A. Stesmans

2.0k total citations
62 papers, 1.6k citations indexed

About

A. Stesmans is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Stesmans has authored 62 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 41 papers in Materials Chemistry and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Stesmans's work include Semiconductor materials and devices (52 papers), Electronic and Structural Properties of Oxides (20 papers) and Thin-Film Transistor Technologies (15 papers). A. Stesmans is often cited by papers focused on Semiconductor materials and devices (52 papers), Electronic and Structural Properties of Oxides (20 papers) and Thin-Film Transistor Technologies (15 papers). A. Stesmans collaborates with scholars based in Belgium, United States and Germany. A. Stesmans's co-authors include V. V. Afanas’ev, Michel Houssa, V. V. Afanas’ev, G. Pourtois, M. M. Heyns, Joe Wong, Dieter Pierreux, Ryan C. Smith, S.A. Campbell and Darrell G. Schlom and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

A. Stesmans

61 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Stesmans Belgium 21 1.2k 959 431 188 113 62 1.6k
A. Stesmans Belgium 22 1.4k 1.2× 1.1k 1.1× 344 0.8× 194 1.0× 103 0.9× 62 1.7k
Robert E. Stahlbush United States 29 2.5k 2.1× 482 0.5× 557 1.3× 312 1.7× 169 1.5× 143 2.7k
Noriyuki Miyata Japan 23 1.7k 1.4× 752 0.8× 487 1.1× 119 0.6× 223 2.0× 116 1.9k
Daxing Han United States 17 1.2k 1.0× 1.2k 1.3× 182 0.4× 56 0.3× 166 1.5× 91 1.5k
G.J. Adriaenssens Belgium 18 824 0.7× 745 0.8× 167 0.4× 82 0.4× 99 0.9× 72 1.2k
Fredrik Owman Sweden 14 767 0.6× 479 0.5× 379 0.9× 212 1.1× 83 0.7× 15 1.1k
A. Ellison Sweden 17 979 0.8× 231 0.2× 328 0.8× 242 1.3× 86 0.8× 30 1.2k
Kazuyuki Ueda Japan 17 481 0.4× 551 0.6× 628 1.5× 82 0.4× 164 1.5× 133 1.2k
N. A. Economou Greece 19 937 0.8× 965 1.0× 242 0.6× 127 0.7× 107 0.9× 75 1.3k
C. Klimm Germany 16 476 0.4× 616 0.6× 120 0.3× 151 0.8× 176 1.6× 52 865

Countries citing papers authored by A. Stesmans

Since Specialization
Citations

This map shows the geographic impact of A. Stesmans's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Stesmans with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Stesmans more than expected).

Fields of papers citing papers by A. Stesmans

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Stesmans. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Stesmans. The network helps show where A. Stesmans may publish in the future.

Co-authorship network of co-authors of A. Stesmans

This figure shows the co-authorship network connecting the top 25 collaborators of A. Stesmans. A scholar is included among the top collaborators of A. Stesmans based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Stesmans. A. Stesmans is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
O’Connor, Eileen, Aileen O׳Mahony, Ian M. Povey, et al.. (2016). Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3. Journal of Applied Physics. 120(23). 5 indexed citations
2.
Afanas’ev, V. V., et al.. (2014). Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging. physica status solidi (b). 251(11). 2193–2196. 2 indexed citations
3.
Houssa, Michel, et al.. (2011). Universal stress-defect correlation at (100)semiconductor/oxide interfaces. Applied Physics Letters. 98(14). 7 indexed citations
4.
Houssa, Michel, Geoffrey Pourtois, M. M. Heyns, V. V. Afanas’ev, & A. Stesmans. (2010). Electronic Properties of Silicene: Insights from First-Principles Modeling. Journal of The Electrochemical Society. 158(2). H107–H107. 37 indexed citations
5.
Houssa, Michel, G. Pourtois, V. V. Afanas’ev, & A. Stesmans. (2010). Electronic properties of two-dimensional hexagonal germanium. Applied Physics Letters. 96(8). 109 indexed citations
6.
Afanas’ev, V. V., Michel Houssa, A. Stesmans, et al.. (2009). Electronic properties of Ge dangling bond centers at Si1−xGex/SiO2 interfaces. Applied Physics Letters. 95(22). 14 indexed citations
7.
Afanas’ev, V. V., M. Badylevich, A. Stesmans, et al.. (2009). Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3. Applied Physics Letters. 95(10). 7 indexed citations
8.
Afanas’ev, V. V., A. Stesmans, Laurent Souriau, Roger Loo, & Marc Meuris. (2009). Valence band energy in confined Si1−xGex (0.28<x<0.93) layers. Applied Physics Letters. 94(17). 15 indexed citations
9.
Afanas’ev, V. V., A. Stesmans, G. Mavrou, & A. Dimoulas. (2008). Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers. Applied Physics Letters. 93(10). 14 indexed citations
10.
Magruder, R.H., A. Stesmans, K. Clémer, R. A. Weeks, & Robert A. Weller. (2008). The effect of implanting nitrogen on the optical absorption and electron paramagnetic resonance spectra of silica. Journal of Non-Crystalline Solids. 354(30). 3580–3585.
11.
Zhao, Chao, T. Witters, Bert Brijs, et al.. (2005). Ternary rare-earth metal oxide high-k layers on silicon oxide. Applied Physics Letters. 86(13). 115 indexed citations
12.
Stesmans, A. & V. V. Afanas’ev. (2003). Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance. Applied Physics Letters. 82(17). 2835–2837. 20 indexed citations
13.
Stesmans, A., Dieter Pierreux, R. J. Jaccodine, Minn‐Tsong Lin, & T. J. Delph. (2003). Influence of in situ applied stress during thermal oxidation of (111)Si on Pb interface defects. Applied Physics Letters. 82(18). 3038–3040. 30 indexed citations
14.
Pierreux, Dieter & A. Stesmans. (2003). Atomic structure of theB3defect in neutron-irradiated silicon. Physical review. B, Condensed matter. 68(19). 7 indexed citations
15.
Афанасьев, В. В., Michel Houssa, A. Stesmans, G.J. Adriaenssens, & M. M. Heyns. (2002). Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si. Journal of Non-Crystalline Solids. 303(1). 69–77. 21 indexed citations
16.
Stesmans, A. & V. V. Afanas’ev. (2002). Defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2 probed by electron spin resonance. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(4). 1720–1725. 8 indexed citations
17.
Afanas’ev, V. V. & A. Stesmans. (2001). Hydrogen release related to hole injection into SiO2 layers on Si. Materials Science in Semiconductor Processing. 4(1-3). 149–151. 7 indexed citations
18.
Houssa, Michel, V. V. Afanas’ev, A. Stesmans, & M. M. Heyns. (2001). Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks. Applied Physics Letters. 79(19). 3134–3136. 31 indexed citations
19.
Афанасьев, В. В. & A. Stesmans. (1997). Analysis of near-interfacial SiO2 traps using photon stimulated electron tunneling. Microelectronic Engineering. 36(1-4). 149–152. 12 indexed citations
20.
Vanheusden, K., A. Stesmans, & V. V. Afanas’ev. (1995). Hydrogen-annealing induced positive charge in buried oxides: correspondence between ESR and C-V results. Journal of Non-Crystalline Solids. 187. 253–256. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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