M. Lorenzini

412 total citations
34 papers, 305 citations indexed

About

M. Lorenzini is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. Lorenzini has authored 34 papers receiving a total of 305 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 8 papers in Condensed Matter Physics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. Lorenzini's work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and GaN-based semiconductor devices and materials (7 papers). M. Lorenzini is often cited by papers focused on Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and GaN-based semiconductor devices and materials (7 papers). M. Lorenzini collaborates with scholars based in Belgium, Netherlands and Italy. M. Lorenzini's co-authors include G. Groeseneken, L. Haspeslagh, D. Wellekens, Jan Van Houdt, R. Degraeve, G. Tempel, Paul Hendrickx, B. Kaczer, L. Breuil and H.E. Maes and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Transactions on Electron Devices and Europhysics Letters (EPL).

In The Last Decade

M. Lorenzini

32 papers receiving 291 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Lorenzini Belgium 10 264 42 40 36 32 34 305
Renichi Yamada Japan 11 376 1.4× 17 0.4× 35 0.9× 28 0.8× 71 2.2× 32 406
H. Hazama Japan 10 302 1.1× 26 0.6× 17 0.4× 35 1.0× 59 1.8× 28 334
J.M. Higman United States 12 356 1.3× 22 0.5× 10 0.3× 37 1.0× 100 3.1× 35 387
H. Iizuka Japan 11 327 1.2× 22 0.5× 9 0.2× 42 1.2× 58 1.8× 27 343
Masataka Ohta Japan 9 189 0.7× 122 2.9× 69 1.7× 47 1.3× 135 4.2× 39 291
R. Yamada Japan 10 194 0.7× 66 1.6× 88 2.2× 68 1.9× 61 1.9× 26 323
R. Wang United States 6 90 0.3× 55 1.3× 54 1.4× 20 0.6× 41 1.3× 10 139
Y.J. Wang Taiwan 5 268 1.0× 38 0.9× 16 0.4× 14 0.4× 163 5.1× 8 307
Tim LaRocca United States 12 453 1.7× 26 0.6× 21 0.5× 7 0.2× 32 1.0× 25 470
B. Martin Switzerland 8 87 0.3× 52 1.2× 6 0.1× 46 1.3× 20 0.6× 39 220

Countries citing papers authored by M. Lorenzini

Since Specialization
Citations

This map shows the geographic impact of M. Lorenzini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Lorenzini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Lorenzini more than expected).

Fields of papers citing papers by M. Lorenzini

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Lorenzini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Lorenzini. The network helps show where M. Lorenzini may publish in the future.

Co-authorship network of co-authors of M. Lorenzini

This figure shows the co-authorship network connecting the top 25 collaborators of M. Lorenzini. A scholar is included among the top collaborators of M. Lorenzini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Lorenzini. M. Lorenzini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Avolio, Gustavo, et al.. (2024). Double-pulse load-pull for trapping Characterization of GaN Transistors. 1–4. 2 indexed citations
2.
Gibiino, Gian Piero, et al.. (2023). RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 1–4. 1 indexed citations
3.
Chen, Ding-Yuan, Mattias Thorsell, M. Lorenzini, et al.. (2022). Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures. physica status solidi (a). 220(16). 9 indexed citations
4.
Hou, Rui, et al.. (2016). Nonintrusive Near-Field Characterization of Spatially Distributed Effects in Large-Periphery High-Power GaN HEMTs. IEEE Transactions on Microwave Theory and Techniques. 64(11). 4048–4062. 12 indexed citations
5.
Waltereit, Patrick, W. Bronner, R. Quay, et al.. (2010). Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(10). 2398–2403. 5 indexed citations
6.
Vassilev, V., M. Lorenzini, & G. Groeseneken. (2006). MOSFET ESD Breakdown Modeling and Parameter Extraction in Advanced CMOS Technologies. IEEE Transactions on Electron Devices. 53(9). 2108–2117. 6 indexed citations
7.
Breuil, L., L. Haspeslagh, M. Lorenzini, Joeri De Vos, & Jan Van Houdt. (2005). Scaling effects in dual-bit split-gate nitride memory devices. Solid-State Electronics. 49(11). 1862–1866. 1 indexed citations
8.
Breuil, L., et al.. (2005). A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device. IEEE Transactions on Electron Devices. 52(10). 2250–2257. 27 indexed citations
9.
Pantisano, L., E. Cartier, A. Kerber, et al.. (2004). Dynamics of threshold voltage instability in stacked high-k dielectrics: role of the interfacial oxide. 163–164. 17 indexed citations
10.
Vassilev, V., M. Lorenzini, В.А. Ващенко, et al.. (2004). Snapback circuit model for cascoded NMOS ESD over-voltage protection structures. 561–564. 6 indexed citations
11.
Lorenzini, M., M. Rosmeulen, L. Breuil, et al.. (2004). Lateral Distribution of Electrons Trapped in Nitride Layers. MRS Proceedings. 830. 1 indexed citations
12.
Degraeve, R., B. Kaczer, M. Lorenzini, et al.. (2004). Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash Memories. IEEE Transactions on Electron Devices. 51(9). 1392–1400. 66 indexed citations
13.
Chibotaru, Liviu F., Arnout Ceulemans, M. Lorenzini, & Victor V. Moshchalkov. (2003). Vorticity quantum numbers for confined electrons. Europhysics Letters (EPL). 63(3). 476–477. 6 indexed citations
14.
Chibotaru, Liviu F., Arnout Ceulemans, M. Lorenzini, & V. V. Moshchalkov. (2003). Vorticity quantum numbers for confined electrons. Europhysics Letters (EPL). 63(2). 159–165. 11 indexed citations
15.
Degraeve, R., M. Lorenzini, D. Wellekens, et al.. (2002). Analytical model for failure rate prediction due to anomalous charge loss of flash memories. 32.1.1–32.1.4. 31 indexed citations
16.
Degraeve, R., B. Kaczer, M. Lorenzini, et al.. (2001). Statistical model for SILC and pre-breakdown current jumps in ultra-thin oxide layers. 2 indexed citations
17.
Houdt, Jan Van, D. Wellekens, L. Haspeslagh, et al.. (2000). Study of Secondary Electron Injection Phenomena in Deep Sub-micron MOSFETs and Flash Cells. 144–147. 4 indexed citations
18.
Houdt, Jan Van, et al.. (1999). Back-bias Enhanced Source-Side Injection in 0.25um Embedded Flash Memories. European Solid-State Device Research Conference. 1. 608–611. 3 indexed citations
19.
Lorenzini, M., et al.. (1999). Three-dimensional modeling of the erasing operation in a submicron flash-EEPROM memory cell. IEEE Transactions on Electron Devices. 46(5). 975–983. 5 indexed citations
20.
Rudan, M., et al.. (1998). Device Modelling: Limitations and Perspective for Advanced Technologies. European Solid-State Device Research Conference. 25–33. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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