J. Torrès

1.5k citations

130 papers · 1.2k indexed · h-index 19

Impact in

Electronic, Optical and Magnetic Materials top 5%
- Copper Interconnects and Reliability
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Silicon and Solar Cell Technologies

Papers in ⓘ

Electrical and Electronic Engineering 113
- Semiconductor materials and devices 80
- 3D IC and TSV technologies 25
- Electronic Packaging and Soldering Technologies 23
- Advancements in Semiconductor Devices and Circuit Design 6
Electronic, Optical and Magnetic Materials 89
- Copper Interconnects and Reliability 88

Co-authors: J. Palleau (25 shared papers)G. Bomchil (5 shared papers)A. Farcy (36 shared papers)V. Arnal (22 shared papers)R. Madar (10 shared papers)R. Pantel (9 shared papers)L.G. Gosset (18 shared papers)L.L. Chapelon (9 shared papers)
Journals: Microelectronic Engineering (49 papers)Thin Solid Films (5 papers)Applied Surface Science (4 papers)Journal of Applied Physics (4 papers)Microelectronics Reliability (3 papers)
Partner nations: France Switzerland Mexico

In The Last Decade

J. Torrès

124 papers receiving 1.1k citations

Peers

Countries citing papers authored by J. Torrès

Since Specialization

Citations

This map shows the geographic impact of J. Torrès's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Torrès with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Torrès more than expected).

Fields of papers citing papers by J. Torrès

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Torrès. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Torrès. The network helps show where J. Torrès may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Torrès, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Torrès Line = papers co-authored together J. Torrès links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 130 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Advanced copper interconnections for silicon CMOS technologies Applied Surface Science ·J. Torrès	1995	81
2	Carbon nanotube–TiO₂hybrid films for detecting traces of O₂ Nanotechnology ·Eduard Llobet, Edgar Espinosa, E. Sotter, Radu Ionescu, X Vilanova, J. Torrès, Alexandre Felten, Jean‐Jacques Pireaux, Xiaoxing Ke, G. Van Tendeloo, Fabian Renaux, Yoann Paint, M. Hecq, Carla Bittencourt	2008	52
3	Electromigration resistance of copper interconnects Microelectronic Engineering ·D. Save, Flavie Braud, J. Torrès, F. Binder, Clemens Müller, J.-O. Weidner, W Haße	1997	35
4	Influence of oxygen on the formation of refractory metal silicides Thin Solid Films ·G. Bomchil, G. Goeltz, J. Torrès	1986	34
5	Characterization and integration of a CVD porous SiOCH (k<2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below Microelectronic Engineering ·L.L. Chapelon, V. Arnal, M. Broekaart, L.G. Gosset, J. Vitiello, J. Torrès	2004	29
6	Film texture evolution in plasma treated TiN thin films Journal of Applied Physics ·S. Ikeda, J. Palleau, J. Torrès, B. Chenevier, N. Bourhila, R. Madar	1999	27
7	TiN-CVD process optimization for integration with Cu-CVD Microelectronic Engineering ·P. Motte, M. Proust, J. Torrès, Y. Gobil, Y. Morand, J. Palleau, R. Pantel, M. Juhel	2000	25
8	Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: Application to WSi2 Journal of Applied Physics ·P. A. Badoz, E. Rosencher, J. Torrès, G. Fishman	1987	24
9	Advanced Cu interconnects using air gaps Microelectronic Engineering ·L.G. Gosset, A. Farcy, J. de Pontcharra, Ph. Lyan, R. Daamen, G.J.A.M. Verheijden, V. Arnal, F. Gaillard, D. Bouchu, P.H.L. Bancken, T. Vandeweyer, J. Michelon, V. Nguyen Hoang, R.J.O.M. Hoofman, J. Torrès	2005	24
10	Formation and characterization of tungsten silicide layers Thin Solid Films ·G. Göltz, J. Torrès, J. Lajzérowicz, G. Bomchil	1985	24
11	XPS studies of the ALD-growth of TaN diffusion barriers: Impact of the dielectric surface chemistry on the growth mechanism Microelectronic Engineering ·F. Volpi, Lionel Cadix, G. Berthomé, E. Blanquet, N. Jourdan, J. Torrès	2008	23
12	Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology Microelectronic Engineering ·M. Fayolle, J. Torrès, G. Passemard, Florence Fusalba, Gilles L. Fanget, D. Louis, M. Assous, O. Louveau, M. Rivoire, K. Haxaire, M Mourier, S. Maı̂trejean, P. Besson, Lucile Broussous, L. Arnaud, H. Feldis	2002	23
13	Electromigration failure modes in damascene copper interconnects Microelectronics Reliability ·L. Arnaud, R. Gonella, G. Tartavel, J. Torrès, C. Gounelle, Y. Gobil, Y. Morand	1998	23
14	Growth of MoSi2 with preferential orientation on (100) silicon Applied Physics Letters ·A. Pério, J. Torrès, G. Bomchil, F. Arnaud d’Avitaya, R. Pantel	1984	23
15	Ti-diffusion barrier in Cu-based metallization Applied Surface Science ·Flavie Braud, J. Torrès, J. Palleau, J.L. Mermet, Marie-José Mouche	1995	22
16	Copper-based metallization for ULSI circuits Microelectronic Engineering ·J. Torrès, J.L. Mermet, R. Madar, G.M. Crean, Thomas Geßner, A. Bertz, W Haße, Matthias Plötner, F. Binder, D. Save	1996	22
17	Kinetics of WSi2 formation at low and high temperatures Thin Solid Films ·J. Lajzérowicz, J. Torrès, G. Göltz, R. Pantel	1986	21
18	Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD Microelectronic Engineering ·M. Dubosc, S. Casimirius, Marie‐Paule Besland, Christophe Cardinaud, A. Granier, Jean‐Luc Duvail, A. Gohier, T. Minéa, V. Arnal, J. Torrès	2007	21
19	Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects Microelectronic Engineering ·S. Chhun, L.G. Gosset, N. Casanova, D. Ney, D. Delille, C. Trouiller, M. Hopstaken, P. Chausse, M. Grégoire, Brice Gautier, J.C. Dupuy, J. Torrès	2005	19
20	Measuring the Young’s modulus of ultralow-k materials with the non destructive picosecond ultrasonic method Microelectronic Engineering ·L.L. Chapelon, J. Vitiello, D. Neira, J. Torrès, Jean-Claude Royer, D. Barbier, F. Naudin, G. Tas, Priya Mukundhan, Jana Clerico	2006	18

About J. Torrès

J. Torrès is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Mechanics of Materials, having authored 130 papers that have together received 1.2k indexed citations. Recurring topics across this work include Copper Interconnects and Reliability (88 papers), Semiconductor materials and devices (80 papers), Semiconductor materials and interfaces (27 papers), 3D IC and TSV technologies (25 papers), Electronic Packaging and Soldering Technologies (23 papers), Metal and Thin Film Mechanics (7 papers), Anodic Oxide Films and Nanostructures (7 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (574 citations), Electrical and Electronic Engineering (913 citations), Mechanics of Materials (255 citations), Atomic and Molecular Physics, and Optics (256 citations) and Materials Chemistry (274 citations). J. Torrès has collaborated with scholars based in France, Switzerland and Mexico. Frequent co-authors include J. Palleau, G. Bomchil, A. Farcy, V. Arnal, R. Madar, R. Pantel, L.G. Gosset, L.L. Chapelon, A. Pério and Flavie Braud. Their work appears in journals such as Microelectronic Engineering, Thin Solid Films, Applied Surface Science, Journal of Applied Physics and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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