Valeri Afanasiev

515 total citations
23 papers, 300 citations indexed

About

Valeri Afanasiev is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Valeri Afanasiev has authored 23 papers receiving a total of 300 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Valeri Afanasiev's work include Semiconductor materials and devices (8 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Advanced Memory and Neural Computing (5 papers). Valeri Afanasiev is often cited by papers focused on Semiconductor materials and devices (8 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Advanced Memory and Neural Computing (5 papers). Valeri Afanasiev collaborates with scholars based in Belgium, Netherlands and United States. Valeri Afanasiev's co-authors include Michel Houssa, Marc Heyns, Annelies Delabie, Marc Meuris, K. De Meyer, Matty Caymax, Thierry Conard, Florence Bellenger, Geoffrey Pourtois and Ruishen Meng and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Journal of Physics Condensed Matter.

In The Last Decade

Valeri Afanasiev

18 papers receiving 291 citations

Peers

Countries citing papers authored by Valeri Afanasiev

Since Specialization

Citations

This map shows the geographic impact of Valeri Afanasiev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Valeri Afanasiev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Valeri Afanasiev more than expected).

Fields of papers citing papers by Valeri Afanasiev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Valeri Afanasiev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Valeri Afanasiev. The network helps show where Valeri Afanasiev may publish in the future.

Co-authorship network of co-authors of Valeri Afanasiev

This figure shows the co-authorship network connecting the top 25 collaborators of Valeri Afanasiev. A scholar is included among the top collaborators of Valeri Afanasiev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Valeri Afanasiev. Valeri Afanasiev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs 2025 ·IEEE Electron Device Letters ·(unknown), Dennis Lin, Subhali Subhechha, Adrian Chasin, Daisuke Matsubayashi, Michiel J. van Setten, (unknown), Harold Dekkers, (unknown), S. Subramanian, (unknown), Nouredine Rassoul, Yuchao Jiang, Jan Van Houdt, Valeri Afanasiev, Gouri Sankar Kar, Attilio Belmonte	0
2	Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics 2025 ·IEEE Journal of the Electron Devices Society ·(unknown), N. Ronchi, (unknown), (unknown), M. Popovici, Harold Dekkers, (unknown), G. Van den bosch, M. Rosmeulen, Valeri Afanasiev, Jan Van Houdt	0
3	Energy band alignment in MoS2/HfO2: Transfer-related artifacts and interfacial effects 2025 ·Journal of Applied Physics ·(unknown), Konstantin Iakoubovskii, Dennis Lin, Inge Asselberghs, Abhinav Gaur, (unknown), Valeri Afanasiev	1
4	Multi-step trap-assisted tunneling in Al-doped HfO2 used in advanced 2.5D metal–insulator–metal capacitors 2025 ·Journal of Applied Physics ·(unknown), (unknown), Kristof Croes, Michele Stucchi, Valeri Afanasiev	0
5	Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-Destructive Read 2025 ·IEEE Electron Device Letters ·(unknown), (unknown), M. Popovici, Sergiu Clima, Yang Xiang, (unknown), Attilio Belmonte, Gouri Sankar Kar, Francky Catthoor, Shimeng Yu, Valeri Afanasiev, Jan Van Houdt	0
6	Cryogenic Temperature Effects on 16nm FinFet Performance and Mismatch 2024 ·(unknown), Alexander Grill, (unknown), (unknown), E. Bury, Adrian Chasin, B. Kaczer, Kristiaan De Greve, Valeri Afanasiev	1
7	Interaction of graphene with Au _n clusters: a first-principles study 2022 ·Journal of Physics Condensed Matter ·(unknown), Ruishen Meng, (unknown), (unknown), Ewald Janssens, Joris Van de Vondel, Valeri Afanasiev, Michel Houssa	2
8	Variability of band alignment between WS2 and SiO2: Intrinsic versus extrinsic contributions 2022 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), (unknown), (unknown), Stephen McDonnell, Daniele Chiappe, Valeri Afanasiev	2
9	Search for sterile neutrinos with the Neutrino-4 experiment and measurement results 2021 ·Physical review. D ·A. П. Серебров, (unknown), (unknown), А. К. Фомин, (unknown), (unknown), V. L. Golovtsov, (unknown), (unknown), O. M. Zherebtsov, (unknown), A. L. Petelin, (unknown), (unknown), (unknown), (unknown), Valeri Afanasiev, (unknown), A. Gerasimov, V. V. Fedorov	53
10	Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene 2021 ·arXiv (Cornell University) ·(unknown), Ruishen Meng, Mariela Menghini, Valeri Afanasiev, Jin Won Seo, Michel Houssa, Jean‐Pierre Locquet	16
11	Ferromagnetism and half-metallicity in two-dimensional MO (M=Ga,In) monolayers induced by hole doping 2020 ·Physical Review Materials ·Ruishen Meng, Michel Houssa, Konstantina Iordanidou, Geoffrey Pourtois, Valeri Afanasiev, A. Stesmans	21
12	Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping 2020 ·Journal of Applied Physics ·Ruishen Meng, Michel Houssa, Konstantina Iordanidou, Geoffrey Pourtois, Valeri Afanasiev, A. Stesmans	13
13	Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich Ge<inf>x</inf>Se<inf>1−x</inf> materials for selector applications 2017 ·Sergiu Clima, B. Govoreanu, Karl Opsomer, Alin Velea, (unknown), Wouter Devulder, (unknown), Gabriele Luca Donadio, T. Witters, Shreya Kundu, L. Goux, Valeri Afanasiev, Gouri Sankar Kar, Geoffrey Pourtois	19
14	Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode 2013 ·Microelectronic Engineering ·(unknown), L. Goux, L. Pantisano, Johan Swerts, Christoph Adelmann, S. Mertens, Valeri Afanasiev, (unknown), B. Govoreanu, R. Degraeve, Stefan Kubicek, Vasile Paraschiv, (unknown), N. Jossart, L. Altimime, M. Jurczak, J. A. Kittl, G. Groeseneken, Dirk J. Wouters	8
15	Fully CMOS BEOL compatible HfO<inf>2</inf> RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode 2011 ·(unknown), L. Goux, L. Pantisano, (unknown), Christoph Adelmann, S. Mertens, Valeri Afanasiev, (unknown), B. Govoreanu, R. Degraeve, Stefan Kubicek, Vasile Paraschiv, (unknown), N. Jossart, L. Altimime, M. Jurczak, J. A. Kittl, G. Groeseneken, Dirk J. Wouters	9
16	Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates 2007 ·Microelectronic Engineering ·Zhe Li, T. Schram, L. Pantisano, T. Witters, A. Stesmans, A. Akheyar, Valeri Afanasiev, Naoki Yamada, (unknown), Stefan De Gendt, K. De Meyer	1
17	Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks 2007 ·Microelectronics Reliability ·(unknown), T. Schram, L. Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, Valeri Afanasiev, A. Akheyar, Sven Van Elshocht, D.P. Brunco, (unknown), Naoki Yoshioka, P. Lehnen, Stefan De Gendt, K. De Meyer	3
18	Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments 2007 ·Journal of The Electrochemical Society ·Florence Bellenger, Michel Houssa, Annelies Delabie, Valeri Afanasiev, Thierry Conard, Matty Caymax, Marc Meuris, K. De Meyer, Marc Heyns	108
19	Rare-earth Metal Scandate High-k Layers: Promises and Problems 2006 ·ECS Meeting Abstracts ·(unknown), T. Heeg, Martin Wagner, J. Schubert, T. Witters, Bert Brijs, H. Bender, (unknown), Valeri Afanasiev, Matty Caymax, Stefan De Gendt	0
20	The electronic structure of crystalline nickel oxides 1994 ·Journal of Electron Spectroscopy and Related Phenomena ·R. A. Évarestov, Valera Veryazov, I. I. Tupitsyn, Valeri Afanasiev	11

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