S. Shamuilia

475 total citations
16 papers, 389 citations indexed

About

S. Shamuilia is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Shamuilia has authored 16 papers receiving a total of 389 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Shamuilia's work include Semiconductor materials and devices (16 papers), Electronic and Structural Properties of Oxides (7 papers) and Semiconductor materials and interfaces (4 papers). S. Shamuilia is often cited by papers focused on Semiconductor materials and devices (16 papers), Electronic and Structural Properties of Oxides (7 papers) and Semiconductor materials and interfaces (4 papers). S. Shamuilia collaborates with scholars based in Belgium, Germany and United States. S. Shamuilia's co-authors include V. V. Afanas’ev, A. Stesmans, M. Badylevich, J. M. J. Lopes, J. Schubert, M. Roeckerath, D.P. Brunco, Darrell G. Schlom, A. Fissel and T. Heeg and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

S. Shamuilia

16 papers receiving 372 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Shamuilia Belgium	11	348	225	97	77	20	16	389
Hyeon-Seag Kim United States	4	420 1.2×	211 0.9×	52 0.5×	97 1.3×	17 0.8×	6	460
S. W. Huang United States	6	217 0.6×	362 1.6×	55 0.6×	61 0.8×	24 1.2×	8	377
L.B. La United States	7	399 1.1×	170 0.8×	42 0.4×	48 0.6×	10 0.5×	13	413
P. Sivasubramani United States	11	424 1.2×	245 1.1×	64 0.7×	63 0.8×	16 0.8×	26	445
K. P. Bastos Brazil	11	296 0.9×	143 0.6×	47 0.5×	44 0.6×	33 1.6×	29	336
Mohamed Issam Ziane Algeria	11	277 0.8×	288 1.3×	90 0.9×	75 1.0×	33 1.6×	28	375
E. Igumbor South Africa	11	254 0.7×	199 0.9×	38 0.4×	166 2.2×	31 1.6×	44	361
B. J. Sapjeta Germany	5	359 1.0×	198 0.9×	79 0.8×	55 0.7×	8 0.4×	5	383
F. M. Amanullah Saudi Arabia	8	287 0.8×	343 1.5×	84 0.9×	70 0.9×	43 2.1×	10	406
R. K. Hovsepyan Armenia	9	208 0.6×	211 0.9×	71 0.7×	89 1.2×	10 0.5×	48	313

Countries citing papers authored by S. Shamuilia

Since Specialization

Citations

This map shows the geographic impact of S. Shamuilia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Shamuilia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Shamuilia more than expected).

Fields of papers citing papers by S. Shamuilia

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Shamuilia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Shamuilia. The network helps show where S. Shamuilia may publish in the future.

Co-authorship network of co-authors of S. Shamuilia

This figure shows the co-authorship network connecting the top 25 collaborators of S. Shamuilia. A scholar is included among the top collaborators of S. Shamuilia based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Shamuilia. S. Shamuilia is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Shamuilia, S., A. Stesmans, Stephen A. Campbell, et al.. (2008). Photoconductivity of Hf-based binary metal oxides. Microelectronic Engineering. 85(12). 2400–2402. 2 indexed citations

Shamuilia, S., V. V. Afanas’ev, A. Stesmans, et al.. (2008). Photoconductivity of Hf-based binary metal oxide systems. Journal of Applied Physics. 104(11). 12 indexed citations

Badylevich, M., S. Shamuilia, V. V. Afanas’ev, et al.. (2008). Electronic structure of the interface of aluminum nitride with Si(100). Journal of Applied Physics. 104(9). 22 indexed citations

Shamuilia, S., V. V. Afanas’ev, A. Stesmans, T. Schram, & L. Pantisano. (2008). Internal photoemission of electrons from Ta-based conductors into SiO2 and HfO2 insulators. Journal of Applied Physics. 104(7). 5 indexed citations

Badylevich, M., S. Shamuilia, V. V. Afanas’ev, et al.. (2008). Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals. Microelectronic Engineering. 85(12). 2382–2384. 1 indexed citations

Afanas’ev, V. V., S. Shamuilia, M. Badylevich, et al.. (2007). Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3. Microelectronic Engineering. 84(9-10). 2278–2281. 35 indexed citations

Schram, T., L. Pantisano, A. Stesmans, et al.. (2007). Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks. Microelectronics Reliability. 47(4-5). 518–520. 3 indexed citations

Schram, T., L. Pantisano, Thierry Conard, et al.. (2007). Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface. Journal of Applied Physics. 101(3). 34503–34503. 17 indexed citations

Badylevich, M., S. Shamuilia, V. V. Afanas’ev, et al.. (2007). Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations. Applied Physics Letters. 90(25). 54 indexed citations

10.

Afanas’ev, V. V., S. Shamuilia, A. Stesmans, et al.. (2006). Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators. Applied Physics Letters. 88(13). 50 indexed citations

11.

Pantisano, L., T. Schram, J. G. Lisoni, et al.. (2006). Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients. Applied Physics Letters. 88(24). 42 indexed citations

12.

Lopes, J. M. J., M. Roeckerath, T. Heeg, et al.. (2006). Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric. Applied Physics Letters. 89(22). 71 indexed citations

13.

Ciobanu, Florin, Thomas Frank, Gerhard Pensl, et al.. (2006). Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO<sub>2</sub>-Interfaces. Materials science forum. 527-529. 991–994. 13 indexed citations

14.

Shamuilia, S., V. V. Afanas’ev, A. Stesmans, et al.. (2006). Internal photoemission of electrons at interfaces of metals with low-κ insulators. Applied Physics Letters. 89(20). 40 indexed citations

15.

Shamuilia, S., et al.. (2006). Strontium hafnate films deposited by physical vapor deposition. Thin Solid Films. 515(4). 2527–2530. 19 indexed citations

16.

Simoen, Eddy, Geert Eneman, S. Shamuilia, et al.. (2005). On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 108-109. 285–290. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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