J.L. Autran

751 total citations
42 papers, 558 citations indexed

About

J.L. Autran is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.L. Autran has authored 42 papers receiving a total of 558 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 7 papers in Hardware and Architecture and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.L. Autran's work include Semiconductor materials and devices (33 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Radiation Effects in Electronics (15 papers). J.L. Autran is often cited by papers focused on Semiconductor materials and devices (33 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Radiation Effects in Electronics (15 papers). J.L. Autran collaborates with scholars based in France, Belgium and Netherlands. J.L. Autran's co-authors include Daniela Munteanu, Michel Houssa, M. M. Heyns, A. Stesmans, Marc Bescond, M. Lannoo, Nicolas Cavassilas, Gilles Gasiot, P. Roche and S. Harrison and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J.L. Autran

41 papers receiving 537 citations

Peers

J.L. Autran

EEE

AMPO

P. Oldiges United States

S. Martinie France

James A. Felix United States

Kai Xi China

Richard S. Flores United States

K.L. Hughes United States

Kenichi Miyaguchi Japan

R. Sorge Germany

T. F. Wrobel United States

Mark C. Hakey United States

P. Oldiges United States

J.L. Autran

637 ×1.2

EEE

41 ×0.5

AMPO

51 ×0.7

76 ×1.2

50 ×0.9

Citations per year, relative to J.L. Autran J.L. Autran (= 1×) peers P. Oldiges

Countries citing papers authored by J.L. Autran

Since Specialization

Citations

This map shows the geographic impact of J.L. Autran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.L. Autran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.L. Autran more than expected).

Fields of papers citing papers by J.L. Autran

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.L. Autran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.L. Autran. The network helps show where J.L. Autran may publish in the future.

Co-authorship network of co-authors of J.L. Autran

This figure shows the co-authorship network connecting the top 25 collaborators of J.L. Autran. A scholar is included among the top collaborators of J.L. Autran based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.L. Autran. J.L. Autran is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wrobel, F., J.L. Autran, Paul Leroux, et al.. (2020). Reliability-driven pin assignment optimization to improve in-orbit soft-error rate. Microelectronics Reliability. 114. 113885–113885. 1 indexed citations

Wrobel, F., J.L. Autran, Paul Leroux, et al.. (2019). Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells. Microelectronics Reliability. 100-101. 113457–113457. 11 indexed citations

Munteanu, Daniela, et al.. (2019). Modelling and simulation of SEU in bulk Si and Ge SRAM. Microelectronics Reliability. 100-101. 113390–113390. 1 indexed citations

Autran, J.L., et al.. (2016). Real-time soft error rate measurements on bulk 40 nm SRAM memories: a five-year dual-site experiment. Semiconductor Science and Technology. 31(11). 114003–114003. 2 indexed citations

Pantel, Daniel, J.-R. Vaillé, F. Wrobel, et al.. (2012). Embedded silicon detector to investigate the natural radiative environment. Journal of Instrumentation. 7(5). P05007–P05007. 2 indexed citations

Semikh, S. S., et al.. (2012). The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation. IEEE Transactions on Nuclear Science. 59(2). 303–313. 11 indexed citations

Munteanu, Daniela, Mathieu Moreau, & J.L. Autran. (2011). Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel. Journal of Non-Crystalline Solids. 357(8-9). 1879–1883. 1 indexed citations

Munteanu, Daniela, J.L. Autran, Mathieu Moreau, & Michel Houssa. (2009). Electron transport through high-κ dielectric barriers: A non-equilibrium Green’s function (NEGF) study. Journal of Non-Crystalline Solids. 355(18-21). 1180–1184. 5 indexed citations

Autran, J.L., et al.. (2007). Altitude SEE Test European Platform (ASTEP) and First Results in CMOS 130 nm SRAM. IEEE Transactions on Nuclear Science. 54(4). 1002–1009. 22 indexed citations

10.

Munteanu, Daniela, et al.. (2007). Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits. Journal of Non-Crystalline Solids. 353(5-7). 639–644. 5 indexed citations

11.

Munteanu, Daniela, J.L. Autran, & S. Harrison. (2005). Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-permittivitty gate dielectrics. Journal of Non-Crystalline Solids. 351(21-23). 1911–1918. 29 indexed citations

12.

Houssa, Michel, M. Aoulaiche, J.L. Autran, et al.. (2004). Modeling negative bias temperature instabilities in hole channel metal–oxide–semiconductor field effect transistors with ultrathin gate oxide layers. Journal of Applied Physics. 95(5). 2786–2791. 13 indexed citations

13.

Houssa, Michel, Stefan De Gendt, J.L. Autran, G. Groeseneken, & Marc Heyns. (2004). Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors. Applied Physics Letters. 85(11). 2101–2103. 30 indexed citations

14.

Houssa, Michel, J.L. Autran, M. M. Heyns, & A. Stesmans. (2003). Model for defect generation at the (1 0 0)Si/SiO2 interface during electron injection in MOS structures. Applied Surface Science. 212-213. 749–752. 11 indexed citations

15.

Munteanu, Daniela, et al.. (2003). Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides. Journal of Non-Crystalline Solids. 322(1-3). 206–212. 2 indexed citations

16.

Houssa, Michel, et al.. (2003). Simulations of threshold voltage instabilities in HfySiOx and SiO2/HfySiOx-based field-effect transistors. Applied Physics Letters. 83(24). 5065–5067. 6 indexed citations

17.

Houssa, Michel, et al.. (2003). Model for negative bias temperature instability in p-MOSFETs with ultrathin oxynitride layers. Journal of Non-Crystalline Solids. 322(1-3). 100–104. 1 indexed citations

18.

Bidaud, M., et al.. (2001). 1.5–2.5 nm RTP gate oxides: process feasibility, properties and limitations. Journal of Non-Crystalline Solids. 280(1-3). 32–38. 2 indexed citations

19.

Masson, Pascal Le, J.L. Autran, & G. Ghibaudo. (2001). An improved time domain analysis of the charge pumping current. Journal of Non-Crystalline Solids. 280(1-3). 255–260. 9 indexed citations

20.

Autran, J.L., et al.. (1996). Annealing of Stress-Induced Interface and Border Traps in MOS Devices: A Charge-Pumping Study. 851–854. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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