K. Henson

625 citations

23 papers · 279 indexed · h-index 11

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 23
- Semiconductor materials and devices 20
- Advancements in Semiconductor Devices and Circuit Design 19
- Integrated Circuits and Semiconductor Failure Analysis 13
- Silicon and Solar Cell Technologies 9
- 3D IC and TSV technologies 2
- Low-power high-performance VLSI design 1
- Ferroelectric and Negative Capacitance Devices 1
Atomic and Molecular Physics, and Optics 3
- Semiconductor materials and interfaces 3

Co-authors: K. De Meyer Nadine Collaert S. Biesemans K.G. Anil Richard Lindsay A. Lauwers B. Govoreanu Jan Van Houdt
Journals: IEEE Electron Device Letters (2 papers)Microelectronics Reliability (2 papers)Japanese Journal of Applied Physics (1 paper)Microelectronic Engineering (1 paper)Solid-State Electronics (1 paper)
Partner nations: Belgium United States Netherlands

In The Last Decade

K. Henson

20 papers receiving 255 citations

Peers

Countries citing papers authored by K. Henson

Since Specialization

Citations

This map shows the geographic impact of K. Henson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Henson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Henson more than expected).

Fields of papers citing papers by K. Henson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Henson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Henson. The network helps show where K. Henson may publish in the future.

Co-authorship network

The 25 scholars most cited alongside K. Henson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. Henson Line = papers co-authored together K. Henson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Arsenic Junction Thermal Stability and High-Dose Boron-Pocket Activation During SPER in nMOS Transistors IEEE Electron Device Letters ·S. Severi, Bartek Pawlak, Ray Duffy, E. Augendre, K. Henson, Richard Lindsay, K. De Meyer	2007	2
2	Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices G. Sanschagrin, K.G. Anil, 高樹大久保, Ray Duffy, K. Henson, Richard Lindsay, A. Lauwers, A. Veloso, J.F. de Mameffea, J. Ramos, Gabriela Latour, Pierre Eyben, C. Dachs, К И Липчиу, M. Jurczak, S. Biesemans, A Kanagalakshmi	2005	13
3	Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors Microelectronics Reliability ·T. Schram, L.-Å. Ragnarsson, Narun Sriviha, Xunkang Chen, M. Yuan, Wilman Tsai, K. Henson, R.J.P. Lander, Jacob C. Hooker, Y.Ch. Wang, K. De Meyer, Stefan De Gendt, Marc Heyns	2005	18
4	Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development Microelectronics Reliability ·S. Beckx, M. Demand, S. Locorotondo, K. Henson, Martine Claes, Vasile Paraschiv, Denis Shamiryan, Patrick Jaenen, Werner Boullart, 陈仲达, S. Biesemans, S. Vanhaelemeersch, Y.Ch. Wang, V. Antonucci	2005	10
5	Device Characteristics of Ultra-shallow Junctions Formed by fRTP Annealing MRS Proceedings ·A. Satta, Richard Lindsay, Stefano Severi, K. Henson, Karen Maex, S. McCoy, Adhani Jurianti, Mathilde Valentin	2004	3
6	Demonstration of fully Ni-silicided metal gates on HfO/sub 2/ based high-k gate dielectrics as a candidate for low power applications K.G. Anil, A. Veloso, Stefan Kubicek, T. Schram, E. Augendre, Jean‐François de Marneffe, K. Devriendt, A. Lauwers, S. Brus, K. Henson, S. Biesemans	2004	30
7	Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node MRS Proceedings ·S. Severi, K. Henson, Richard Lindsay, A. Lauwers, Bartek Pawlak, R. Surdeanu, K. De Meyer	2004	5
8	Layout density analysis of FinFETs K.G. Anil, K. Henson, S. Biesemans, Nadine Collaert	2004	31
9	Channel engineering towards a full low temperature process solution for the 45 nm technology node [NMOS transistors] S. Severi, K. Henson, Richard Lindsay, J Bardin, K. De Meyer	2004	2
10	Ni-Silicided Deep Source/Drain Junctions Formed by Solid Phase Epitaxial Regrowth MRS Proceedings ·A. Lauwers, Richard Lindsay, K. Henson, S. Severi, A. Akheyar, Bartek Pawlak, N.S. Desyatov, Karen Maex	2004	3
11	Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Richard Lindsay, K. Henson, W. Vandervorst, Karen Maex, J Bardin, Ray Duffy, R. Surdeanu, P.A. Stolk, J. A. Kittl, C. M. Johnson, Xavier Llimona i Pagès, Yu-Xia	2004	22
12	SPER junction optimisation in 45 nm CMOS devices Richard Lindsay, S. Severi, Bartek Pawlak, K. Henson, A. Lauwers, Xavier Llimona i Pagès, A. Satta, R. Surdeanu, Aisha Saeed, Karen Maex	2004	7
13	Integration of low and high temperature junction anneals for 45 NM CMOs Richard Lindsay, J Bardin, K. Henson, A. Satta, G. Sanschagrin, A. Lauwers, R. Surdeanu, S. McCoy, Adhani Jurianti, Xavier Llimona i Pagès, Karen Maex	2004	0
14	Extraction of the gate oxide thickness of N- and P-Channel MOSFETs below 20 Å from the substrate current resulting from valence-band electron tunneling A. Shanware, Tanner J Urmston, Hisham Z. Massoud, Eric M. Vogel, K. Henson, Anshuman Srivastava, Ahmad Jamaludin, John R. Hauser, J. J. Wortman	2003	10
15	A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS MRS Proceedings ·Richard Lindsay, J Bardin, J. A. Kittl, K. Henson, C. Torregiani, C. M. Johnson, R. Surdeanu, W. Vandervorst, A. J. Mayur, XU Jianguan, S. McCoy, Adhani Jurianti, Mathilde Valentin, Xavier Llimona i Pagès, A. Satta, A. Lauwers, P.A. Stolk, Karen Maex	2003	36
16	An investigation of the electron tunneling leakage current through ultrathin oxides/high-k gate stacks at inversion conditions B. Govoreanu, Pieter Blomme, K. Henson, Jan Van Houdt, K. De Meyer	2003	10
17	An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers Solid-State Electronics ·B. Govoreanu, Pieter Blomme, K. Henson, Jan Van Houdt, K. De Meyer	2003	21
18	Investigation of Performance Improvement and Gate-to-junction Leakage Reduction for the 90nm CMOS Gate Stack Architecture K. Henson, Stefan Kubicek, A. Redolfi, K. De Meyer, M. Jurczak, E. Augendre	2002	2
19	Limitations of shift-and-ratio based L/sub eff/ extraction techniques for MOS transistors with halo or pocket implants IEEE Electron Device Letters ·H. van Meer, K. Henson, Maddalena Pola, M. Rosmeulen, S. Kubicek, Nadine Collaert, K. De Meyer	2000	38
20	Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and dielectrics with oxide scaling Microelectronic Engineering ·A. Shanware, Hisham Z. Massoud, Eric M. Vogel, K. Henson, John R. Hauser, J. J. Wortman	1999	10

About K. Henson

K. Henson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Infectious Diseases, Organic Chemistry and Surgery, having authored 23 papers that have together received 279 indexed citations. Recurring topics across this work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Silicon and Solar Cell Technologies (9 papers), Semiconductor materials and interfaces (3 papers), 3D IC and TSV technologies (2 papers), Low-power high-performance VLSI design (1 paper) and Ferroelectric and Negative Capacitance Devices (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (275 citations), Atomic and Molecular Physics, and Optics (58 citations), Hardware and Architecture (3 citations), Electronic, Optical and Magnetic Materials (8 citations) and Materials Chemistry (19 citations). K. Henson has collaborated with scholars based in Belgium, United States and Netherlands. Frequent co-authors include K. De Meyer, Nadine Collaert, S. Biesemans, K.G. Anil, Richard Lindsay, A. Lauwers, B. Govoreanu, Jan Van Houdt, Pieter Blomme and R. Surdeanu. Their work appears in journals such as IEEE Electron Device Letters, Microelectronics Reliability, Japanese Journal of Applied Physics, Microelectronic Engineering and Solid-State Electronics.

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