M. M. Heyns

3.2k total citations
75 papers, 2.6k citations indexed

About

M. M. Heyns is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. M. Heyns has authored 75 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. M. Heyns's work include Semiconductor materials and devices (61 papers), Advancements in Semiconductor Devices and Circuit Design (36 papers) and Electronic and Structural Properties of Oxides (14 papers). M. M. Heyns is often cited by papers focused on Semiconductor materials and devices (61 papers), Advancements in Semiconductor Devices and Circuit Design (36 papers) and Electronic and Structural Properties of Oxides (14 papers). M. M. Heyns collaborates with scholars based in Belgium, United States and France. M. M. Heyns's co-authors include Michel Houssa, A. Stesmans, V. V. Afanas’ev, V. V. Afanas’ev, M. Naili, Paul Mertens, A. Stesmans, A. Stesmans, Marc Meuris and T. Nigam and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

M. M. Heyns

73 papers receiving 2.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. M. Heyns Belgium 29 2.3k 1.0k 635 253 184 75 2.6k
Marc Schaekers Belgium 26 1.7k 0.7× 676 0.7× 734 1.2× 252 1.0× 305 1.7× 124 2.1k
H.J. Hovel United States 23 1.5k 0.7× 771 0.7× 638 1.0× 220 0.9× 121 0.7× 85 1.9k
G. Contreras‐Puente Mexico 29 2.1k 0.9× 2.1k 2.1× 430 0.7× 209 0.8× 170 0.9× 165 2.6k
А. К. Гутаковский Russia 21 1.3k 0.5× 986 1.0× 1.1k 1.7× 354 1.4× 154 0.8× 219 2.0k
T. Sorsch United States 17 1.7k 0.7× 758 0.7× 271 0.4× 266 1.1× 176 1.0× 45 1.9k
B. Brooks United States 10 1.9k 0.8× 1.5k 1.5× 409 0.6× 273 1.1× 110 0.6× 13 2.2k
D. Gräf Germany 16 802 0.3× 532 0.5× 341 0.5× 232 0.9× 141 0.8× 45 1.2k
G.H. Bauer Germany 24 1.7k 0.7× 1.4k 1.3× 381 0.6× 214 0.8× 77 0.4× 169 2.0k
S. Jay Chey United States 20 3.3k 1.4× 3.2k 3.1× 686 1.1× 120 0.5× 106 0.6× 40 3.8k
Tobias Kipp Germany 22 1.1k 0.5× 1.1k 1.1× 747 1.2× 542 2.1× 241 1.3× 77 2.0k

Countries citing papers authored by M. M. Heyns

Since Specialization
Citations

This map shows the geographic impact of M. M. Heyns's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. M. Heyns with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. M. Heyns more than expected).

Fields of papers citing papers by M. M. Heyns

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. M. Heyns. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. M. Heyns. The network helps show where M. M. Heyns may publish in the future.

Co-authorship network of co-authors of M. M. Heyns

This figure shows the co-authorship network connecting the top 25 collaborators of M. M. Heyns. A scholar is included among the top collaborators of M. M. Heyns based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. M. Heyns. M. M. Heyns is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Franco, J., et al.. (2020). Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies. Journal of Applied Physics. 128(10). 4 indexed citations
2.
Jiang, Shidong, Clément Merckling, Alain Moussa, et al.. (2015). Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. ECS Journal of Solid State Science and Technology. 4(7). N83–N87. 3 indexed citations
3.
Leonelli, Daniele, A. Vandooren, R. Rooyackers, et al.. (2010). Optimization of tunnel FETs: Impact of gate oxide thickness, implantation and annealing conditions. 170–173. 21 indexed citations
4.
Houssa, Michel, Geoffrey Pourtois, M. M. Heyns, V. V. Afanas’ev, & A. Stesmans. (2010). Electronic Properties of Silicene: Insights from First-Principles Modeling. Journal of The Electrochemical Society. 158(2). H107–H107. 37 indexed citations
5.
Leonelli, Daniele, A. Vandooren, R. Rooyackers, et al.. (2010). Drive Current Improvement in Si Tunnel Field Effect Transistors by means of Silicide Engineering. 5 indexed citations
6.
Yang, Lijun, et al.. (2009). Ge-H empirical potential and simulation of Si epitaxy on Ge(100) by chemical vapor deposition fromSiH4. Physical Review B. 79(16). 4 indexed citations
7.
O’Connor, Eileen, Scott Monaghan, R. D. Long, et al.. (2009). Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods. Applied Physics Letters. 94(10). 87 indexed citations
8.
Leonelli, Daniele, A. Vandooren, R. Rooyackers, et al.. (2009). Multiple-Gate Tunneling Field Effect Transistors with sub-60mV/dec Subthreshold Slope. 13 indexed citations
9.
Houssa, Michel, G. Pourtois, Matty Caymax, Marc Meuris, & M. M. Heyns. (2008). Electronic properties of (100)Ge/Ge(Hf)O2 interfaces: A first-principles study. Surface Science. 602(4). L25–L28. 33 indexed citations
10.
Houssa, Michel, Daniël Nelis, David Hellin, et al.. (2007). H 2 S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface. Applied Physics Letters. 90(22). 29 indexed citations
11.
Houssa, Michel, J.L. Autran, M. M. Heyns, & A. Stesmans. (2003). Model for defect generation at the (1 0 0)Si/SiO2 interface during electron injection in MOS structures. Applied Surface Science. 212-213. 749–752. 11 indexed citations
12.
Афанасьев, В. В., Michel Houssa, A. Stesmans, G.J. Adriaenssens, & M. M. Heyns. (2002). Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si. Journal of Non-Crystalline Solids. 303(1). 69–77. 21 indexed citations
13.
Houssa, Michel, V. V. Afanas’ev, A. Stesmans, & M. M. Heyns. (2001). Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks. Applied Physics Letters. 79(19). 3134–3136. 31 indexed citations
14.
Houssa, Michel, A. Stesmans, & M. M. Heyns. (2001). Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2gate dielectric stacks. Semiconductor Science and Technology. 16(6). 427–432. 22 indexed citations
15.
Houssa, Michel, et al.. (2000). Soft breakdown in very thin Ta2O5 gate dielectric layers. Solid-State Electronics. 44(3). 521–525. 9 indexed citations
16.
Houssa, Michel, M. Naili, Chao Zhao, et al.. (2000). Effect of O2post-deposition anneals on the properties of ultra-thin SiOx/ZrO2gate dielectric stacks. Semiconductor Science and Technology. 16(1). 31–38. 59 indexed citations
17.
Verhaverbeke, Steven, et al.. (1994). The Etching Mechanisms of SiO2 in Hydrofluoric Acid. Journal of The Electrochemical Society. 141(10). 2852–2857. 107 indexed citations
18.
Meuris, Marc, Steven Verhaverbeke, P. Mertens, et al.. (1993). Cleaning technology for improved gate oxide integrity. Microelectronic Engineering. 22(1-4). 21–28. 14 indexed citations
19.
Heyns, M. M., et al.. (1989). Characterization of 30 nm nitrided oxides fabricated by rapid thermal nitridation. Applied Surface Science. 39(1-4). 227–237. 2 indexed citations
20.
Heyns, M. M., D. Krishna Rao, & R. F. De Keersmaecker. (1989). Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection. Applied Surface Science. 39(1-4). 327–338. 48 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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