A. Bryant

552 total citations
21 papers, 332 citations indexed

About

A. Bryant is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. Bryant has authored 21 papers receiving a total of 332 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. Bryant's work include Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (18 papers) and Silicon Carbide Semiconductor Technologies (7 papers). A. Bryant is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (18 papers) and Silicon Carbide Semiconductor Technologies (7 papers). A. Bryant collaborates with scholars based in United States. A. Bryant's co-authors include W. Noble, Steven H. Voldman, Siyuranga O. Koswatta, E. Nowak, P.E. Cottrell, M. B. Ketchen, John Ellis-Monaghan, Jeffrey S. Brown, Wilfried Haensch and Bo Zhai and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Reliability physics.

In The Last Decade

A. Bryant

17 papers receiving 320 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Bryant United States	11	329	54	13	12	9	21	332
Xuemei Xi United States	10	382 1.2×	49 0.9×	28 2.2×	11 0.9×	14 1.6×	35	400
Samuel Tang United States	8	286 0.9×	43 0.8×	17 1.3×	7 0.6×	15 1.7×	10	306
I. Aller Germany	6	408 1.2×	43 0.8×	24 1.8×	10 0.8×	13 1.4×	7	417
M.M. Chowdhury United States	8	467 1.4×	48 0.9×	7 0.5×	15 1.3×	17 1.9×	12	477
Arka Dutta India	12	361 1.1×	57 1.1×	7 0.5×	12 1.0×	8 0.9×	38	404
M. Fulde Germany	11	345 1.0×	71 1.3×	9 0.7×	8 0.7×	6 0.7×	33	346
K. Petrarca United States	5	210 0.6×	43 0.8×	5 0.4×	8 0.7×	11 1.2×	6	212
M.M. Pelella United States	11	380 1.2×	33 0.6×	23 1.8×	18 1.5×	15 1.7×	45	395
Ming-Hung Han Taiwan	9	415 1.3×	87 1.6×	10 0.8×	14 1.2×	13 1.4×	18	421
A. Villaret France	7	175 0.5×	36 0.7×	5 0.4×	11 0.9×	20 2.2×	24	180

Countries citing papers authored by A. Bryant

Since Specialization

Citations

This map shows the geographic impact of A. Bryant's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Bryant with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Bryant more than expected).

Fields of papers citing papers by A. Bryant

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Bryant. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Bryant. The network helps show where A. Bryant may publish in the future.

Co-authorship network of co-authors of A. Bryant

This figure shows the co-authorship network connecting the top 25 collaborators of A. Bryant. A scholar is included among the top collaborators of A. Bryant based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Bryant. A. Bryant is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Paul, Abhijeet, Chun-Chen Yeh, T. Standaert, et al.. (2013). Fin width scaling for improved short channel control and performance in aggressively scaled channel length SOI finFETs. 1–2. 1 indexed citations

Koswatta, Siyuranga O., et al.. (2012). GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications. IEEE Electron Device Letters. 34(1). 6–8. 52 indexed citations

Lin, Chung-Hsun, Wilfried Haensch, Phil Oldiges, et al.. (2011). Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond. Symposium on VLSI Technology. 16–17. 22 indexed citations

Lin, Chung-Hsun, Josephine Chang, Michael Guillorn, et al.. (2010). Non-planar device architecture for 15nm node: FinFET or trigate?. 1–2. 13 indexed citations

Nayfeh, Hasan M., N. Rovedo, A. Bryant, et al.. (2009). Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs. IEEE Transactions on Electron Devices. 56(12). 3097–3105. 12 indexed citations

Hanson, Scott, Bo Zhai, David Blaauw, et al.. (2006). Energy optimality and variability in subthreshold design. 363–363. 31 indexed citations

Hanson, Scott, Bo Zhai, David Blaauw, et al.. (2006). Energy Optimality and Variability in Subthreshold Design. 10 indexed citations

Wang, Xinlin, et al.. (2006). Simulation Study on Channel Length Scaling of High Performance Partially Depleted Metal Gate and Poly Gate SOI MOSFETs. 283–286. 1 indexed citations

Yang, Min, J. Holt, Siddhartha Panda, et al.. (2005). Investigation of CMOS devices with embedded sige source/drain on hybrid orientation substrates. 28–29. 20 indexed citations

10.

Parries, P., Paihung Pan, W. Cote, et al.. (2003). A buried-plate trench cell for a 64-Mb DRAM. 14–15.

11.

Bryant, A., et al.. (2003). Angled implant fully overlapped LDD (AI-FOLD) NFETs for performance and reliability. 34. 152–157. 1 indexed citations

12.

Bryant, A., Jeffrey S. Brown, P.E. Cottrell, et al.. (2002). Low-power CMOS at Vdd=4kT/q. 22–23. 65 indexed citations

13.

Bryant, A., et al.. (1993). The current-carrying corner inherent to trench isolation. IEEE Electron Device Letters. 14(8). 412–414. 27 indexed citations

14.

Bryant, A., et al.. (1992). A fundamental performance limit of optimized 3.3-V sub-quarter-micrometer fully overlapped LDD MOSFET's. IEEE Transactions on Electron Devices. 39(5). 1208–1215. 13 indexed citations

15.

Bryant, A., et al.. (1990). A fundamental performance limit of optimized 3.3 V subquarter micron fully overlapped LDD MOSFETs. 45–46. 7 indexed citations

16.

Noble, W., Steven H. Voldman, & A. Bryant. (1989). The effects of gate field on the leakage characteristics of heavily doped junctions. IEEE Transactions on Electron Devices. 36(4). 720–726. 32 indexed citations

17.

Bryant, A., T. Furukawa, J. Mandelman, et al.. (1989). Angled Implant Fully Overlapped LDD (AI-FOLD) NFETs for Performance and Reliability. Reliability physics. 152–157. 4 indexed citations

18.

Noble, W., A. Bryant, & Steven H. Voldman. (1987). Parasitic leakage in DRAM trench storage capacitor vertical gated diodes. 340–343. 13 indexed citations

19.

Voldman, Steven H., A. Bryant, & W. Noble. (1987). IVB-4 vertical storage trench gated diode leakage. IEEE Transactions on Electron Devices. 34(11). 2373–2373. 8 indexed citations

20.

Bryant, A.. (1986). High-Speed Imaging with the Scanning Tunneling Microscope.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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