B.P. Linder

2.8k citations

85 papers · 1.8k indexed · h-index 22

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 76
- Advancements in Semiconductor Devices and Circuit Design 60
- Integrated Circuits and Semiconductor Failure Analysis 37
- Ferroelectric and Negative Capacitance Devices 19
- Silicon Carbide Semiconductor Technologies 6
Hardware and Architecture top 10%
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 13
Materials Chemistry
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 4
Mechanics of Materials
- Metal and Thin Film Mechanics 7

Co-authors: J. H. Stathis S. Lombardo Chih Hang Tung Félix Palumbo K. L. Pey E. Cartier Vijay Narayanan R. Rodrı́guez
Cited by: Electrical and Electronic Engineering Hardware and Architecture Electronic, Optical and Magnetic Materials
Journals: IEEE Electron Device Letters (6 papers)Microelectronic Engineering (5 papers)Microelectronics Reliability (3 papers)
Partner nations: United States Spain Italy

In The Last Decade

B.P. Linder

83 papers receiving 1.8k citations

Peers

Countries citing papers authored by B.P. Linder

Since Specialization

Citations

This map shows the geographic impact of B.P. Linder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.P. Linder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.P. Linder more than expected).

Fields of papers citing papers by B.P. Linder

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.P. Linder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.P. Linder. The network helps show where B.P. Linder may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B.P. Linder, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B.P. Linder Line = papers co-authored together B.P. Linder links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Transformation of Ramped Current Stress V_BDto Constant Voltage Stress TDDB T_BD Andrew Kim,Ernest Y. Wu,Baozhen Li,B.P. Linder	2019	6
2	Differentiated Performance and Reliability Enabled by Multi-Work Function Solution in RMG Silicon and SiGe MOSFETs R. Bao,Richard G. Southwick,Hualan Zhou,Mario Camperos Castro,B.P. Linder,Tetsuo Ando,Dechao Guo,H. Jagannathan,Vijay Narayanan	2018	6
3	Electromigration characteristics of power grid like structures Baozhen Li,Majela Guzmán Gómez,P. McLaughlin,B.P. Linder,C. Christiansen	2018	5
4	Fundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applications Ernest Y. Wu,J. H. Stathis,Baozhen Li,Majela Guzmán Gómez,B.P. Linder,R. Bolam,Griselda Bonilla	2016	1
5	Performance Degradation Analysis and Hot-Carrier Injection Impact on the Lifetime Prediction of <inline-formula> <tex-math notation="LaTeX">$LC$ </tex-math></inline-formula> Voltage Control Oscillator IEEE Transactions on Electron Devices ·Chih‐Hsiang Ho,K.A. Jenkins,H. Ainspan,Atul Aneja,B.P. Linder,Peilin Song	2015	12
6	Combined Ramp Voltage Stress and Constant Voltage Stress for optimal BTI voltage acceleration and lifetime modeling B.P. Linder,Takashi Ando	2014	5
7	Superior PBTI Reliability for SOI FinFET Technologies and Its Physical Understanding IEEE Electron Device Letters ·Miaomiao Wang,Lida Marcela Salazar Sanabria,J. H. Stathis,B.P. Linder,Hemanth Jagannathan,J. Faltermeier	2013	18
8	PBTI/NBTI monitoring ring oscillator circuits with on-chip Vt characterization and high frequency AC stress capability Jae‐Joon Kim,Rahul Rao,J.D. Schaub,F Moussion,Aditya Bansal,Kai Zhao,B.P. Linder,J. H. Stathis	2011	10
9	Impact of TDDB in MG/HK devices on circuit functionality in advanced CMOS technologies A. Kerber,S. ABBERGER,Martin Trentzsch,B.P. Linder,K.H.T	2011	1
10	The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability B.P. Linder,E. Cartier,Siddarth Krishnan,J. H. Stathis,A. Kerber	2009	13
11	Interfacial layer optimization of high-k/metal gate stacks for low temperature processing Microelectronic Engineering ·B.P. Linder,Vijay Narayanan,E. Cartier	2009	7
12	Band Edge High-κ/Metal Gate n-MOSFETs Using Ultra Thin Capping Layers Vamsi Paruchuri,Vijay Narayanan,B.P. Linder,S. Brown,V Buff,林芳玫,P. Ronsheim,R. Jammy,Ceri Learning	2007	3
13	Charge Defects, Vt Shifts, and the Solution to the High-K Metal Gate n-MOSFET Problem ECS Transactions ·Supratik Guha,Vijay Narayanan,Vamsi Paruchuri,B.P. Linder,M. Copel,N. A. Bojarczuk,Younghee Kim,M. Chudzik,Yun Wang,P. Ronsheim	2006	2
14	Statistics of progressive breakdown in ultra-thin oxides Microelectronic Engineering ·B.P. Linder,J. H. Stathis	2004	31
15	Breakdown transients in ultra-thin gate oxynitrides S. Lombardo,Félix Palumbo,J. H. Stathis,B.P. Linder,K. L. Pey,Ching‐Hsuan Tung	2004	1
16	Characterization of breakdown in ultrathin oxides by hot carrier emission Applied Physics Letters ·J. C. Tsang,B.P. Linder	2004	7
17	Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate Physical Review Letters ·S. Lombardo,J. H. Stathis,B.P. Linder	2003	43
18	Gate oxide breakdown under Current Limited Constant Voltage Stress B.P. Linder,J. H. Stathis,R. Wachnik,Ernest Y. Wu,S. A. Cohen,乔永峰,A. Vayshenker	2002	66
19	Calculating the error in long term oxide reliability estimates B.P. Linder,J. H. Stathis,D.J. Frank	2002	13
20	Multiple species implants with pulsed and DC plasma immersion ion implantation B.P. Linder,Милашевская Ирина Владимировна,N.W. Cheung	2002	2

About B.P. Linder

B.P. Linder is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 85 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (76 papers), Advancements in Semiconductor Devices and Circuit Design (60 papers), Integrated Circuits and Semiconductor Failure Analysis (37 papers), Ferroelectric and Negative Capacitance Devices (19 papers), Copper Interconnects and Reliability (13 papers), Metal and Thin Film Mechanics (7 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Semiconductor materials and interfaces (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Hardware and Architecture (52 citations) and Electronic, Optical and Magnetic Materials (120 citations). B.P. Linder has collaborated with scholars based in United States, Spain and Italy. Frequent co-authors include J. H. Stathis, S. Lombardo, Chih Hang Tung, Félix Palumbo, K. L. Pey, E. Cartier, Vijay Narayanan, R. Rodrı́guez, A. Vayshenker and N.W. Cheung. Their work appears in journals such as IEEE Electron Device Letters, Microelectronic Engineering, Microelectronics Reliability, Applied Physics Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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