F. Leverd

1.4k total citations
36 papers, 390 citations indexed

About

F. Leverd is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, F. Leverd has authored 36 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 3 papers in Surfaces, Coatings and Films. Recurrent topics in F. Leverd's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). F. Leverd is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). F. Leverd collaborates with scholars based in France, Switzerland and United States. F. Leverd's co-authors include T. Skotnicki, Romuald Blanc, O. Joubert, D. Dutartre, R. Pantel, S. Monfray, Y. Morand, M. Rivoire, D. Louis and B. Tavel and has published in prestigious journals such as Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Solid-State Electronics and Materials Science in Semiconductor Processing.

In The Last Decade

F. Leverd

30 papers receiving 364 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Leverd France 11 386 67 44 41 25 36 390
Yee-Chia Yeo Singapore 9 490 1.3× 71 1.1× 91 2.1× 63 1.5× 14 0.6× 25 505
F.N. Cubaynes Belgium 9 369 1.0× 60 0.9× 34 0.8× 48 1.2× 9 0.4× 26 388
R. Surridge Canada 11 286 0.7× 49 0.7× 105 2.4× 28 0.7× 20 0.8× 30 312
Naoki Mitsugi Japan 9 303 0.8× 33 0.5× 228 5.2× 29 0.7× 17 0.7× 27 361
P. Charvát United States 4 390 1.0× 93 1.4× 56 1.3× 47 1.1× 13 0.5× 5 412
I. Polishchuk United States 8 446 1.2× 48 0.7× 68 1.5× 44 1.1× 24 1.0× 17 472
Toshihiro Sekigawa Japan 9 339 0.9× 40 0.6× 34 0.8× 46 1.1× 14 0.6× 48 353
C. Arvet France 10 223 0.6× 61 0.9× 23 0.5× 44 1.1× 16 0.6× 28 230
J.F. Nijs Belgium 8 331 0.9× 56 0.8× 124 2.8× 97 2.4× 8 0.3× 13 357
A. Grouillet France 11 257 0.7× 33 0.5× 68 1.5× 56 1.4× 49 2.0× 35 290

Countries citing papers authored by F. Leverd

Since Specialization
Citations

This map shows the geographic impact of F. Leverd's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Leverd with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Leverd more than expected).

Fields of papers citing papers by F. Leverd

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Leverd. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Leverd. The network helps show where F. Leverd may publish in the future.

Co-authorship network of co-authors of F. Leverd

This figure shows the co-authorship network connecting the top 25 collaborators of F. Leverd. A scholar is included among the top collaborators of F. Leverd based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Leverd. F. Leverd is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Deprat, Fabien, F. Leverd, M. Juhel, et al.. (2022). Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon. Materials Science in Semiconductor Processing. 144. 106549–106549. 2 indexed citations
2.
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Possémé, N., et al.. (2020). Silicon nitride spacer etching selectively to silicon using CH3F/O2/He/SiCl4 plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(3). 9 indexed citations
4.
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Possémé, N., F. Leverd, Daniel L. Benoit, et al.. (2018). Thin layer etching of low-k SiCO spacer using hydrogen ion implantation followed by hydrofluoric acid. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 36(5). 2 indexed citations
6.
Blanc, Romuald, et al.. (2014). Patterning of silicon nitride for CMOS gate spacer technology. II. Impact of subsilicon surface carbon implantation on epitaxial regrowth. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(2). 10 indexed citations
7.
Bœuf, F., S. Crémer, Nathalie Vulliet, et al.. (2014). Process Control for Silicon Photonics using 300mm SOI Wafers. 3 indexed citations
8.
Blanc, Romuald, et al.. (2013). Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(5). 36 indexed citations
9.
Roy, F., P. Boulenc, F. Leverd, et al.. (2013). Challenges in CMOS‐based images. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(1). 50–56. 8 indexed citations
10.
Civet, Yoan, et al.. (2011). Holed MEM Resonators for High Accuracy Frequency Trimming. Procedia Engineering. 25. 531–534. 1 indexed citations
11.
Denorme, S., Dominique Fleury, N. Loubet, et al.. (2010). Gate-all-around technology: Taking advantage of ballistic transport?. Solid-State Electronics. 54(9). 883–889. 18 indexed citations
12.
Denorme, S., N. Loubet, Y. Campidelli, et al.. (2010). Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications. 2 indexed citations
13.
Denorme, S., Dominique Fleury, N. Loubet, et al.. (2009). Gate-All-Around technology: taking advantage of ballistic transport ?. 7. 315–318. 2 indexed citations
14.
Ortolland, C., P. Morin, S. Orain, et al.. (2006). Stress Memorization Technique (SMT) Optimization for 45nm CMOS. 22 indexed citations
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Chanemougame, D., S. Monfray, F. Bœuf, et al.. (2005). Performance boost of scaled Si PMOS through novel SiGe stressor for HP CMOS. 180–181. 7 indexed citations
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18.
Chevalier, P., Laurent Rubaldo, D. Dutartre, et al.. (2004). 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology. 225–228. 18 indexed citations
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20.
Tavel, B., T. Skotnicki, G. Parès, et al.. (2002). Totally silicided (CoSi/sub 2/) polysilicon: a novel approach to very low-resistive gate (∼2Ω/□) without metal CMP nor etching. 37.5.1–37.5.4. 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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