E. Cartier

12.1k total citations · 3 hit papers
194 papers, 9.5k citations indexed

About

E. Cartier is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Surfaces, Coatings and Films. According to data from OpenAlex, E. Cartier has authored 194 papers receiving a total of 9.5k indexed citations (citations by other indexed papers that have themselves been cited), including 182 papers in Electrical and Electronic Engineering, 32 papers in Materials Chemistry and 23 papers in Surfaces, Coatings and Films. Recurrent topics in E. Cartier's work include Semiconductor materials and devices (171 papers), Advancements in Semiconductor Devices and Circuit Design (107 papers) and Integrated Circuits and Semiconductor Failure Analysis (72 papers). E. Cartier is often cited by papers focused on Semiconductor materials and devices (171 papers), Advancements in Semiconductor Devices and Circuit Design (107 papers) and Integrated Circuits and Semiconductor Failure Analysis (72 papers). E. Cartier collaborates with scholars based in United States, Belgium and Switzerland. E. Cartier's co-authors include D. J. DiMaria, D. Arnold, A. Kerber, J. H. Stathis, D. A. Buchanan, M. Copel, Massimo V. Fischetti, M. Gribelyuk, D. Neumayer and Deborah A. Neumayer and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

E. Cartier

193 papers receiving 9.1k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon

1993 589 citations D. J. DiMaria, E. Cartier et al. Journal of Applied Physics profile →
Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

2001 574 citations Massimo V. Fischetti, Deborah A. Neumayer et al. Journal of Applied Physics profile →
Mechanism for stress-induced leakage currents in thin silicon dioxide films

1995 445 citations D. J. DiMaria, E. Cartier Journal of Applied Physics profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
E. Cartier	8.6k	3.1k	1.3k	781	496	194	9.5k
E. A. Irene	4.6k 0.5×	2.7k 0.9×	1.3k 1.0×	540 0.7×	930 1.9×	215	5.8k
D. J. DiMaria	7.1k 0.8×	2.9k 0.9×	1.1k 0.8×	444 0.6×	543 1.1×	125	7.6k
V. V. Afanas’ev	7.7k 0.9×	5.2k 1.7×	2.1k 1.6×	1.2k 1.6×	471 0.9×	357	9.7k
H. Bender	5.9k 0.7×	2.8k 0.9×	2.5k 1.8×	970 1.2×	1.3k 2.7×	441	7.6k
Heiji Watanabe	4.2k 0.5×	1.6k 0.5×	1.0k 0.8×	799 1.0×	473 1.0×	369	4.9k
Shigeaki Zaima	4.0k 0.5×	1.9k 0.6×	2.1k 1.5×	355 0.5×	1.0k 2.1×	385	5.2k
F. A. Modine	2.4k 0.3×	2.2k 0.7×	883 0.7×	480 0.6×	883 1.8×	68	4.2k
V. A. Gritsenko	4.1k 0.5×	2.9k 0.9×	503 0.4×	411 0.5×	330 0.7×	255	4.8k
T. W. Sigmon	4.2k 0.5×	2.1k 0.7×	1.5k 1.1×	487 0.6×	603 1.2×	166	5.2k
J. Bruley	2.3k 0.3×	2.8k 0.9×	788 0.6×	355 0.5×	796 1.6×	136	4.4k

Countries citing papers authored by E. Cartier

Since Specialization

Citations

This map shows the geographic impact of E. Cartier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Cartier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Cartier more than expected).

Fields of papers citing papers by E. Cartier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Cartier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Cartier. The network helps show where E. Cartier may publish in the future.

Co-authorship network of co-authors of E. Cartier

This figure shows the co-authorship network connecting the top 25 collaborators of E. Cartier. A scholar is included among the top collaborators of E. Cartier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Cartier. E. Cartier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Stellari, Franco, Ernest Y. Wu, Takashi Ando, et al.. (2021). Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy. IEEE Electron Device Letters. 42(6). 828–831. 5 indexed citations

Consiglio, Steven, Hisashi Higuchi, Takashi Ando, et al.. (2021). Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO₂ for Analog In-Memory Computing Applications. ECS Transactions. 102(2). 19–28. 2 indexed citations

Kelty, Stephen P., Bruce Ravel, J. C. Woicik, et al.. (2021). Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis. Applied Physics Letters. 118(9). 10 indexed citations

Wu, Ernest Y., Takashi Ando, Young‐Seok Kim, et al.. (2020). A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications. Applied Physics Letters. 116(8). 4 indexed citations

Cartier, E., Wanki Kim, Nanbo Gong, et al.. (2019). Reliability Challenges with Materials for Analog Computing. 1–10. 11 indexed citations

Ando, Takashi, Pouya Hashemi, J. Bruley, et al.. (2017). High Mobility High-Ge-Content SiGe PMOSFETs Using Al₂O₃/HfO₂ Stacks With <italic>In-Situ</italic> O₃ Treatment. IEEE Electron Device Letters. 38(3). 303–305. 34 indexed citations

Cartier, E., A. Majumdar, Takashi Ando, et al.. (2017). Electron mobility in thin In0.53Ga0.47As channel.. European Solid-State Device Research Conference. 292–295. 2 indexed citations

Cartier, E., Takashi Ando, M. Hopstaken, et al.. (2013). Characterization and optimization of charge trapping in high-k dielectrics. 5A.2.1–5A.2.7. 9 indexed citations

Dubourdieu, Catherine, J. Bruley, Thomas M. Arruda, et al.. (2013). Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode. Nature Nanotechnology. 8(10). 748–754. 224 indexed citations

10.

Hopstaken, Marinus, J. Bruley, Dirk Pfeiffer, et al.. (2010). Oxygen Transport in High-k Metal Gate Stacks and Physical Characterization by SIMS Using Isotopic Labeled Oxygen. ECS Transactions. 28(1). 105–113. 6 indexed citations

11.

Kerber, A., E. Cartier, B.P. Linder, Siddarth Krishnan, & T. Nigam. (2009). TDDB failure distribution of metal gate/high-k CMOS devices on SOI substrates. 505–509. 35 indexed citations

12.

Kerber, A., E. Cartier, R. Degraeve, et al.. (2003). Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes. Microelectronic Engineering. 50(5). 1261–1269. 46 indexed citations

13.

Kerber, A., E. Cartier, R. Degraeve, et al.. (2003). Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes. IEEE Transactions on Electron Devices. 50(5). 1261–1269. 60 indexed citations

14.

Shang, Huiling, Marvin H. White, K.W. Guarini, et al.. (2001). Interface studies of tungsten gate metal–oxide–silicon capacitors. Applied Physics Letters. 78(20). 3139–3141. 21 indexed citations

15.

Fischetti, Massimo V., Deborah A. Neumayer, & E. Cartier. (2001). Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering. Journal of Applied Physics. 90(9). 4587–4608. 574 indexed citations breakdown →

16.

Uren, Michael J., et al.. (1998). Interface State Capture Cross Section Measurements on Vacuum Annealed and Radiation Damaged Si : SiO2 Surfaces. Journal of The Electrochemical Society. 145(2). 683–689. 11 indexed citations

17.

Cartier, E., D. A. Buchanan, & G.J. Dunn. (1994). Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon. Applied Physics Letters. 64(7). 901–903. 63 indexed citations

18.

Arnold, D., E. Cartier, & D. J. DiMaria. (1992). Acoustic-phonon runaway and impact ionization by hot electrons in silicon dioxide. Physical review. B, Condensed matter. 45(3). 1477–1480. 88 indexed citations

19.

Cartier, E., et al.. (1991). <title>Monte Carlo calculations of laser-induced free-electron heating in SiO<formula><inf><roman>2</roman></inf></formula></title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1441. 478–487. 1 indexed citations

20.

Cartier, E., F. Heinrich, P. Pfluger, & H.‐J. Güntherodt. (1981). Positron Annihilation in Graphite Intercalation Compounds. Physical Review Letters. 46(4). 272–275. 36 indexed citations

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