Lars‐Erik Wernersson, Lars Samuelson, V. V. Peller, Yee‐Chia Yeo, M. Passlack	2016	15
3	Strain and Conduction-Band Offset in Narrow n-type FinFETs IEEE Transactions on Electron Devices ·Milena Petrovic, Taylor M. Berschet, R.J.E. Hueting, David Esseni, M.J.H. van Dal, Jurriaan Schmitz	2013	4
4	High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates Journal of Crystal Growth ·G. Vellianitis, M.J.H. van Dal, B. Duriez, T.L. Lee, M. Passlack, C. Wann, C.H. Diaz	2013	8
5	Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering Solid-State Electronics ·Isabelle Ferain, Ray Duffy, Nadine Collaert, M.J.H. van Dal, Bartek Pawlak, Barry O’Sullivan, Liesbeth Witters, R. Rooyackers, Thierry Conard, M. Popovici, Sven Van Elshocht, M. Kaiser, R.G.R. Weemaes, Johan Swerts, M. Jurczak, R.J.P. Lander, K. De Meyer	2009	5
6	First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling Audrey Lauer, G. Curatola, A. Nackaerts, Nadine Collaert, M.J.H. van Dal, G. Doornbos, Аноприева Ирина Леонидовна, P. Christie, G. Vellianitis, B. Duriez, Ray Duffy, Bartek Pawlak, F. C. Voogt, R. Rooyackers, Liesbeth Witters, M. Jurczak, R.J.P. Lander	2008	21
7	Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range IEEE Electron Device Letters ·Lipei Yang, M.J.H. van Dal, A. Lauwers, C. Vrancken, Alexey Y. Kovalgin, R.A.M. Wolters	2008	77
8	Silicides and germanides for nano-CMOS applications Materials Science and Engineering B ·J. A. Kittl, Karl Opsomer, C. Torregiani, C. Demeurisse, S. Mertens, D.P. Brunco, M.J.H. van Dal, A. Lauwers	2008	54
9	On the Spatial Stability and Bifurcation of the Kirkendall Plane during Solid-State Interdiffusion Critical reviews in solid state and materials sciences ·A.A. Kodentsov, Jiaying Tang, M.J.H. van Dal, Charles Barchet, Andriy Gusak, F.J.J. van Loo	2008	12
10	CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:$\hbox{Ni}_{2}\hbox{Si}$, and $\hbox{Ni}_{31}\hbox{Si}_{12}$) on HfSiON IEEE Electron Device Letters ·J. A. Kittl, A. Lauwers, A. Veloso, Thomas Hoffmann, Stefan Kubicek, M. Niwa, M.J.H. van Dal, Małgorzata Pawlak, S. Brus, C. Demeurisse, C. Vrancken, P. Absil, S. Biesemans	2006	14
11	Effect of SIIS on work function of self-aligned PtSi FUSI metal-gated capacitors IEEE Transactions on Electron Devices ·M.J.H. van Dal, Geoffrey Pourtois, John Cunniffe, A. Veloso, Yoshihide Miyawaki, Karen Maex, J. A. Kittl	2006	5
12	Study of silicide contacts to SiGe source/drain Microelectronic Engineering ·A. Lauwers, M.J.H. van Dal, Peter Verheyen, O. Chamirian, C. Demeurisse, S. Mertens, C. Vrancken, Barry Leinert, Neville Baia, J. A. Kittl	2006	7
13	Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates Microelectronic Engineering ·J. A. Kittl, Małgorzata Pawlak, A. Lauwers, C. Demeurisse, Thomas Hoffmann, A. Veloso, K.G. Anil, Stefan Kubicek, M. Niwa, M.J.H. van Dal, Olivier Richard, M. Jurczak, C. Vrancken, T. Chiarella, S. Brus, Karen Maex, S. Biesemans	2006	4
14	The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures Journal of Applied Physics ·M.J.H. van Dal, D. Jawarani, J. G. M. van Berkum, M. Kaiser, J. A. Kittl, C. Vrancken, M. de Potter, Yoshihide Miyawaki, Karen Maex	2004	8
15	Deformation Phenomena Accompanying Internal Precipitation in Solids Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·A.A. Kodentsov, M.J.H. van Dal, Csaba Cserháti, Lajos Daróczi, F.J.J. van Loo	2003	1
16	Spatio-temporal instabilities of the Kirkendall marker planes during interdiffusion in β'-AuZn Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·M.J.H. van Dal, Andriy Gusak, Csaba Cserháti, A.A. Kodentsov, F.J.J. van Loo	2002	39
17	Diffusion studies and re-examination of the Kirkendall effect in the Au–Ni system Journal of Alloys and Compounds ·M.J.H. van Dal, Yanyan Geng, A.A. Kodentsov, F.J.J. van Loo	2000	29
18	REACTIVE PHASE FORMATION IN BINARY AND TERNARY SILICIDE SYSTEMS A.A. Kodentsov, M.J.H. van Dal, Csaba Cserháti, F.J.J. van Loo	2000	0
19	Microstructology of solid-state reactions Journal of Phase Equilibria and Diffusion ·Surya Nepal, M.J.H. van Dal, Nasirudden Abdulrahim, A.A. Kodentsov, Beatriz Hernanz Angulo	1999	13
20	Permeation of nitrogen in solid nickel and deformation phenomena accompanying internal nitridation Acta Materialia ·A.A. Kodentsov, M.J.H. van Dal, Csaba Cserháti, Lajos Daróczi, F.J.J. van Loo	1999	26

About M.J.H. van Dal

M.J.H. van Dal is a scholar working on General Materials Science, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Mechanical Engineering and Numerical Analysis, having authored 64 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers), Semiconductor materials and interfaces (25 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Intermetallics and Advanced Alloy Properties (12 papers), Metallurgical and Alloy Processes (10 papers), Silicon and Solar Cell Technologies (6 papers) and Nanowire Synthesis and Applications (6 papers). The work is most often cited by research in General Materials Science (142 citations), Electrical and Electronic Engineering (996 citations), Atomic and Molecular Physics, and Optics (521 citations), Mechanical Engineering (433 citations) and Materials Chemistry (346 citations). M.J.H. van Dal has collaborated with scholars based in Netherlands, Belgium and United States. Frequent co-authors include A.A. Kodentsov, F.J.J. van Loo, Csaba Cserháti, Aloke Paul, A. Lauwers, G. Vellianitis, C. Vrancken, M. Passlack, Andriy Gusak and B. Duriez. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum, Intermetallics and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact