T. Y. Hoffmann

671 total citations
32 papers, 339 citations indexed

About

T. Y. Hoffmann is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, T. Y. Hoffmann has authored 32 papers receiving a total of 339 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 3 papers in Electronic, Optical and Magnetic Materials and 3 papers in Biomedical Engineering. Recurrent topics in T. Y. Hoffmann's work include Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). T. Y. Hoffmann is often cited by papers focused on Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). T. Y. Hoffmann collaborates with scholars based in Belgium, United States and Japan. T. Y. Hoffmann's co-authors include G. Groeseneken, B. Kaczer, J. Franco, Ph. Roussel, Tibor Grasser, M. Toledano-Luque, T. Kauerauf, S. Biesemans, K. De Meyer and R. Degraeve and has published in prestigious journals such as IEEE Transactions on Electron Devices, Polymers and IEEE Electron Device Letters.

In The Last Decade

T. Y. Hoffmann

31 papers receiving 330 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Y. Hoffmann Belgium 10 318 47 30 24 11 32 339
Gianpietro Carnevale Italy 7 157 0.5× 42 0.9× 55 1.8× 28 1.2× 5 0.5× 16 187
R. Schreutelkamp Belgium 10 257 0.8× 39 0.8× 51 1.7× 41 1.7× 10 0.9× 31 276
R. Gafiteanu United States 6 340 1.1× 78 1.7× 58 1.9× 21 0.9× 6 0.5× 15 356
Victor Soler Spain 10 262 0.8× 30 0.6× 12 0.4× 36 1.5× 9 0.8× 24 287
P.A. McFarland United States 8 231 0.7× 85 1.8× 22 0.7× 26 1.1× 6 0.5× 19 262
Sungjae Lee United States 10 339 1.1× 51 1.1× 50 1.7× 26 1.1× 30 396
U. Haak Germany 7 126 0.4× 29 0.6× 53 1.8× 15 0.6× 11 1.0× 15 172
M. Paoli France 8 404 1.3× 28 0.6× 80 2.7× 23 1.0× 5 0.5× 17 416
Shujuan Mao China 9 197 0.6× 109 2.3× 37 1.2× 29 1.2× 5 0.5× 40 234
Jyi-Tsong Lin Taiwan 12 500 1.6× 22 0.5× 69 2.3× 37 1.5× 5 0.5× 124 517

Countries citing papers authored by T. Y. Hoffmann

Since Specialization
Citations

This map shows the geographic impact of T. Y. Hoffmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Y. Hoffmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Y. Hoffmann more than expected).

Fields of papers citing papers by T. Y. Hoffmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Y. Hoffmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Y. Hoffmann. The network helps show where T. Y. Hoffmann may publish in the future.

Co-authorship network of co-authors of T. Y. Hoffmann

This figure shows the co-authorship network connecting the top 25 collaborators of T. Y. Hoffmann. A scholar is included among the top collaborators of T. Y. Hoffmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Y. Hoffmann. T. Y. Hoffmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Eneman, Geert, Nadine Collaert, A. Veloso, et al.. (2012). On the efficiency of stress techniques in gate-last n-type bulk FinFETs. Solid-State Electronics. 74. 19–24. 7 indexed citations
3.
Bardon, M. Garcia, Stefan Cosemans, Philippe Roussel, et al.. (2011). Variability and technology aware SRAM Product yield maximization. Symposium on VLSI Technology. 222–223. 8 indexed citations
4.
Crupi, Felice, Massimo Alioto, J. Franco, et al.. (2011). Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 20(8). 1487–1495. 6 indexed citations
5.
Cho, Moonju, B. Kaczer, M. Aoulaiche, et al.. (2011). Interface Trap Characterization of a 5.8-$\hbox{\rm{ \AA}}$ EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique. IEEE Transactions on Electron Devices. 58(10). 3342–3349. 12 indexed citations
6.
Eneman, Geert, Nadine Collaert, A. Veloso, et al.. (2011). On the efficiency of stress techniques in gate-last N-type bulk FinFETs. 115–118. 4 indexed citations
7.
Cho, Moonju, A. Akheyar, M. Aoulaiche, et al.. (2011). Study of nitrogen impact on VFB–EOT roll-off by varying interfacial SiO2 thickness. Solid-State Electronics. 62(1). 67–71. 3 indexed citations
8.
Crupi, Felice, Massimo Alioto, J. Franco, et al.. (2011). Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 2249–2252. 1 indexed citations
9.
Mitard, Jérôme, Erik Rosseel, Geert Hellings, et al.. (2011). Analysis of dopant diffusion and defects in SiGe channel Quantum Well for Laser annealed device using an atomistic kinetic Monte Carlo approach. 810. 34.3.1–34.3.4. 6 indexed citations
10.
Degraeve, R., B. Kaczer, Naoto Horiguchi, et al.. (2010). Correlation Between the $V_{\rm th}$ Adjustment of nMOSFETs With HfSiO Gate Oxide and the Energy Profile of the Bulk Trap Density. IEEE Electron Device Letters. 31(4). 272–274. 7 indexed citations
11.
Cho, Moonju, M. Aoulaiche, R. Degraeve, et al.. (2010). Interface/Bulk Trap Recovery After Submelt Laser Anneal and the Impact to NBTI Reliability. IEEE Electron Device Letters. 31(6). 606–608. 3 indexed citations
12.
Hellings, Geert, Erik Rosseel, Eddy Simoen, et al.. (2010). Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing. Electrochemical and Solid-State Letters. 14(1). H39–H39. 29 indexed citations
13.
Cho, Moonju, M. Aoulaiche, R. Degraeve, et al.. (2010). Positive and negative bias temperature instability on sub-nanometer eot high-K MOSFETs. 1095–1098. 24 indexed citations
14.
15.
Ragnarsson, L.-Å., T. Schram, E. Röhr, et al.. (2009). Single-Metal Dual-Dielectric (SMDD) gate-first CMOS integration towards low V<inf>T</inf> and high performance. 49–50. 2 indexed citations
16.
Ragnarsson, Lars‐Åke, T. Schram, E. Röhr, et al.. (2009). Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization. 42 indexed citations
17.
González, Mireia Bargalló, Eddy Simoen, Erik Rosseel, et al.. (2008). Impact of Millisecond Laser Anneal on the Thermal Stress- Induced Defect Creation in Si1-xGex Source /Drain Junctions. ECS Transactions. 13(1). 23–30. 1 indexed citations
18.
Mertens, S., T. Y. Hoffmann, C. Vrancken, et al.. (2008). NI (PT) SI Thermal Stability Improvement by Carbon Implantation. ECS Transactions. 13(1). 397–404. 8 indexed citations
19.
Vandervorst, Wilfried, Susan B. Felch, C. Vrancken, et al.. (2007). Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach. 955–958. 18 indexed citations
20.
Severi, S., E. Augendre, C. Kerner, et al.. (2006). NMOS and PMOS Metal Gate Transistors with Junctions Activated by Laser Annealing. 1–2. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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