M. Paoli

564 total citations
17 papers, 416 citations indexed

About

M. Paoli is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Paoli has authored 17 papers receiving a total of 416 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 2 papers in Biomedical Engineering and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Paoli's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). M. Paoli is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). M. Paoli collaborates with scholars based in France, Poland and Italy. M. Paoli's co-authors include T. Skotnicki, M. Jurczak, M. Haond, P. Ribot, D. Dutartre, S. Monfray, R. Pantel, J.L. Regolini, Jorge Martins and D. Lenoble and has published in prestigious journals such as IEEE Transactions on Electron Devices, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Microelectronics Reliability.

In The Last Decade

M. Paoli

17 papers receiving 390 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Paoli France 8 404 80 28 23 6 17 416
Kee Soo Nam South Korea 10 375 0.9× 63 0.8× 22 0.8× 50 2.2× 9 1.5× 29 389
Shiying Xiong United States 5 419 1.0× 65 0.8× 30 1.1× 23 1.0× 2 0.3× 5 435
C. Kerner Belgium 11 347 0.9× 40 0.5× 63 2.3× 26 1.1× 6 1.0× 33 360
P. Charvát United States 4 390 1.0× 93 1.2× 56 2.0× 47 2.0× 4 0.7× 5 412
R. Schreutelkamp Belgium 10 257 0.6× 51 0.6× 39 1.4× 41 1.8× 2 0.3× 31 276
C. Ortolland Belgium 11 380 0.9× 55 0.7× 61 2.2× 21 0.9× 6 1.0× 37 392
H. van Meer Belgium 10 444 1.1× 54 0.7× 61 2.2× 18 0.8× 3 0.5× 41 452
T. Y. Hoffmann Belgium 10 318 0.8× 30 0.4× 47 1.7× 24 1.0× 6 1.0× 32 339
R. Gafiteanu United States 6 340 0.8× 58 0.7× 78 2.8× 21 0.9× 5 0.8× 15 356
J. Sandford United States 5 490 1.2× 118 1.5× 60 2.1× 49 2.1× 5 0.8× 6 518

Countries citing papers authored by M. Paoli

Since Specialization
Citations

This map shows the geographic impact of M. Paoli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Paoli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Paoli more than expected).

Fields of papers citing papers by M. Paoli

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Paoli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Paoli. The network helps show where M. Paoli may publish in the future.

Co-authorship network of co-authors of M. Paoli

This figure shows the co-authorship network connecting the top 25 collaborators of M. Paoli. A scholar is included among the top collaborators of M. Paoli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Paoli. M. Paoli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Skotnicki, T., R. Gwoziecki, D. Lenoble, et al.. (2003). Heavily doped and extremely shallow junctions on insulator by SONCTION (SilicON Cut-off juncTION) process. 513–516. 4 indexed citations
2.
Josse, E., T. Skotnicki, M. Jurczak, et al.. (2002). High performance 40 nm vertical MOSFET within a conventional CMOS process flow. 55–56. 4 indexed citations
3.
Monfray, S., T. Skotnicki, Y. Morand, et al.. (2002). First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance. 29.7.1–29.7.4. 35 indexed citations
4.
Jurczak, M., T. Skotnicki, R. Gwoziecki, et al.. (2001). Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices. IEEE Transactions on Electron Devices. 48(8). 1770–1775. 64 indexed citations
5.
Jurczak, M., T. Skotnicki, S. Monfray, et al.. (2000). Dielectric pockets – a new concept of the junctions for deca-nanometric CMOS devices. 536–539. 5 indexed citations
6.
Skotnicki, T., M. Jurczak, Jorge Martins, et al.. (2000). Well-controlled, selectively under-etched Si/SiGe gates for RF and high performance CMOS. SPIRE - Sciences Po Institutional REpository. 156–157. 7 indexed citations
7.
Jurczak, M., T. Skotnicki, M. Paoli, et al.. (2000). Silicon-on-Nothing (SON)-an innovative process for advanced CMOS. IEEE Transactions on Electron Devices. 47(11). 2179–2187. 147 indexed citations
8.
Paoli, M., et al.. (2000). Plasma etch-back planarization coupled to chemical mechanical polishing for sub 0.18 μm shallow trench isolation technology. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1313–1320. 5 indexed citations
9.
Gwoziecki, R., M. Jurczak, T. Skotnicki, J.L. Regolini, & M. Paoli. (1999). Suitability of Elevated Source/Drain for Deep Submicron CMOS. European Solid-State Device Research Conference. 1. 384–387. 5 indexed citations
10.
Jurczak, M., T. Skotnicki, M. Paoli, et al.. (1999). SON (silicon on nothing)-a new device architecture for the ULSI era. 29–30. 32 indexed citations
11.
Jurczak, M., E. Josse, R. Gwoziecki, M. Paoli, & T. Skotnicki. (1998). Investigation on the Suitability of Vertical MOSFET's for High Speed (RF) CMOS Applications. European Solid-State Device Research Conference. 172–175. 9 indexed citations
12.
Gaillard, F., et al.. (1998). STI process steps for sub-quarter micron CMOS. Microelectronics Reliability. 38(2). 271–276. 16 indexed citations
13.
Halimaoui, A., C. Hernández, Joana Martins, et al.. (1998). Tailoring of the Nitrogen Profile in Thin Gate Oxides Using Substrate Nitridation by Nitric Oxide. MRS Proceedings. 532. 3 indexed citations
14.
Gwoziecki, R., M. Paoli, T. Skotnicki, et al.. (1998). Pure Ge mid-gap gate within an industrial high performance and low standby current 0.18 /spl mu/m CMOS process. 192–193. 2 indexed citations
15.
Paoli, M., et al.. (1996). Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies. IEEE Transactions on Electron Devices. 43(11). 1900–1906. 71 indexed citations
16.
Paoli, M., et al.. (1995). Analysis of Parasitic Effects in Advanced Isolation Schemes for Deep Submicron CMOS Technologies. European Solid-State Device Research Conference. 375–378. 2 indexed citations
17.
Levy, Davide, et al.. (1990). Optimization of a self-aligned titanium silicide process for submicron technology. IEEE Transactions on Semiconductor Manufacturing. 3(4). 168–175. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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