G. Passemard

1.0k total citations
67 papers, 764 citations indexed

About

G. Passemard is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, G. Passemard has authored 67 papers receiving a total of 764 indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electronic, Optical and Magnetic Materials, 56 papers in Electrical and Electronic Engineering and 13 papers in Mechanics of Materials. Recurrent topics in G. Passemard's work include Copper Interconnects and Reliability (60 papers), Semiconductor materials and devices (42 papers) and Electronic Packaging and Soldering Technologies (16 papers). G. Passemard is often cited by papers focused on Copper Interconnects and Reliability (60 papers), Semiconductor materials and devices (42 papers) and Electronic Packaging and Soldering Technologies (16 papers). G. Passemard collaborates with scholars based in France, Switzerland and Belgium. G. Passemard's co-authors include V. Jousseaume, S. Maı̂trejean, A. Zenasni, L. Favennec, M. Fayolle, Florence Fusalba, O. Louveau, M. Verdier, A. Roule and J. Cluzel and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

G. Passemard

65 papers receiving 741 citations

Peers

G. Passemard

EEE

EOMM

Youssef Travaly Belgium

Peng Zuo China

Hidemitsu Aoki Japan

D. L. Eaton United States

Wen-Fa Wu Taiwan

Charles D. E. Lakeman United States

U. Coscia Italy

S. Molis United States

H. T. Langhammer Germany

Youssef Travaly Belgium

G. Passemard

957 ×1.6

EEE

460 ×1.0

EOMM

183 ×1.0

205 ×1.1

179 ×1.5

Citations per year, relative to G. Passemard G. Passemard (= 1×) peers Youssef Travaly

Countries citing papers authored by G. Passemard

Since Specialization

Citations

This map shows the geographic impact of G. Passemard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Passemard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Passemard more than expected).

Fields of papers citing papers by G. Passemard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Passemard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Passemard. The network helps show where G. Passemard may publish in the future.

Co-authorship network of co-authors of G. Passemard

This figure shows the co-authorship network connecting the top 25 collaborators of G. Passemard. A scholar is included among the top collaborators of G. Passemard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Passemard. G. Passemard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gall, Sylvain Le, S. Olivier, Martino Bernard, et al.. (2008). Investigation of the impact of CoWp self-aligned barrier deposition on the porous siOC properties after a direct CMP process. 71. 126–128. 1 indexed citations

Leduc, Patrick, N. Sillon, S. Maı̂trejean, et al.. (2007). Challenges for 3D IC integration: bonding quality and thermal management. 210–212. 69 indexed citations

Maı̂trejean, S., M. Verdier, Yves Bréchet, et al.. (2007). Evolution of Cu microstructure and resistivity during thermal treatment of damascene line: Influence of line width and temperature. Microelectronic Engineering. 84(11). 2723–2728. 31 indexed citations

Haumesser, Paul‐Henri, et al.. (2007). Copper Seeding and Filling: New Strategies for the 32 nm Node. ECS Meeting Abstracts. MA2007-01(18). 834–834. 1 indexed citations

Gosset, L.G., F. Gaillard, D. Bouchu, et al.. (2007). Multi-Level Cu Interconnects Integration and Characterization with Air Gap as Ultra-Low K Material Formed using a Hybrid Sacrificial Oxide / Polymer Stack. 58–60. 9 indexed citations

Zenasni, A., et al.. (2006). Investigation of Porogen Behavior during the Curing Process of Ultralow-k Spin-On Materials. Journal of The Electrochemical Society. 154(1). G6–G6. 22 indexed citations

Leduc, Patrick, et al.. (2006). CMP-induced Peeling in Multi-level Ultra Low-k / Cu Interconnects. MRS Proceedings. 914. 1 indexed citations

Favennec, L., V. Jousseaume, V. Rouessac, J. Durand, & G. Passemard. (2005). Ultra low κ PECVD Porogen Approach: Matrix Precursors Comparison and Porogen Removal Treatment Study. MRS Proceedings. 863. 5 indexed citations

Jousseaume, V., M. Fayolle, C. Guedj, et al.. (2005). Pore Sealing of a Porous Dielectric by Using a Thin PECVD a-SiC:H Conformal Liner. Journal of The Electrochemical Society. 152(10). F156–F156. 17 indexed citations

10.

Guedj, C., V. Arnal, L. Arnaud, et al.. (2005). Bias-stress-induced evolution of the dielectric properties of porous-ULK/ copper advanced interconnects. Microelectronic Engineering. 80. 345–348. 5 indexed citations

11.

Jousseaume, V., et al.. (2005). Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties. Thin Solid Films. 495(1-2). 124–129. 33 indexed citations

12.

Haumesser, Paul‐Henri, S. Maı̂trejean, Thierry Mourier, et al.. (2004). Copper metallization for advanced interconnects: the electrochemical revolution. 3–5. 3 indexed citations

13.

Jeannot, S., R. Orobtchouk, Jean-Marc Fédéli, et al.. (2004). Intrachip optical interconnect: an above IC approach. 12. 248–250. 1 indexed citations

14.

Moussavi, M., et al.. (2003). Electron spin resonance (ESR) characterization of defects in low-k dielectrics. 78. 50–52.

15.

Fayolle, M., J. Torrès, G. Passemard, et al.. (2003). Integration of Cu/SiOC in dual damascene interconnect for 0.1 μm technology using a new SiC material as dielectric barrier. 39–41. 4 indexed citations

16.

Morand, Y., M. Assous, M. Fayolle, et al.. (2002). Copper dual damascene integration using organic low k material: construction architecture comparison. 225–227. 1 indexed citations

17.

Fayolle, M., G. Passemard, M. Assous, et al.. (2002). Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect. Microelectronic Engineering. 60(1-2). 119–124. 18 indexed citations

18.

Turek, Philippe, et al.. (2002). Electron spin resonance (ESR) characterization of defects in low-k dielectrics-temperature effect. 173–175. 1 indexed citations

19.

Passemard, G., et al.. (2000). SILK compatibility with the IMD process using copper metallization. Microelectronic Engineering. 50(1-4). 25–32. 10 indexed citations

20.

Braud, Flavie, J. Torrès, J. Palleau, et al.. (1997). Study of the thermal stability at the interface. Microelectronic Engineering. 33(1-4). 369–375. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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