S. Jakschik

1.0k citations

39 papers · 866 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 37
- Semiconductor materials and devices 28
- Advancements in Semiconductor Devices and Circuit Design 13
- Integrated Circuits and Semiconductor Failure Analysis 12
- Ferroelectric and Negative Capacitance Devices 10
- Advanced Memory and Neural Computing 6
Electronic, Optical and Magnetic Materials 7
- Copper Interconnects and Reliability 7

Co-authors: T. Hecht Uwe Schroeder Johann W. Bartha U. Schröder M. Städele Michael Specht A. Bergmaier Thomas Mikolajick
Journals: IEEE Electron Device Letters (2 papers)Applied Surface Science (2 papers)Advanced Engineering Materials (2 papers)Microelectronic Engineering (2 papers)Solid-State Electronics (2 papers)
Partner nations: Germany Belgium United States

In The Last Decade

S. Jakschik

39 papers receiving 838 citations

Peers

Countries citing papers authored by S. Jakschik

Since Specialization

Citations

This map shows the geographic impact of S. Jakschik's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Jakschik with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Jakschik more than expected).

Fields of papers citing papers by S. Jakschik

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Jakschik. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Jakschik. The network helps show where S. Jakschik may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Jakschik, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Jakschik Line = papers co-authored together S. Jakschik links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Laser Fumes in Femtosecond Laser Processes – Product, Process and Environment Considerations Photonics Russia ·S. Jakschik, 于华 Yu Hua	2016	1
2	An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications Journal of Applied Physics ·Anthony Graham, Li-Yang Zou, S. Jakschik, Steve Knebel, W. Weber, U. Schröder, Thomas Mikolajick	2012	3
3	Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Jana Mejzlíková, S. Jakschik, Byung-Gak Son, Andre Wachowiak, Thomas Mikolajick, L. Frey	2012	2
4	Dielectric Backside Passivation – Improvements by Dipole Optimization Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) ·S. Jakschik, Elke Erben, Manoel dos Passos Oliveira Teles, Jean-Baptiste Fotso Djemo, I. Dirnstorfer, Marcus Rose, I. Endler, Thomas Mikolajick	2011	2
5	Scanning Spreading Resistance Microscopy as a Technique for Silicon Solar Cell Emitter Structure Characterization EU PVSEC ·Julius Ratzenberger, S. Jakschik, Thomas Mikolajick, Pierre Eyben, Thomas Hantschel, Wilfried Vandervorst	2011	2
6	Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation Solid-State Electronics ·Jana Mejzlíková, S. Jakschik, A. Burenkov, Byung-Gak Son, Thomas Mikolajick, L. Frey	2011	1
7	Carbon junction implant: Effect on leakage currents and defect distribution Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) ·Jana Mejzlíková, S. Jakschik, Byung-Gak Son, Thomas Mikolajick, L. Frey	2010	3
8	NI (PT) SI Thermal Stability Improvement by Carbon Implantation ECS Transactions ·S. Mertens, T. Y. Hoffmann, C. Vrancken, S. Jakschik, Olivier Richard, Eveline Verleysen, H. Bender, Chao Zhao, Wilfried Vandervorst, P. Absil, A. Lauwers	2008	8
9	Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric IEEE Electron Device Letters ·José Ignacio Fernández-Villamor, S. Jakschik, T. Alfaya Arias, S. Kudelka, Wolfgang H. Krautschneider	2008	2
10	A 50nm high-k poly silicon gate stack with a buried SiGe channel S. Jakschik, Thomas Hoffmann, 王洪斌, A. Veloso, Roger Loo, Tom Mazin, Gloria Patricia Rodríguez-Montoya, Charlotte Simon, M. de Potter, Geert Eneman, S. Severi, P. Absil, S. Biesemans	2007	1
11	Influence of Stress-Induced Leakage Current on Reliability of $\hbox{HfSiO}_{x}$ IEEE Transactions on Device and Materials Reliability ·S. Jakschik, T. Kauerauf, R. Degraeve, Y.N. Hwang, R. Duschl, M. Kerber, José Ignacio Fernández-Villamor, S. Kudelka	2007	6
12	HfAlOx and HfSiOx based dielectrics for future dram application Johannes Heitmann, José Ignacio Fernández-Villamor, Almudena Gutiérrez Abad, Elke Erben, Karen Valdés, S. Jakschik, S. Kudelka, Uwe Schroeder	2006	1
13	Selective epitaxial Si/SiGe growth forV_Tshift adjustment in highkpMOS devices Semiconductor Science and Technology ·Roger Loo, Gloria Patricia Rodríguez-Montoya, Hassan Matinhomaei, 美香山本, Tom Mazin, S. Jakschik, Narun Sriviha, Jailson Almeida Conceição, Matty Caymax	2006	16
14	Influence of gate material and stress voltage on post breakdown leakage current of high K dielectrics R. Duschl, M. Kerber, Uwe Schroeder, T. Hecht, S. Jakschik, Rob DePierre, S. Kudelka	2005	1
15	High resolution elastic recoil detection Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·G. Dollinger, A. Bergmaier, Dolly Luz, Philipp Neumaier, Wilfried Vandervorst, S. Jakschik	2004	26
16	Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics Applied Physics Letters ·Michael Specht, M. Städele, S. Jakschik, U. Schröder	2004	106
17	Influence of charge trapping on AC reliability of high-k dielectrics M. Kerber, R. Duschl, H. Reisinger, S. Jakschik, U. Schröder, T. Hecht, S. Kudelka	2004	6
18	Influence of<tex>$hbox Al_2hbox O_3$</tex>Dielectrics on the Trap-Depth Profiles in MOS Devices Investigated by the Charge-Pumping Method IEEE Transactions on Electron Devices ·S. Jakschik, José Ignacio Fernández-Villamor, Uwe Schroeder, Johann W. Bartha	2004	34
19	Mechanism and growth rate of underfill delaminations in flip chips S. Jakschik, Asghar Nawab, E. Meusel	2002	5
20	Capacitance enhancement techniques for sub-100 nm trench DRAMs M. Gutsche, Muh. Restu Ray Amir Sulaiman, Moira Levitt, A. Birner, T. Hecht, S. Jakschik, M. Kerber, M. Leonhardt, P. Moll, T. Pompl, H. Reisinger, Jean Paul Aurioles Tapia, Isabel Maria Pais de Abreu Filipe da Silveira Botelho, Uwe Schroeder, B. Sell, Paul Henry John Donachie, D. Schumann	2002	17

About S. Jakschik

S. Jakschik is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Surfaces, Coatings and Films, having authored 39 papers that have together received 866 indexed citations. Recurring topics across this work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers), Ferroelectric and Negative Capacitance Devices (10 papers), Copper Interconnects and Reliability (7 papers), Semiconductor materials and interfaces (6 papers), Advanced Memory and Neural Computing (6 papers) and Electronic and Structural Properties of Oxides (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (772 citations), Materials Chemistry (353 citations), Electronic, Optical and Magnetic Materials (108 citations), Atomic and Molecular Physics, and Optics (117 citations) and Polymers and Plastics (51 citations). S. Jakschik has collaborated with scholars based in Germany, Belgium and United States. Frequent co-authors include T. Hecht, Uwe Schroeder, Johann W. Bartha, U. Schröder, M. Städele, Michael Specht, A. Bergmaier, Thomas Mikolajick, Stefan Slesazeck and Hannes Mähne. Their work appears in journals such as IEEE Electron Device Letters, Applied Surface Science, Advanced Engineering Materials, Microelectronic Engineering and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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