M. Assous

699 total citations
45 papers, 433 citations indexed

About

M. Assous is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, M. Assous has authored 45 papers receiving a total of 433 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 20 papers in Electronic, Optical and Magnetic Materials and 8 papers in Biomedical Engineering. Recurrent topics in M. Assous's work include 3D IC and TSV technologies (28 papers), Copper Interconnects and Reliability (20 papers) and Electronic Packaging and Soldering Technologies (20 papers). M. Assous is often cited by papers focused on 3D IC and TSV technologies (28 papers), Copper Interconnects and Reliability (20 papers) and Electronic Packaging and Soldering Technologies (20 papers). M. Assous collaborates with scholars based in France, Japan and Switzerland. M. Assous's co-authors include A. Farcy, R. Blanc, S. Borel, Jean Charbonnier, D. Louis, M. Fayolle, L. Arnaud, H. Feldis, O. Louveau and N. Bresson and has published in prestigious journals such as Applied Spectroscopy, Microelectronic Engineering and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

M. Assous

43 papers receiving 416 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Assous France 14 401 146 68 60 31 45 433
B. Eyckens Belgium 6 346 0.9× 112 0.8× 58 0.9× 47 0.8× 39 1.3× 9 384
John Slabbekoorn Belgium 13 373 0.9× 69 0.5× 88 1.3× 12 0.2× 36 1.2× 57 401
Geraldine Jamieson Belgium 11 319 0.8× 125 0.9× 49 0.7× 20 0.3× 51 1.6× 26 345
R. Yu United States 6 370 0.9× 59 0.4× 88 1.3× 11 0.2× 26 0.8× 10 403
K. Vandersmissen Belgium 12 391 1.0× 159 1.1× 78 1.1× 26 0.4× 52 1.7× 27 417
Lingling Hu China 10 223 0.6× 55 0.4× 100 1.5× 31 0.5× 52 1.7× 24 335
Kihyun Hwang South Korea 9 257 0.6× 31 0.2× 40 0.6× 16 0.3× 76 2.5× 27 289
F. Chen United States 12 429 1.1× 264 1.8× 34 0.5× 23 0.4× 32 1.0× 21 446
Ryan Davies United States 13 362 0.9× 112 0.8× 51 0.8× 15 0.3× 170 5.5× 17 508
Stefaan Van Huylenbroeck Belgium 14 645 1.6× 56 0.4× 81 1.2× 10 0.2× 39 1.3× 83 660

Countries citing papers authored by M. Assous

Since Specialization
Citations

This map shows the geographic impact of M. Assous's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Assous with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Assous more than expected).

Fields of papers citing papers by M. Assous

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Assous. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Assous. The network helps show where M. Assous may publish in the future.

Co-authorship network of co-authors of M. Assous

This figure shows the co-authorship network connecting the top 25 collaborators of M. Assous. A scholar is included among the top collaborators of M. Assous based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Assous. M. Assous is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Borel, S., et al.. (2024). Low Resistance and High Isolation HD TSV for 3-Layer CMOS Image Sensors. SPIRE - Sciences Po Institutional REpository. 771–777. 2 indexed citations
2.
Malhouitre, Stéphane, M. Assous, Léopold Virot, et al.. (2023). Process Integration of Photonic Interposer for Chiplet-based 3D Systems. HAL (Le Centre pour la Communication Scientifique Directe). 5–12. 2 indexed citations
3.
Borel, S., et al.. (2023). Recent Progress in the Development of High-Density TSV for 3-Layers CMOS Image Sensors. SPIRE - Sciences Po Institutional REpository. 1156–1163. 6 indexed citations
4.
Nicolas, Stéphane, et al.. (2023). Demonstration of a Wafer Level Face- To-Back (F2B) Fine Pitch Cu-Cu Hybrid Bonding with High Density TSV for 3D Integration Applications. SPIRE - Sciences Po Institutional REpository. 97–102. 13 indexed citations
5.
Charbonnier, Jean, M. Assous, Thierry Mourier, et al.. (2016). 3D integration for power MOS H bridge power application. 1–7. 1 indexed citations
6.
Charbonnier, Jean, et al.. (2013). Bow management with temperature for thin chips integration. European Microelectronics and Packaging Conference. 1–4. 1 indexed citations
7.
Assous, M., Patrick Leduc, Aurélie Thuaire, et al.. (2010). A successful implementation of dual damascene architecture to copper TSV for 3D high density applications. 1–4. 3 indexed citations
8.
Cioccio, L. Di, Pierric Gueguen, Thomas Signamarcheix, et al.. (2009). Enabling 3D interconnects with metal direct bonding. 152–154. 6 indexed citations
9.
Leduc, Patrick, M. Assous, D. Bouchu, et al.. (2008). The Effect of Process Parameters on Electrical Properties of High Density Through-Si Vias. 2 indexed citations
10.
Arnal, V., A. Farcy, V. Jousseaume, et al.. (2007). Materials and processes for high signal propagation performance and reliable 32 nm node BEOL. 1–3. 3 indexed citations
11.
Guedj, C., V. Arnal, R. Daamen, et al.. (2006). Spectral photoresponse of advanced interconnects: a possible solution to the ITRS most difficult characterization challenges. 45. 207–209. 1 indexed citations
12.
Gosset, L.G., V. Arnal, C. Prindle, et al.. (2004). General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material. 473. 65–67. 6 indexed citations
13.
Farcy, A., J. Torrès, V. Arnal, et al.. (2003). A new damascene architecture for high-performance metal–insulator–metal capacitors integration. Microelectronic Engineering. 70(2-4). 368–372. 15 indexed citations
14.
Morand, Y., M. Assous, M. Fayolle, et al.. (2002). Copper dual damascene integration using organic low k material: construction architecture comparison. 225–227. 1 indexed citations
15.
Fayolle, M., G. Passemard, M. Assous, et al.. (2002). Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect. Microelectronic Engineering. 60(1-2). 119–124. 18 indexed citations
16.
Charvolin, T., E. Hadji, Emmanuelle Picard, et al.. (2002). Realization of two-dimensional optical devices using photonic band gap structures on silicon-on-insulator. Microelectronic Engineering. 61-62. 545–548. 4 indexed citations
17.
18.
Chantre, A., M. Marty, J.L. Regolini, et al.. (1998). A highly manufacturable 0.35um SiGe HBT technology with 70GHz fmax. European Solid-State Device Research Conference. 448–451. 1 indexed citations
19.
Assous, M., et al.. (1998). Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1740–1744. 5 indexed citations
20.
Brenner, I. B., et al.. (1975). Direct Current (Central Plasma Region) Spectrochemical Analysis of Standard Silicate Rocks and Minerals. Applied Spectroscopy. 29(1). 82–85. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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