A. Stesmans

2.0k citations

62 papers · 1.6k indexed · h-index 21

Electrical and Electronic Engineering top 5%
Materials Chemistry top 5%
Atomic and Molecular Physics, and Optics top 5%
Electronic, Optical and Magnetic Materials top 10%
Biomedical Engineering

Co-authors: V. V. Afanas’ev Michel Houssa G. Pourtois M. M. Heyns Joe Wong Dieter Pierreux Ryan C. Smith S.A. Campbell
Topics: Semiconductor materials and devices (52 papers)Electronic and Structural Properties of Oxides (20 papers)Thin-Film Transistor Technologies (15 papers)
Cited by: Materials Chemistry Electrical and Electronic Engineering Ceramics and Composites
Journals: Physical Review Letters Physical review. B, Condensed matter Applied Physics Letters
Partner nations: Belgium United States Germany

In The Last Decade

A. Stesmans

61 papers receiving 1.6k citations

Peers

Countries citing papers authored by A. Stesmans

Since Specialization

Citations

This map shows the geographic impact of A. Stesmans's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Stesmans with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Stesmans more than expected).

Fields of papers citing papers by A. Stesmans

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Stesmans. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Stesmans. The network helps show where A. Stesmans may publish in the future.

Co-authorship network of co-authors of A. Stesmans

This figure shows the co-authorship network connecting the top 25 collaborators of A. Stesmans. A scholar is included among the top collaborators of A. Stesmans based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Stesmans. A. Stesmans is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3 2016 ·Journal of Applied Physics ·(unknown),Eileen O’Connor,Aileen O׳Mahony,Ian M. Povey,Paul K. Hurley,Dong Lin,P. D. Ye,V. V. Afanas’ev,Michel Houssa,A. Stesmans	5
2	Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging 2014 ·physica status solidi (b) ·(unknown),(unknown),(unknown),V. V. Afanas’ev,A. Stesmans	2
3	Universal stress-defect correlation at (100)semiconductor/oxide interfaces 2011 ·Applied Physics Letters ·Michel Houssa,(unknown),G. Pourtois,V. V. Afanas’ev,A. Stesmans	7
4	Electronic Properties of Silicene: Insights from First-Principles Modeling 2010 ·Journal of The Electrochemical Society ·Michel Houssa,Geoffrey Pourtois,M. M. Heyns,V. V. Afanas’ev,A. Stesmans	37
5	Electronic properties of two-dimensional hexagonal germanium 2010 ·Applied Physics Letters ·Michel Houssa,G. Pourtois,V. V. Afanas’ev,A. Stesmans	109
6	Electronic properties of Ge dangling bond centers at Si1−xGex/SiO2 interfaces 2009 ·Applied Physics Letters ·V. V. Afanas’ev,Michel Houssa,A. Stesmans,Laurent Souriau,Roger Loo,M. Meuris	14
7	Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3 2009 ·Applied Physics Letters ·V. V. Afanas’ev,M. Badylevich,A. Stesmans,Apurba Laha,H. J. Osten,A. Fissel	7
8	Valence band energy in confined Si1−xGex (0.28<x<0.93) layers 2009 ·Applied Physics Letters ·V. V. Afanas’ev,A. Stesmans,Laurent Souriau,Roger Loo,Marc Meuris	15
9	Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers 2008 ·Applied Physics Letters ·V. V. Afanas’ev,A. Stesmans,G. Mavrou,A. Dimoulas	14
10	The effect of implanting nitrogen on the optical absorption and electron paramagnetic resonance spectra of silica 2008 ·Journal of Non-Crystalline Solids ·R.H. Magruder,A. Stesmans,K. Clémer,R. A. Weeks,Robert A. Weller	0
11	Ternary rare-earth metal oxide high-k layers on silicon oxide 2005 ·Applied Physics Letters ·Chao Zhao,T. Witters,Bert Brijs,H. Bender,Olivier Richard,Matty Caymax,T. Heeg,J. Schubert,V. V. Afanas’ev,A. Stesmans,Darrell G. Schlom	115
12	Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance 2003 ·Applied Physics Letters ·A. Stesmans,V. V. Afanas’ev	20
13	Influence of in situ applied stress during thermal oxidation of (111)Si on Pb interface defects 2003 ·Applied Physics Letters ·A. Stesmans,Dieter Pierreux,R. J. Jaccodine,Minn‐Tsong Lin,T. J. Delph	30
14	Atomic structure of theB3defect in neutron-irradiated silicon 2003 ·Physical review. B, Condensed matter ·Dieter Pierreux,A. Stesmans	7
15	Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si 2002 ·Journal of Non-Crystalline Solids ·В. В. Афанасьев,Michel Houssa,A. Stesmans,G.J. Adriaenssens,M. M. Heyns	21
16	Defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2 probed by electron spin resonance 2002 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Stesmans,V. V. Afanas’ev	8
17	Hydrogen release related to hole injection into SiO2 layers on Si 2001 ·Materials Science in Semiconductor Processing ·V. V. Afanas’ev,A. Stesmans	7
18	Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks 2001 ·Applied Physics Letters ·Michel Houssa,V. V. Afanas’ev,A. Stesmans,M. M. Heyns	31
19	Analysis of near-interfacial SiO2 traps using photon stimulated electron tunneling 1997 ·Microelectronic Engineering ·В. В. Афанасьев,A. Stesmans	12
20	Hydrogen-annealing induced positive charge in buried oxides: correspondence between ESR and C-V results 1995 ·Journal of Non-Crystalline Solids ·K. Vanheusden,A. Stesmans,V. V. Afanas’ev	4

About A. Stesmans

A. Stesmans is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 62 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (52 papers), Electronic and Structural Properties of Oxides (20 papers) and Thin-Film Transistor Technologies (15 papers). The work is most often cited by research in Materials Chemistry (959 citations), Electrical and Electronic Engineering (1.2k citations) and Ceramics and Composites (100 citations). A. Stesmans has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include V. V. Afanas’ev, Michel Houssa, V. V. Afanas’ev, G. Pourtois, M. M. Heyns, Joe Wong, Dieter Pierreux, Ryan C. Smith, S.A. Campbell and Darrell G. Schlom. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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