E. Röhr

549 total citations
24 papers, 305 citations indexed

About

E. Röhr is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Computational Mechanics. According to data from OpenAlex, E. Röhr has authored 24 papers receiving a total of 305 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 5 papers in Electronic, Optical and Magnetic Materials and 3 papers in Computational Mechanics. Recurrent topics in E. Röhr's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). E. Röhr is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). E. Röhr collaborates with scholars based in Belgium, Netherlands and Japan. E. Röhr's co-authors include Marc Heyns, Guy Vereecke, T. Schram, Lars‐Åke Ragnarsson, Stefan De Gendt, Barry O’Sullivan, L. Pantisano, V. Kaushik, Annelies Delabie and Sven Van Elshocht and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Applied Surface Science.

In The Last Decade

E. Röhr

22 papers receiving 290 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Röhr Belgium	10	223	81	51	44	42	24	305
James Natoli France	8	90 0.4×	89 1.1×	50 1.0×	28 0.6×	56 1.3×	10	197
Diane Cooke United States	7	75 0.3×	154 1.9×	59 1.2×	63 1.4×	97 2.3×	10	251
Chengkun Wu China	9	187 0.8×	158 2.0×	56 1.1×	143 3.3×	144 3.4×	16	349
Sybille Hopman Germany	11	293 1.3×	119 1.5×	33 0.6×	73 1.7×	71 1.7×	26	347
Ryozo Kurosaki Japan	11	74 0.3×	216 2.7×	64 1.3×	31 0.7×	203 4.8×	32	289
Changning Liu China	11	192 0.9×	99 1.2×	19 0.4×	12 0.3×	159 3.8×	32	336
Jim Bovatsek United States	7	141 0.6×	210 2.6×	59 1.2×	62 1.4×	93 2.2×	21	317
G. Coustillier France	7	123 0.6×	217 2.7×	108 2.1×	66 1.5×	85 2.0×	14	322
M. Nakano Japan	10	289 1.3×	77 1.0×	39 0.8×	107 2.4×	70 1.7×	29	346
H. Löschner Austria	9	209 0.9×	78 1.0×	36 0.7×	22 0.5×	119 2.8×	44	255

Countries citing papers authored by E. Röhr

Since Specialization

Citations

This map shows the geographic impact of E. Röhr's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Röhr with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Röhr more than expected).

Fields of papers citing papers by E. Röhr

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Röhr. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Röhr. The network helps show where E. Röhr may publish in the future.

Co-authorship network of co-authors of E. Röhr

This figure shows the co-authorship network connecting the top 25 collaborators of E. Röhr. A scholar is included among the top collaborators of E. Röhr based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Röhr. E. Röhr is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ragnarsson, Lars‐Åke, Christoph Adelmann, Yuichi Higuchi, et al.. (2012). Implementing cubic-phase HfO<inf>2</inf> with κ-value ∼ 30 in low-V<inf>T</inf> replacement gate pMOS devices for improved EOT-Scaling and reliability. 91. 27–28. 9 indexed citations

Yamaguchi, Shimpei, Jérôme Mitard, Geert Eneman, et al.. (2011). High performance Si<inf>.45</inf>Ge<inf>.55</inf> Implant Free Quantum Well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation. 19. 35.3.1–35.3.4. 6 indexed citations

Schram, T., et al.. (2009). Cleaning and Strip Requirement for Metal Gate Based CMOS Integration. ECS Transactions. 25(5). 17–28. 5 indexed citations

Ragnarsson, L.-Å., T. Schram, E. Röhr, et al.. (2009). Single-Metal Dual-Dielectric (SMDD) gate-first CMOS integration towards low V<inf>T</inf> and high performance. 49–50. 2 indexed citations

Simoen, Eddy, A. Akheyar, E. Röhr, A. Mercha, & Cor Claeys. (2009). Low-frequency Noise Analysis of the Impact of an LaO Cap Layer in HfSiON/Ta₂C Gate Stack nMOSFETs. ECS Transactions. 25(7). 237–245. 9 indexed citations

Ragnarsson, Lars‐Åke, T. Schram, E. Röhr, et al.. (2009). Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization. 42 indexed citations

Adelmann, Christoph, P. Lehnen, Thierry Conard, et al.. (2008). Thermally-Stable High Effective Work Function TaCN and Ta₂N Films for pMOS Metal Gate Applications. MRS Proceedings. 1073. 1 indexed citations

Veloso, A., Isabelle Ferain, M. Demand, et al.. (2008). Multiple-Vt FinFET devices through La<inf>2</inf>O<inf>3</inf> dielectric capping. 49 52. 121–122. 2 indexed citations

Hoffmann, T. Y., H.Y. Yu, M. Aoulaiche, et al.. (2008). Low VT metal-gate/high-k nMOSFETs — PBTI dependence and V<inf>T</inf> Tune-ability on La/Dy-capping layer locations and Laser annealing conditions. 62–63. 7 indexed citations

10.

O’Sullivan, Barry, et al.. (2007). Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation. IEEE Transactions on Electron Devices. 54(7). 1771–1775. 10 indexed citations

11.

Elshocht, Sven Van, An Hardy, Stefan De Gendt, et al.. (2006). Alternative Gate Dielectric Materials. ECS Transactions. 3(3). 479–497. 2 indexed citations

12.

O’Sullivan, Barry, V. Kaushik, L.-Å. Ragnarsson, et al.. (2006). Device performance of transistors with high-/spl kappa/ dielectrics using cross-wafer-scaled interface-layer thickness. IEEE Electron Device Letters. 27(7). 546–548. 14 indexed citations

13.

Kaushik, V., Barry O’Sullivan, Geoffrey Pourtois, et al.. (2006). Estimation of fixed charge densities in hafnium-silicate gate dielectrics. IEEE Transactions on Electron Devices. 53(10). 2627–2633. 56 indexed citations

14.

Röhr, E., Sangjin Hyun, Stefan De Gendt, et al.. (2006). Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation. ECS Transactions. 1(5). 305–310. 3 indexed citations

15.

Claes, Martine, Annelies Delabie, Sven Van Elshocht, et al.. (2005). Observation and characterization of defects in HfO2 high-K gate dielectric layers. Microelectronics Reliability. 45(5-6). 798–801. 5 indexed citations

16.

Claes, Martine, Stefan De Gendt, T. Witters, et al.. (2004). Effect of Postdeposition Anneal Conditions on Defect Density of HfO[sub 2] Layers Measured by Wet Etching. Journal of The Electrochemical Society. 151(11). F269–F269. 5 indexed citations

17.

Kaushik, V., E. Röhr, Stefan De Gendt, et al.. (2003). Effects of interactions between HfO<sub>2</sub> and poly-Si on MOSCAP and MOSFET electrical behavior. 745. 62–63. 2 indexed citations

18.

Elshocht, Sven Van, Matty Caymax, Martine Claes, et al.. (2003). Scalability of MOCVD-deposited Hafnium Oxide. MRS Proceedings. 765. 2 indexed citations

19.

Schram, T., L. Pantisano, Jacob C. Hooker, et al.. (2002). Impact of ALCVD and PVD Titanium Nitride Deposition on Metal Gate Capacitors. 583–586. 16 indexed citations

20.

Vereecke, Guy, E. Röhr, & Marc Heyns. (1999). Laser-assisted removal of particles on silicon wafers. Journal of Applied Physics. 85(7). 3837–3843. 87 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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