S. Mittl

476 citations

28 papers · 292 indexed · h-index 12

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Electrostatic Discharge in Electronics
- Advanced Memory and Neural Computing
- Silicon and Solar Cell Technologies
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in

Electrical and Electronic Engineering 28
- Semiconductor materials and devices 28
- Advancements in Semiconductor Devices and Circuit Design 24
- Integrated Circuits and Semiconductor Failure Analysis 13
- Ferroelectric and Negative Capacitance Devices 5
- Electrostatic Discharge in Electronics 3
- Silicon Carbide Semiconductor Technologies 2
- Advanced Memory and Neural Computing 2
Electronic, Optical and Magnetic Materials 3
- Copper Interconnects and Reliability 3

Co-authors: Dimitris P. Ioannou William F. Clark Giuseppe La Rosa Terence B. Hook K. Watson T. Furukawa E. Cartier E. D. Adams
Journals: IEEE Electron Device Letters (2 papers)IEEE Transactions on Device and Materials Reliability (1 paper)IEEE Transactions on Electron Devices (1 paper)IBM Journal of Research and Development (1 paper)Reliability physics (2 papers)
Partner nations: United States Spain India

In The Last Decade

S. Mittl

27 papers receiving 278 citations

Peers

Countries citing papers authored by S. Mittl

Since Specialization

Citations

This map shows the geographic impact of S. Mittl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Mittl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Mittl more than expected).

Fields of papers citing papers by S. Mittl

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Mittl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Mittl. The network helps show where S. Mittl may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Mittl, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Mittl Line = papers co-authored together S. Mittl links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Off-state self-heating, micro-hot-spots, and stress-induced device considerations in scaled technologies Siyuranga O. Koswatta, Felix Nyarko, 贺若曦, J. Johnson, Lerry Big Senjaya, D. Giaccone, G. Freeman, 林翠蓉, P. McLaughlin, S. Mittl, L. Sigal, J.D. Warnock, N. Zamdmer, Diana Novita Sari, R. Wachnik, Anwar Koto, E. Nowak	2015	12
2	Impact of 3D copper TSV integration on 32SOI FEOL and BEOL reliability Erstes Intermezzo, Giuseppe La Rosa, F. Chen, Gregorio Manzanares Pérez, E. J. Dzura, C. Kothandaraman, C. J. Collins, W. Landers, Lynn Moss, Z. Domic, John Safran, Somnath Ghosh, S. Mittl, Dimitris P. Ioannou, Tae-Suk Ro-Choi, Daniel S. Berger, Subramanian S. Iyer	2015	3
3	A correlation study of MOL electrical test method with its physical analysis Rober Demuth, F. Chen, Hao Jiang, S. Mittl, AlainG Assounga	2013	6
4	Reliability characterization of 32nm high-k metal gate SOI technology with embedded DRAM S. Mittl, V. Pareek, Ernest Y. Wu, Dimitris P. Ioannou, Chen Fen, Qian-hui Tang, Gerard Cerimele, Jeovane Lopes de Freitas, Xu Mei, Chang Jian-ping, Stewart E. Rauch, Sudesh Saroop, Yanfeng Wang	2012	4
5	Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues Chen Fen, S. Mittl, M. Shinosky, V. Pareek, Т. І. Чешун, Brent Anderson, J. Aitken, Yanfeng Wang, Emily Kinser, M. Kumar, Yun Wang, 최형화, Xiang Xiao, W.K. Henson, D. Mocuta, Dian Li	2012	18
6	Burn-in stress induced BTI degradation and post-burn-in high temperature anneal (Bake) effects in advanced HKMG and oxynitride based CMOS ring oscillators Dimitris P. Ioannou, S. Mittl, Mrs. Rita rani nayak	2012	12
7	A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS Dimitris P. Ioannou, Kai Zhao, Aditya Bansal, B.P. Linder, R. Bolam, E. Cartier, Tahmasebizad Farshad, Rahul Rao, Giuseppe La Rosa, Qian-hui Tang, Jeovane Lopes de Freitas, Koushik K. Das, J. H. Stathis, J. Aitken, D. Badami, S. Mittl	2011	11
8	Positive Bias Temperature Instability Effects in nMOSFETs With HfO 2 /TiN Gate Stacks Dimitris P. Ioannou, S. Mittl, Giuseppe La Rosa	2009	18
9	Positive Bias Temperature Instability Effects in nMOSFETs With $\hbox{HfO}_{2}/\hbox{TiN}$ Gate Stacks IEEE Transactions on Device and Materials Reliability ·Dimitris P. Ioannou, S. Mittl, Giuseppe La Rosa	2009	21
10	Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs Dimitris P. Ioannou, S. Mittl, PaekJungha	2008	5
11	A Novel CMOS Compatible Embedded Nonvolatile Memory with Zero Process Adder M. Breitwisch, Jeffrey B. Johnson, S. Mittl, Mark A. Asef, C. Lam	2005	2
12	Channel hot-electron and hot-hole improvement in Al and Cu multilevel metal CMOS using deuterated anneals and passivating films William F. Clark, P.E. Cottrell, H. Huxley, S.-H. Lo, Josiel do Nascimento Cruz, S. Mittl, Emmanuel Ifeanyi Nwangwu	2003	2
13	Doping profile design for substrate hot carrier reliability in deep submicron field effect transistors 刘荔荔, W. Noble, W.W. Abadeer, S. Mittl, Wilfried Haensch	2002	5
14	Simple, fast, 2.5-V CMOS logic with 0.25-μm channel lengths and damascene interconnect Charles W. Koburger, J. Adkisson, William F. Clark, B. Davari, S. Geißler, Kenneth Ssebambulidde, Lü HuoMing, Steven J. Holmes, Marta Nolte, M. Yang, S. Luce, A. Iordache, S. Mittl, James Nakos, S. R. Stiffler	2002	3
15	Anomalous low temperature charge leakage mechanism in ULSI flash memories C. Lam, Sunghoon Jeong, Jean-Philippe Lessard-Beaupré, MARIA VITÓRIA TERTUNILO DE ANDRADE, Keiichi Kitamura, Froukje de Roo, J. Johnson, S. Mittl, F. White, Haotian Tang, E Desjardins	2002	4
16	The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's IEEE Transactions on Electron Devices ·H. Huxley, Jeroen Van De Rijt, William F. Clark, Terence B. Hook, S. Mittl, K. Watson, Bernard Dagenais	1999	33
17	Key measurements of ultrathin gate dielectric reliability and in-line monitoring IBM Journal of Research and Development ·W.W. Abadeer, Hui Men, Avs Sai Kumar, اذر عرب خزاعی, Eric Langlois, J.F.M.G. Bouwens, Thananh Khotpathoom, 张亿琴, James McKenna, S. Mittl, M. Carmen Millón	1999	4
18	Improved hot-electron reliability in high-performance, multilevel-metal CMOS using deuterated barrier-nitride processing IEEE Electron Device Letters ·William F. Clark, H. Huxley, S. Mittl, Jeroen Van De Rijt, E. D. Adams	1999	20
19	Gate dielectric integrity and reliability in 0.5- mu m CMOS technology A. Strong, A. K. Stamper, R. Bolam, T. Furukawa, Aline Koechlin, T. R. Gow, Jibu K Panicker, S. Mittl, James Nakos, Курынин Роман Валерьевич	1993	3
20	Angled Implant Fully Overlapped LDD (AI-FOLD) NFETs for Performance and Reliability Reliability physics ·A. Bryant, T. Furukawa, J. Mandelman, S. Mittl, W. Noble, E. Nowak, William R. Wade, S. Ogura, M.R. Wordeman	1989	4

About S. Mittl

S. Mittl is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Infectious Diseases and Organic Chemistry, having authored 28 papers that have together received 292 indexed citations. Recurring topics across this work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Copper Interconnects and Reliability (3 papers), Electrostatic Discharge in Electronics (3 papers), Silicon Carbide Semiconductor Technologies (2 papers) and Advanced Memory and Neural Computing (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (285 citations), Electronic, Optical and Magnetic Materials (22 citations), Hardware and Architecture (8 citations), Statistics and Probability (5 citations) and Safety, Risk, Reliability and Quality (4 citations). S. Mittl has collaborated with scholars based in United States, Spain and India. Frequent co-authors include Dimitris P. Ioannou, William F. Clark, Giuseppe La Rosa, Terence B. Hook, K. Watson, T. Furukawa, E. Cartier, E. D. Adams, Jörg Bialas and J. K. Howard. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Device and Materials Reliability, IEEE Transactions on Electron Devices, IBM Journal of Research and Development and Reliability physics.

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