A. Kerber

3.4k citations

111 papers · 2.7k indexed · h-index 28

Impact in

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Electrostatic Discharge in Electronics
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in ⓘ

Electrical and Electronic Engineering 109
- Semiconductor materials and devices 104
- Advancements in Semiconductor Devices and Circuit Design 92
- Integrated Circuits and Semiconductor Failure Analysis 59
- Ferroelectric and Negative Capacitance Devices 18
- Electrostatic Discharge in Electronics 7
- Silicon Carbide Semiconductor Technologies 6
Electronic, Optical and Magnetic Materials 11
- Copper Interconnects and Reliability 11

Co-authors: E. Cartier (47 shared papers)L. Pantisano (30 shared papers)G. Groeseneken (28 shared papers)R. Degraeve (20 shared papers)T. Nigam (19 shared papers)Udo Schwalke (7 shared papers)H.E. Maes (6 shared papers)T. Kauerauf (7 shared papers)
Journals: IEEE Electron Device Letters (11 papers)IEEE Transactions on Electron Devices (6 papers)Microelectronics Reliability (6 papers)IEEE Transactions on Device and Materials Reliability (4 papers)Applied Physics Letters (2 papers)
Partner nations: United States Belgium Germany

In The Last Decade

A. Kerber

109 papers receiving 2.6k citations

Peers

Countries citing papers authored by A. Kerber

Since Specialization

Citations

This map shows the geographic impact of A. Kerber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Kerber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Kerber more than expected).

Fields of papers citing papers by A. Kerber

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Kerber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Kerber. The network helps show where A. Kerber may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Kerber, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Kerber Line = papers co-authored together A. Kerber links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 111 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics IEEE Electron Device Letters ·A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, Tuo‐Hung Hou, G. Groeseneken, H.E. Maes, Udo Schwalke	2003	294
2	Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks IEEE Transactions on Device and Materials Reliability ·A. Kerber, E. Cartier	2009	152
3	Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks Applied Physics Letters ·R. J. Carter, E. Cartier, A. Kerber, L. Pantisano, T. Schram, Stefan De Gendt, Marc Heyns	2003	104
4	Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks T. Nigam, A. Kerber, Peter Peumans	2009	95
5	On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices IEEE Electron Device Letters ·Jörgen Westlinder, T. Schram, L. Pantisano, E. Cartier, A. Kerber, G.S. Lujan, Jörgen Olsson, G. Groeseneken	2003	92
6	Stress-induced leakage current and defect generation in nFETs with HfO<inf>2</inf>/TiN gate stacks during positive-bias temperature stress E. Cartier, A. Kerber	2009	82
7	Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics A. Kerber, E. Cartier, L. Pantisano, M. Rosmeulen, R. Degraeve, T. Kauerauf, G. Groeseneken, H.E. Maes, Udo Schwalke	2003	79
8	Reliability screening of high-k dielectrics based on voltage ramp stress Microelectronics Reliability ·A. Kerber, L. Pantisano, A. Veloso, G. Groeseneken, M. Kerber	2007	74
9	Fundamental aspects of HfO<inf>2</inf>-based high-k metal gate stack reliability and implications on t<inf>inv</inf>-scaling E. Cartier, A. Kerber, Takashi Ando, Martin M. Frank, Kwang‐Il Choi, Siddarth Krishnan, B.P. Linder, Kai Zhao, F. Monsieur, J. H. Stathis, Vijay Narayanan	2011	66
10	Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With $\hbox{HfO}_{2}/\hbox{TiN}$ Gate Stacks IEEE Transactions on Electron Devices ·A. Kerber, K. Maitra, Amlan Majumdar, Mike Hargrove, Rick J. Carter, E. Cartier	2008	64
11	Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- $k$ Stacks IEEE Electron Device Letters ·A. Kerber, Siddarth Krishnan, E. Cartier	2009	63
12	Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/ bulk trap density in a SiO/sub 2//HfO/sub 2/ stack Felice Crupi, R. Degraeve, A. Kerber, D.H. Kwak, G. Groeseneken	2004	63
13	Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes IEEE Transactions on Electron Devices ·A. Kerber, E. Cartier, R. Degraeve, Ph. Roussel, L. Pantisano, T. Kauerauf, G. Groeseneken, H.E. Maes, Udo Schwalke	2003	60
14	Understanding mobility mechanisms in extremely scaled HfO<inf>2</inf> (EOT 0.42 nm) using remote interfacial layer scavenging technique and V<inf>t</inf>-tuning dipoles with gate-first process Takashi Ando, Martin M. Frank, Kwang‐Il Choi, Changhwan Choi, J. Bruley, Marinus Hopstaken, M. Copel, E. Cartier, A. Kerber, Agnese Callegari, D. Lacey, S. Brown, Qingyun Yang, Vijay Narayanan	2009	57
15	Challenges in the characterization and modeling of BTI induced variability in metal gate / High-k CMOS technologies A. Kerber, T. Nigam	2013	51
16	A Study of Relaxation Current in High-<tex>$kappa$</tex>Dielectric Stacks IEEE Transactions on Electron Devices ·Zhen Xu, L. Pantisano, A. Kerber, R. Degraeve, E. Cartier, S. DeGendt, Marc Heyns, G. Groeseneken	2004	49
17	Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics TUbilio (Technical University of Darmstadt) ·A. Kerber, E. Cartier, L. Pantisano, M. Rosmeulen, R. Degraeve, T. Kauerauf, G. Groeseneken, H.E. Maes, Udo Schwalke	2003	49
18	Universality of NBTI - From devices to circuits and products Souvik Mahapatra, V. Huard, A. Kerber, V. Reddy, S. Kalpat, A. Haggag	2014	47
19	Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes Microelectronic Engineering ·A. Kerber, E. Cartier, R. Degraeve, Philippe Roussel, L. Pantisano, T. Kauerauf, G. Groeseneken, H.E. Maes, Udo Schwalke	2003	46
20	Effect of bulk trap density on HfO/sub 2/ reliability and yield R. Degraeve, A. Kerber, P. Roussell, E. Cartier, T. Kauerauf, L. Pantisano, G. Groeseneken	2004	37

About A. Kerber

A. Kerber is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Hardware and Architecture, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 111 papers that have together received 2.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (104 papers), Advancements in Semiconductor Devices and Circuit Design (92 papers), Integrated Circuits and Semiconductor Failure Analysis (59 papers), Ferroelectric and Negative Capacitance Devices (18 papers), Copper Interconnects and Reliability (11 papers), Electrostatic Discharge in Electronics (7 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Electronic and Structural Properties of Oxides (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.6k citations), Electronic, Optical and Magnetic Materials (149 citations), Materials Chemistry (289 citations), Atomic and Molecular Physics, and Optics (135 citations) and Hardware and Architecture (27 citations). A. Kerber has collaborated with scholars based in United States, Belgium and Germany. Frequent co-authors include E. Cartier, L. Pantisano, G. Groeseneken, R. Degraeve, T. Nigam, Udo Schwalke, H.E. Maes, T. Kauerauf, M. Kerber and Siddarth Krishnan. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Microelectronics Reliability, IEEE Transactions on Device and Materials Reliability and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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