Reza Ghandi

1.4k total citations
75 papers, 1.0k citations indexed

About

Reza Ghandi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Reza Ghandi has authored 75 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in Reza Ghandi's work include Silicon Carbide Semiconductor Technologies (59 papers), Semiconductor materials and devices (36 papers) and Electromagnetic Compatibility and Noise Suppression (25 papers). Reza Ghandi is often cited by papers focused on Silicon Carbide Semiconductor Technologies (59 papers), Semiconductor materials and devices (36 papers) and Electromagnetic Compatibility and Noise Suppression (25 papers). Reza Ghandi collaborates with scholars based in Sweden, United States and Israel. Reza Ghandi's co-authors include Carl‐Mikael Zetterling, Mikael Östling, Martin Domeij, Benedetto Buono, B. Gunnar Malm, Alexander Bolotnikov, Luigia Lanni, Mohammadreza Kolahdouz, Henry H. Radamson and Peter Sandvik and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Reza Ghandi

70 papers receiving 958 citations

Peers

Countries citing papers authored by Reza Ghandi

Since Specialization

Citations

This map shows the geographic impact of Reza Ghandi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Reza Ghandi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Reza Ghandi more than expected).

Fields of papers citing papers by Reza Ghandi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Reza Ghandi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Reza Ghandi. The network helps show where Reza Ghandi may publish in the future.

Co-authorship network of co-authors of Reza Ghandi

This figure shows the co-authorship network connecting the top 25 collaborators of Reza Ghandi. A scholar is included among the top collaborators of Reza Ghandi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Reza Ghandi. Reza Ghandi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	5-kV SiC Deep-Implanted Superjunction MOSFETs 2025 ·IEEE Electron Device Letters ·Reza Ghandi, Collin Hitchcock, (unknown), (unknown), (unknown)	1
2	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), (unknown), Collin Hitchcock, Reza Ghandi, (unknown), T. Paul Chow	1
3	Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices 2024 ·IEEE Transactions on Nuclear Science ·(unknown), Dennis R. Ball, (unknown), (unknown), Andrew L. Sternberg, En Xia Zhang, Michael L. Alles, (unknown), Reza Ghandi, Biju Jacob, (unknown), Collin Hitchcock, John M. Hutson, Robert A. Reed, K.F. Galloway, Ronald D. Schrimpf, Arthur F. Witulski	8
4	Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), David Shaddock, (unknown), (unknown), Reza Ghandi	1
5	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures 2024 ·Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·(unknown), Yafei Liu, (unknown), Shanshan Hu, Balaji Raghothamachar, Reza Ghandi, (unknown), (unknown), (unknown), Michael Dudley	0
6	Experimental Comparative Demonstrations and Analysis of 3.3kV 4H-SiC Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching 2024 ·Zishu He, (unknown), Reza Ghandi, Collin Hitchcock, (unknown), T. P. Chow	0
7	Spatial Nonuniformity of Photoresponse in SiC UV Avalanche Photodiodes Operating in Linear and Geiger Mode 2024 ·ECS Meeting Abstracts ·Daniel B. Habersat, Anand V. Sampath, (unknown), (unknown), Michael A. Derenge, Gregory A. Garrett, Brenda L. VanMil, Michael Wraback, E. Bellotti, (unknown), Reza Ghandi, S. Dolinsky, (unknown)	0
8	Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms 2022 ·Materials science forum ·(unknown), Hong Peng, Yafei Liu, (unknown), Shanshan Hu, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, (unknown), P. Thieberger	3
9	500°C Silicon Carbide MOSFET-Based Integrated Circuits 2014 ·Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ·(unknown), Reza Ghandi, Liang Yin, (unknown), (unknown), (unknown), Peter Sandvik	8
10	Investigation of Current Gain Degradation in 4H-SiC Power BJTs 2012 ·Materials science forum ·Benedetto Buono, Reza Ghandi, Martin Domeij, B. Gunnar Malm, Carl‐Mikael Zetterling, Mikael Östling	1
11	Bipolar Integrated OR-NOR Gate in 4H-SiC 2012 ·Materials science forum ·Luigia Lanni, Reza Ghandi, Carl‐Mikael Zetterling, B. Gunnar Malm, Mikael Östling	2
12	Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001) 2012 ·Journal of Crystal Growth ·(unknown), Per Eklund, Jens Jensen, Jun Lu, Reza Ghandi, Martin Domeij, Carl‐Mikael Zetterling, G. Behan, Hongzhou Zhang, Anita Lloyd Spetz, Lars Hultman	8
13	Current Gain Degradation in 4H-SiC Power BJTs 2011 ·Materials science forum ·Benedetto Buono, Reza Ghandi, Martin Domeij, B. Gunnar Malm, Carl‐Mikael Zetterling, Mikael Östling	7
14	Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits 2011 ·Materials science forum ·Luigia Lanni, Reza Ghandi, Martin Domeij, Carl‐Mikael Zetterling, B. Gunnar Malm, Mikael Östling	1
15	High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain 2011 ·IEEE Transactions on Electron Devices ·Reza Ghandi, Benedetto Buono, Martin Domeij, Carl‐Mikael Zetterling, Mikael Östling	26
16	Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation 2011 ·IEEE Electron Device Letters ·Reza Ghandi, Benedetto Buono, Carl‐Mikael Zetterling, Martin Domeij, (unknown), Mikael Östling	6
17	Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors 2011 ·KTH Publication Database DiVA (KTH Royal Institute of Technology) ·Reza Ghandi	1
18	Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs 2010 ·IEEE Transactions on Electron Devices ·Benedetto Buono, Reza Ghandi, Martin Domeij, B. Gunnar Malm, Carl‐Mikael Zetterling, Mikael Östling	55
19	High Current-Gain Implantation-Free 4H-SiC Monolithic Darlington Transistor 2010 ·IEEE Electron Device Letters ·Reza Ghandi, Benedetto Buono, Martin Domeij, Mikael Östling	4
20	The influence of Si coverage in a chip on layer profile of selectively grown Si1−xGex layers using RPCVD technique 2008 ·Thin Solid Films ·Mohammadreza Kolahdouz, Reza Ghandi, (unknown), (unknown), R. Wise, (unknown), (unknown)	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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