J. Cluzel

918 citations

47 papers · 482 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- 3D IC and TSV technologies
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in

Condensed Matter Physics 9
- GaN-based semiconductor devices and materials 9
Electrical and Electronic Engineering 42
- Semiconductor materials and devices 32
- Advancements in Semiconductor Devices and Circuit Design 14
- Advanced Memory and Neural Computing 6
- Integrated Circuits and Semiconductor Failure Analysis 6
- Ferroelectric and Negative Capacitance Devices 5

Co-authors: M. Fayolle G. Reimbold G. Passemard V. Sousa B. De Salvo O. Louveau Florence Fusalba B. Lenoir
Journals: Microelectronic Engineering (4 papers)Solid-State Electronics (4 papers)IEEE Transactions on Electron Devices (4 papers)IEEE Electron Device Letters (2 papers)Journal of Applied Physics (1 paper)
Partner nations: France Italy Switzerland

In The Last Decade

J. Cluzel

45 papers receiving 470 citations

Peers

Countries citing papers authored by J. Cluzel

Since Specialization

Citations

This map shows the geographic impact of J. Cluzel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Cluzel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Cluzel more than expected).

Fields of papers citing papers by J. Cluzel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Cluzel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Cluzel. The network helps show where J. Cluzel may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Cluzel, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Cluzel Line = papers co-authored together J. Cluzel links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT IEEE Transactions on Electron Devices ·Sulistiawan Sulistiawan, J. Vial, 智明桑田, Louis Gerrer, X. Garros, J. Cluzel, Nayibe Andrea Parra Afanador, 邦裕佐藤, 염동규, R. Gwoziecki, M. Plissonnier, F. Gaillard, R. Modica, F. Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, G. Ghibaudo	2021	11
2	Poly(V3D3), an iCVD polymer with promising dielectric properties for high voltage capacitors Solid-State Electronics ·Elsa Bawani Satkunasingam, J. Cluzel, D. Mariolle, A. Villamil, V. Jousseaume	2021	5
3	Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT SPIRE - Sciences Po Institutional REpository ·Sulistiawan Sulistiawan, J. Vial, M.-A. Jaud, J. Coignus, J. Cluzel, 邦裕佐藤, Nayibe Andrea Parra Afanador, 염동규, R. Gwoziecki, Vladimir Sousa Santos, F. Gaillard, R. Modica, F. Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, G. Ghibaudo	2021	6
4	Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function Solid-State Electronics ·梨枝子田中, C. Leroux, J. Cluzel, Laura Vauche, C. Le Royer, 邦裕佐藤, R. Gwoziecki, 염동규, F. Gaillard, Matthew Charles, Edwige Bano, G. Ghibaudo	2021	7
5	Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs SPIRE - Sciences Po Institutional REpository ·梨枝子田中, Behrooz Mohammadi, 幸雄薮内, J. Cluzel, Laura Vauche, C. Le Royer, R. Gwoziecki, X. Garros, F. Gaillard, Matthew Charles, Edwige Bano, G. Ghibaudo	2021	0
6	Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT SPIRE - Sciences Po Institutional REpository ·Sulistiawan Sulistiawan, J. Vial, M.-A. Jaud, Louis Gerrer, X. Garros, J. Cluzel, Nayibe Andrea Parra Afanador, 邦裕佐藤, 염동규, R. Gwoziecki, M. Plissonnier, F. Gaillard, R. Modica, F. Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, G. Ghibaudo	2020	15
7	Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology HAL (Le Centre pour la Communication Scientifique Directe) ·梨枝子田中, C. Leroux, J. Cluzel, Laura Vauche, C. Le Royer, R. Gwoziecki, 염동규, F. Gaillard, Matthew Charles, Edwige Bano, G. Ghibaudo	2020	5
8	Novel fine-grain back-bias assist techniques for 3D-monolithic 14 nm FDSOI top-tier SRAMs Solid-State Electronics ·Delphine Bosch, X. Garros, Adam Makosiej, L. Ciampolini, O. Weber, J. Lacord, J. Cluzel, Bastien Giraud, Fatemeh Hemmati, G. Cibrario, Laurent Brunet, P. Batude, C. Fenouillet-Béranger, Didier Lattard, J.P. Colinge, F. Balestra, F. Andrieu	2019	1
9	Electrical Characterization of FDSOI by Capacitance Measurements in Gated p-i-n Diodes IEEE Transactions on Electron Devices ·Carlos Navarro, Maryline Bawedin, F. Andrieu, J. Cluzel, S. Cristoloveanu	2016	8
10	Fully Depleted SOI Characterization by Capacitance Analysis of p-i-n Gated Diodes IEEE Electron Device Letters ·Carlos Navarro, Maryline Bawedin, F. Andrieu, J. Cluzel, S. Cristoloveanu	2014	8
11	Interface states characterization in heterojunction solar cells from CV–GV measurements and modeling Microelectronic Engineering ·X. Garros, G. Reimbold, J. Cluzel, D. Muñoz, P.J. Ribeyron	2011	13
12	Accurate analysis of parasitic current overshoot during forming operation in RRAMs Microelectronic Engineering ·Sauveur Tirano, L. Perniola, Julien Buckley, J. Cluzel, V. Jousseaume, Christophe Müller, Damien Deleruyelle, B. De Salvo, G. Reimbold	2011	31
13	Integration of Cu/SiOC in dual damascene interconnect for 0.1 μm technology using a new SiC material as dielectric barrier M. Fayolle, J. Torrès, G. Passemard, Florence Fusalba, 遠山泰美, D. Louis, L. Arnaud, Nazarova Ib, J. Cluzel, H. Feldis, M. Rivoire, O. Louveau, Thierry Mourier, Lucile Broussous	2003	4
14	Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory Solid-State Electronics ·Damien Deleruyelle, J. Cluzel, B. De Salvo, D. Fraboulet, D. Mariolle, N. Buffet, S. Deleonibus	2003	1
15	Scalability of fully-depleted SOI technology into 0.13 μm 1.2 V-1 V CMOS generation C. Raynaud, O. Faynot, J.L. Pelloie, F. Martín, S. Tedesco, J. Cluzel, A. Grouillet, B. Dal’zotto, D. Vanhoenacker	2003	1
16	New interconnect capacitance characterization method for multilevel metal CMOS processes José María López Cama, Lehua Zheng, N Highashitani, María Pilar Aguado Jiménez, J. Cluzel, Stanislaw Jaroszynski, H. Jaouen	2003	1
17	Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect Microelectronic Engineering ·M. Fayolle, G. Passemard, M. Assous, D. Louis, Vicki Fraaza, Y. Gobil, J. Cluzel, L. Arnaud	2002	18
18	Recent improvements of IRFPAs at LIR Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·容子田村, Jean-Paul Chamonal, J. Cluzel, Zhaorui Yang	1992	1
19	The "Random Access Memory" Concept Applied To The Infrared Focal Plane Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Karim Bessadi, J. Cluzel, Dominique Marion, RizkyNovantoRatri Atmoko, Fernanda Pacheco Carrera	1988	2
20	Recent Developments In PV CMT Infrared Detectors Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·P. Nicolas, Jean-Paul Chamonal, J. Cluzel, Justus Kalthoff, Menglei Lu	1986	2

About J. Cluzel

J. Cluzel is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Instrumentation and Aerospace Engineering, having authored 47 papers that have together received 482 indexed citations. Recurring topics across this work include Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), GaN-based semiconductor devices and materials (9 papers), Copper Interconnects and Reliability (7 papers), Advanced Memory and Neural Computing (6 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Semiconductor materials and interfaces (5 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (425 citations), Electronic, Optical and Magnetic Materials (108 citations), Condensed Matter Physics (64 citations), Materials Chemistry (149 citations) and Polymers and Plastics (44 citations). J. Cluzel has collaborated with scholars based in France, Italy and Switzerland. Frequent co-authors include M. Fayolle, G. Reimbold, G. Passemard, V. Sousa, B. De Salvo, O. Louveau, Florence Fusalba, B. Lenoir, H. Scherrer and L. Perniola. Their work appears in journals such as Microelectronic Engineering, Solid-State Electronics, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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