A. Kerber

3.4k total citations
111 papers, 2.7k citations indexed

About

A. Kerber is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, A. Kerber has authored 111 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 109 papers in Electrical and Electronic Engineering, 11 papers in Electronic, Optical and Magnetic Materials and 10 papers in Materials Chemistry. Recurrent topics in A. Kerber's work include Semiconductor materials and devices (104 papers), Advancements in Semiconductor Devices and Circuit Design (92 papers) and Integrated Circuits and Semiconductor Failure Analysis (59 papers). A. Kerber is often cited by papers focused on Semiconductor materials and devices (104 papers), Advancements in Semiconductor Devices and Circuit Design (92 papers) and Integrated Circuits and Semiconductor Failure Analysis (59 papers). A. Kerber collaborates with scholars based in United States, Belgium and Germany. A. Kerber's co-authors include E. Cartier, L. Pantisano, G. Groeseneken, R. Degraeve, T. Nigam, Udo Schwalke, H.E. Maes, T. Kauerauf, M. Kerber and Siddarth Krishnan and has published in prestigious journals such as Journal of Geophysical Research Atmospheres, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Kerber

109 papers receiving 2.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Kerber United States 28 2.6k 289 149 135 63 111 2.7k
Kenji Ohmori Japan 17 754 0.3× 287 1.0× 35 0.2× 191 1.4× 206 3.3× 84 967
Elliott Philofsky United States 12 322 0.1× 139 0.5× 115 0.8× 97 0.7× 57 0.9× 20 489
Wolfgang Gustin Germany 18 1.5k 0.6× 133 0.5× 25 0.2× 102 0.8× 23 0.4× 61 1.5k
J. D. McBrayer United States 7 474 0.2× 104 0.4× 273 1.8× 123 0.9× 49 0.8× 19 574
K. Asai Japan 12 399 0.2× 115 0.4× 39 0.3× 180 1.3× 31 0.5× 47 517
Kazunori Nagahata Japan 15 456 0.2× 118 0.4× 162 1.1× 22 0.2× 31 0.5× 26 497
Abdelatif Jaouad Canada 16 702 0.3× 167 0.6× 67 0.4× 284 2.1× 184 2.9× 90 834
Jiangwei Cao China 16 248 0.1× 203 0.7× 488 3.3× 639 4.7× 84 1.3× 89 840
S. Senkader United Kingdom 13 485 0.2× 303 1.0× 44 0.3× 177 1.3× 115 1.8× 30 566
S. Kerdilès France 14 707 0.3× 283 1.0× 37 0.2× 320 2.4× 115 1.8× 77 795

Countries citing papers authored by A. Kerber

Since Specialization
Citations

This map shows the geographic impact of A. Kerber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Kerber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Kerber more than expected).

Fields of papers citing papers by A. Kerber

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Kerber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Kerber. The network helps show where A. Kerber may publish in the future.

Co-authorship network of co-authors of A. Kerber

This figure shows the co-authorship network connecting the top 25 collaborators of A. Kerber. A scholar is included among the top collaborators of A. Kerber based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Kerber. A. Kerber is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kerber, A., et al.. (2020). Reliability Characterization of Ring Oscillator Circuits for Advanced CMOS Technologies. IEEE Transactions on Device and Materials Reliability. 20(2). 230–241. 14 indexed citations
2.
Kerber, A., et al.. (2019). Determination of DC equivalent hot carrier stress times in scaled CMOS devices using novel AC stress methodology. Microelectronics Reliability. 93. 98–101. 6 indexed citations
3.
Mahapatra, Souvik, Kevin J. Chen, B. Kaczer, et al.. (2019). Special Issue on Reliability. IEEE Transactions on Electron Devices. 66(11). 4497–4503.
4.
Chbili, Z., A. Kerber, S. Cimino, et al.. (2019). Self-Heating Effects on Hot Carrier Degradation and Its Impact on Logic Circuit Reliability. IEEE Transactions on Device and Materials Reliability. 19(2). 249–254. 16 indexed citations
5.
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7.
Kerber, A., P. Srinivasan, S. Cimino, et al.. (2017). Device reliability metric for end-of-life performance optimization based on circuit level assessment. 2D–3.1. 25 indexed citations
8.
Kerber, A. & P. Srinivasan. (2014). Impact of Stress Mode on Stochastic BTI in Scaled MG/HK CMOS Devices. IEEE Electron Device Letters. 35(4). 431–433. 8 indexed citations
9.
Srinivasan, P., Jody Fronheiser, Kerem Akarvardar, et al.. (2014). SiGe composition and thickness effects on NBTI in replacement metal gate / high-κ technologies. 6A.3.1–6A.3.6. 18 indexed citations
10.
Zafar, Sufi, A. Kerber, & R. Muralidhar. (2014). Physics based PBTI model for accelerated estimation of 10 year lifetime. 1–2. 4 indexed citations
11.
Cartier, E., Takashi Ando, M. Hopstaken, et al.. (2013). Characterization and optimization of charge trapping in high-k dielectrics. 5A.2.1–5A.2.7. 9 indexed citations
12.
Stadler, Wolfgang, et al.. (2006). Ultra-thin gate oxide reliability in the ESD time domain. Electrical Overstress/Electrostatic Discharge Symposium. 285–294. 34 indexed citations
13.
Pompl, T., et al.. (2006). Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. Microelectronics Reliability. 46(9-11). 1603–1607. 10 indexed citations
14.
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Kerber, A., L.-Å. Ragnarsson, M. Rosmeulen, et al.. (2004). Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics. 159–160. 24 indexed citations
16.
Pantisano, L., E. Cartier, A. Kerber, et al.. (2004). Dynamics of threshold voltage instability in stacked high-k dielectrics: role of the interfacial oxide. 163–164. 17 indexed citations
17.
Kerber, A., E. Cartier, R. Degraeve, et al.. (2003). Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes. Microelectronic Engineering. 50(5). 1261–1269. 46 indexed citations
18.
Cartier, E., L. Pantisano, A. Kerber, & G. Groeseneken. (2003). Correlation between charge Injection and trapping in SiO2/HfO2 gate stacks. 2 indexed citations
19.
Young, Chadwin D., A. Kerber, Tuo‐Hung Hou, et al.. (2003). Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. 347–359. 6 indexed citations
20.
Kerber, A., E. Cartier, R. Degraeve, et al.. (2002). Charge trapping and dielectric reliability in alternative gate dielectrics: a key challenge for integration. 45–52. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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