F. Gaillard

525 total citations
29 papers, 419 citations indexed

About

F. Gaillard is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanical Engineering. According to data from OpenAlex, F. Gaillard has authored 29 papers receiving a total of 419 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 6 papers in Mechanical Engineering. Recurrent topics in F. Gaillard's work include Semiconductor materials and devices (13 papers), Electrochemical Analysis and Applications (6 papers) and Copper Interconnects and Reliability (6 papers). F. Gaillard is often cited by papers focused on Semiconductor materials and devices (13 papers), Electrochemical Analysis and Applications (6 papers) and Copper Interconnects and Reliability (6 papers). F. Gaillard collaborates with scholars based in France, Belgium and Switzerland. F. Gaillard's co-authors include Eric Levillain, J. P. Lelieur, A. Demortier, Pascal Brault, Patrick Schiavone, J. Torrès, D. Bouchu, Naoufal Bahlawane, J. de Pontcharra and Natarajan Prakash and has published in prestigious journals such as Thin Solid Films, Journal of Electroanalytical Chemistry and Materials Chemistry and Physics.

In The Last Decade

F. Gaillard

28 papers receiving 404 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Gaillard France 11 311 133 67 63 51 29 419
Thorsten Plaggenborg Germany 11 272 0.9× 201 1.5× 73 1.1× 33 0.5× 49 1.0× 21 431
Jeffrey J. Black Australia 11 174 0.6× 207 1.6× 46 0.7× 17 0.3× 54 1.1× 13 362
Eric W. Stacy United States 7 283 0.9× 78 0.6× 45 0.7× 56 0.9× 50 1.0× 9 420
Ho‐Jung Sun South Korea 11 386 1.2× 176 1.3× 162 2.4× 24 0.4× 37 0.7× 53 507
P. Fragnaud France 12 399 1.3× 154 1.2× 129 1.9× 100 1.6× 20 0.4× 19 490
Jianxu Ding China 14 428 1.4× 233 1.8× 107 1.6× 67 1.1× 39 0.8× 43 545
Shreyas Honrao United States 12 240 0.8× 394 3.0× 91 1.4× 23 0.4× 27 0.5× 15 539
Alexandra Merson Israel 7 449 1.4× 311 2.3× 35 0.5× 158 2.5× 47 0.9× 7 712
Yoshiki Iwai Japan 14 414 1.3× 179 1.3× 109 1.6× 77 1.2× 68 1.3× 33 578
Ken‐Ming Yin Taiwan 12 319 1.0× 188 1.4× 43 0.6× 14 0.2× 67 1.3× 24 424

Countries citing papers authored by F. Gaillard

Since Specialization
Citations

This map shows the geographic impact of F. Gaillard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Gaillard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Gaillard more than expected).

Fields of papers citing papers by F. Gaillard

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Gaillard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Gaillard. The network helps show where F. Gaillard may publish in the future.

Co-authorship network of co-authors of F. Gaillard

This figure shows the co-authorship network connecting the top 25 collaborators of F. Gaillard. A scholar is included among the top collaborators of F. Gaillard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Gaillard. F. Gaillard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Paz, Bruna Cardoso, Bernard M. Diaz, Benoît Bertrand, et al.. (2022). Methodology for an efficient characterization flow of industrial grade Si-based qubit devices. 2022 International Electron Devices Meeting (IEDM). 9. 22.1.1–22.1.4. 2 indexed citations
2.
Garros, X., J. Lacord, F. Andrieu, et al.. (2019). RF Performance of a Fully Integrated 3D Sequential Technology. SPIRE - Sciences Po Institutional REpository. 25.1.1–25.1.4. 3 indexed citations
3.
Monfray, S., F. Bœuf, G. Savelli, et al.. (2012). A disruptive technology for thermal to electrical energy conversion. 1–3. 1 indexed citations
4.
Monfray, S., G. Savelli, P. Coronel, et al.. (2012). An innovative heat harvesting technology (HEATec) for above-Seebeck performance. 12.5.1–12.5.4. 9 indexed citations
5.
Premkumar, P., Natarajan Prakash, F. Gaillard, & Naoufal Bahlawane. (2010). CVD of Ru, Pt and Pt-based alloy thin films using ethanol as mild reducing agent. Materials Chemistry and Physics. 125(3). 757–762. 16 indexed citations
6.
Martin, Steve W., et al.. (2007). Effect of elaboration parameters on ionic conductivity for PECVD fuel cell electrolyte. Ionics. 14(5). 403–406. 6 indexed citations
7.
8.
Guedj, C., V. Arnal, R. Daamen, et al.. (2006). Spectral photoresponse of advanced interconnects: a possible solution to the ITRS most difficult characterization challenges. 45. 207–209. 1 indexed citations
9.
Gaillard, F., et al.. (2005). Copper Decontamination Ability of Supercritical-CO<sub>2</sub>/Additives on CVD and Spin-On Porous MSQ Materials. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 103-104. 327–330. 1 indexed citations
10.
Gosset, L.G., A. Farcy, J. de Pontcharra, et al.. (2005). Advanced Cu interconnects using air gaps. Microelectronic Engineering. 82(3-4). 321–332. 24 indexed citations
11.
Jeannot, S., R. Orobtchouk, Jean-Marc Fédéli, et al.. (2004). Intrachip optical interconnect: an above IC approach. 12. 248–250. 1 indexed citations
12.
Clergereaux, Richard, et al.. (2004). Carbon Layer as a New Material for Optics. MRS Proceedings. 817. 1 indexed citations
13.
Travaly, Youssef, B. Eyckens, A. Rothschild, et al.. (2002). Impact of material/process interactions on the properties of a porous CVD-O3 low-k dielectric film. Microelectronic Engineering. 64(1-4). 367–374. 2 indexed citations
14.
Gaillard, F., et al.. (1998). STI process steps for sub-quarter micron CMOS. Microelectronics Reliability. 38(2). 271–276. 16 indexed citations
15.
Levillain, Eric, et al.. (1997). On the understanding of the reduction of sulfur (S8) in dimethylformamide (DMF). Journal of Electroanalytical Chemistry. 420(1-2). 167–177. 61 indexed citations
16.
Gaillard, F., et al.. (1997). Polysulphides in dimethylformamide: a micro-Raman spectroelectrochemical study. Journal of Raman Spectroscopy. 28(7). 511–517. 10 indexed citations
17.
Levillain, Eric, F. Gaillard, & J. P. Lelieur. (1997). Polysulfides in dimethylformamide: only the redox couples S−n/S2−n are involved. Journal of Electroanalytical Chemistry. 440(1-2). 243–250. 26 indexed citations
18.
Gaillard, F., Eric Levillain, & J. P. Lelieur. (1997). Polysulfides in dimethylformamide: Only the radical anions S3− and S4− are reducible. Journal of Electroanalytical Chemistry. 432(1-2). 129–138. 50 indexed citations
19.
Gaillard, F., et al.. (1997). Effect of plasma and thermal annealing on chemical vapor deposition dielectrics grown using SIH4–H2O2 gas mixtures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(5). 2478–2484. 4 indexed citations
20.
Levillain, Eric, F. Gaillard, A. Demortier, & J. P. Lelieur. (1996). Electrochemical and spectroelectrochemical study of the oxidation of S2−4 and S2−6 ions in liquid ammonia. Journal of Electroanalytical Chemistry. 405(1-2). 85–94. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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