B. Davari

2.2k total citations
67 papers, 1.3k citations indexed

About

B. Davari is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, B. Davari has authored 67 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 11 papers in Biomedical Engineering. Recurrent topics in B. Davari's work include Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Integrated Circuits and Semiconductor Failure Analysis (29 papers). B. Davari is often cited by papers focused on Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Integrated Circuits and Semiconductor Failure Analysis (29 papers). B. Davari collaborates with scholars based in United States, Japan and France. B. Davari's co-authors include G. Shahidi, R.H. Dennard, Yuan Taur, M.R. Wordeman, P. Das, J.Y.-C. Sun, Chen-Hsuan Hsu, Wei‐Hsu Chang, D.S. Zicherman and Ching-Fang Hsu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

B. Davari

66 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Davari United States 18 1.3k 199 197 111 63 67 1.3k
K. Mistry United States 22 2.2k 1.7× 324 1.6× 191 1.0× 185 1.7× 177 2.8× 56 2.3k
C. Wann United States 19 1.6k 1.3× 246 1.2× 257 1.3× 55 0.5× 148 2.3× 59 1.7k
C.T. Chuang United States 16 942 0.7× 239 1.2× 116 0.6× 59 0.5× 36 0.6× 112 1000
Y. Toyoshima Japan 16 834 0.7× 138 0.7× 137 0.7× 50 0.5× 52 0.8× 97 864
T. Horiuchi Japan 12 764 0.6× 66 0.3× 79 0.4× 70 0.6× 52 0.8× 51 820
C. W. Gwyn United States 11 547 0.4× 91 0.5× 119 0.6× 72 0.6× 66 1.0× 24 669
S. Odanaka Japan 17 700 0.6× 74 0.4× 88 0.4× 32 0.3× 47 0.7× 74 742
D. Auvergne France 19 912 0.7× 152 0.8× 455 2.3× 170 1.5× 221 3.5× 74 1.1k
M. Kakumu Japan 13 738 0.6× 134 0.7× 43 0.2× 122 1.1× 31 0.5× 58 783
Natalia Seoane Spain 19 1.2k 0.9× 288 1.4× 197 1.0× 22 0.2× 66 1.0× 91 1.2k

Countries citing papers authored by B. Davari

Since Specialization
Citations

This map shows the geographic impact of B. Davari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Davari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Davari more than expected).

Fields of papers citing papers by B. Davari

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Davari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Davari. The network helps show where B. Davari may publish in the future.

Co-authorship network of co-authors of B. Davari

This figure shows the co-authorship network connecting the top 25 collaborators of B. Davari. A scholar is included among the top collaborators of B. Davari based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Davari. B. Davari is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shahidi, G., B. Davari, T. Bucelot, et al.. (2003). A high performance low temperature 0.3 mu m CMOS on SIMOX. 106–107. 1 indexed citations
2.
Davari, B., Wei‐Hsu Chang, M.R. Wordeman, et al.. (2003). A high performance 0.25 mu m CMOS technology. 34. 56–59. 5 indexed citations
3.
Leobandung, E., M. Sherony, R. Schulz, et al.. (2003). High performance 0.18 μm SOI CMOS technology. 679–682. 9 indexed citations
4.
Davari, B., R.H. Dennard, & G. Shahidi. (2002). CMOS technology for low voltage/low power applications. 3–10. 1 indexed citations
5.
Leobandung, E., M. Sherony, J.W. Sleight, et al.. (2002). Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation. 403–406. 19 indexed citations
6.
Assaderaghi, F., W. Rausch, A. Ajmera, et al.. (2002). A 7.9/5.5 psec room/low temperature SOI CMOS. 415–418. 19 indexed citations
7.
Crowder, S., S. R. Stiffler, P. Parries, et al.. (2002). Trade-offs in the integration of high performance devices with trench capacitor DRAM. 45–48. 9 indexed citations
8.
Assaderaghi, F., G. Shahidi, M. Hargrove, et al.. (2002). History dependence of non-fully depleted (NFD) digital SOI circuits. 122–123. 7 indexed citations
9.
Takahashi, Osamu, S.H. Dhong, R.H. Dennard, et al.. (2000). WP 24.3 1GHz Fully Pipelined 3.7ns Address Access Time 8kx1024 Embedded DRAM Macro. 3 indexed citations
10.
Ajmera, A., J.W. Sleight, F. Assaderaghi, et al.. (1999). A 0.22 /spl mu/m CMOS-SOI technology with a Cu BEOL. 15–16. 5 indexed citations
11.
Assaderaghi, F., G. Shahidi, L. Wagner, et al.. (1996). Accurate measurement of pass-transistor leakage current in SOI MOSFET's. 66–67. 6 indexed citations
12.
Taur, Yuan, et al.. (1993). Saturation transconductance of deep-submicron-channel MOSFETs. Solid-State Electronics. 36(8). 1085–1087. 13 indexed citations
13.
Shahidi, G., B. Davari, T. Bucelot, et al.. (1993). Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs. IEEE Electron Device Letters. 14(8). 409–411. 59 indexed citations
14.
Wong, C. Y., et al.. (1988). Doping of n+ and p+ polysilicon in a dual-gate CMOS process. 238–241. 45 indexed citations
15.
Ganin, E., B. Davari, D.L. Harame, G. Scilla, & G.A. Sai-Halasz. (1988). Formation of Shallow Boron P+ Junctions Using Sb Amorphization. MRS Proceedings. 128. 1 indexed citations
16.
Davari, B., C. Y. Ting, K. Y. Ahn, et al.. (1987). Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide. Symposium on VLSI Technology. 61–62. 6 indexed citations
17.
Davari, B. & P. Das. (1985). Transient Behavior of Transverse Acoustoelectric Voltage and Nondestructive Characterization of Semiconductor Surfaces. IEEE Transactions on Sonics and Ultrasonics. 32(5). 778–790. 7 indexed citations
18.
Davari, B. & P. Das. (1984). <title>Semiconductor Characterization Using Nondestructive Surface Acoustic Wave Technique</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 452. 146–155. 4 indexed citations
19.
Davari, B., et al.. (1982). Semiconductor surface studies with SAW-oscillator structures. Electronics Letters. 18(25-26). 1065–1066. 1 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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