B.P. Linder

2.8k total citations
85 papers, 1.8k citations indexed

About

B.P. Linder is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, B.P. Linder has authored 85 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 82 papers in Electrical and Electronic Engineering, 13 papers in Electronic, Optical and Magnetic Materials and 9 papers in Materials Chemistry. Recurrent topics in B.P. Linder's work include Semiconductor materials and devices (76 papers), Advancements in Semiconductor Devices and Circuit Design (60 papers) and Integrated Circuits and Semiconductor Failure Analysis (37 papers). B.P. Linder is often cited by papers focused on Semiconductor materials and devices (76 papers), Advancements in Semiconductor Devices and Circuit Design (60 papers) and Integrated Circuits and Semiconductor Failure Analysis (37 papers). B.P. Linder collaborates with scholars based in United States, Spain and Italy. B.P. Linder's co-authors include J. H. Stathis, S. Lombardo, Félix Palumbo, Chih Hang Tung, K. L. Pey, E. Cartier, Vijay Narayanan, R. Rodrı́guez, N.W. Cheung and A. Vayshenker and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B.P. Linder

83 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B.P. Linder United States 22 1.8k 251 150 120 72 85 1.8k
M. Toledano-Luque Belgium 26 1.9k 1.1× 384 1.5× 204 1.4× 95 0.8× 32 0.4× 101 2.0k
Michel Depas Belgium 13 1.6k 0.9× 399 1.6× 261 1.7× 128 1.1× 27 0.4× 27 1.6k
H. Hada Japan 20 1.1k 0.6× 216 0.9× 239 1.6× 114 0.9× 23 0.3× 107 1.2k
Khaled Ahmed United States 20 1.5k 0.9× 435 1.7× 218 1.5× 69 0.6× 73 1.0× 69 1.7k
Joo Tae Moon South Korea 15 683 0.4× 371 1.5× 71 0.5× 125 1.0× 57 0.8× 61 806
R. Bellens Belgium 13 1.6k 0.9× 243 1.0× 75 0.5× 117 1.0× 22 0.3× 40 1.6k
Bich-Yen Nguyen France 19 1.3k 0.8× 355 1.4× 96 0.6× 88 0.7× 41 0.6× 119 1.4k
G. Reimbold France 22 2.1k 1.2× 326 1.3× 275 1.8× 185 1.5× 55 0.8× 214 2.2k
Chenming Hu United States 22 1.9k 1.1× 260 1.0× 242 1.6× 128 1.1× 39 0.5× 64 2.0k
T. Sugii Japan 21 1.3k 0.7× 139 0.6× 221 1.5× 57 0.5× 20 0.3× 116 1.3k

Countries citing papers authored by B.P. Linder

Since Specialization
Citations

This map shows the geographic impact of B.P. Linder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.P. Linder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.P. Linder more than expected).

Fields of papers citing papers by B.P. Linder

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.P. Linder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.P. Linder. The network helps show where B.P. Linder may publish in the future.

Co-authorship network of co-authors of B.P. Linder

This figure shows the co-authorship network connecting the top 25 collaborators of B.P. Linder. A scholar is included among the top collaborators of B.P. Linder based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B.P. Linder. B.P. Linder is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Andrew, Ernest Y. Wu, Baozhen Li, & B.P. Linder. (2019). Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD. 1–5. 6 indexed citations
2.
Bao, R., Richard G. Southwick, Hualan Zhou, et al.. (2018). Differentiated Performance and Reliability Enabled by Multi-Work Function Solution in RMG Silicon and SiGe MOSFETs. 115–116. 6 indexed citations
3.
Li, Baozhen, et al.. (2018). Electromigration characteristics of power grid like structures. 4F.3–1. 5 indexed citations
4.
Wu, Ernest Y., J. H. Stathis, Baozhen Li, et al.. (2016). Fundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applications. 49. 3A–1. 1 indexed citations
5.
6.
7.
Wang, Miaomiao, et al.. (2013). Superior PBTI Reliability for SOI FinFET Technologies and Its Physical Understanding. IEEE Electron Device Letters. 34(7). 837–839. 18 indexed citations
8.
Kerber, A., et al.. (2011). Impact of TDDB in MG/HK devices on circuit functionality in advanced CMOS technologies. 42. 18.1.1–18.1.4. 1 indexed citations
9.
Kim, Jae‐Joon, Rahul Rao, J.D. Schaub, et al.. (2011). PBTI/NBTI monitoring ring oscillator circuits with on-chip Vt characterization and high frequency AC stress capability. 224–225. 10 indexed citations
10.
Linder, B.P., Vijay Narayanan, & E. Cartier. (2009). Interfacial layer optimization of high-k/metal gate stacks for low temperature processing. Microelectronic Engineering. 86(7-9). 1632–1634. 7 indexed citations
11.
Linder, B.P., E. Cartier, Siddarth Krishnan, J. H. Stathis, & A. Kerber. (2009). The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability. 510–513. 13 indexed citations
12.
Paruchuri, Vamsi, Vijay Narayanan, B.P. Linder, et al.. (2007). Band Edge High-κ/Metal Gate n-MOSFETs Using Ultra Thin Capping Layers. 1–2. 3 indexed citations
13.
Guha, Supratik, Vijay Narayanan, Vamsi Paruchuri, et al.. (2006). Charge Defects, Vt Shifts, and the Solution to the High-K Metal Gate n-MOSFET Problem. ECS Transactions. 3(2). 247–252. 2 indexed citations
14.
Linder, B.P. & J. H. Stathis. (2004). Statistics of progressive breakdown in ultra-thin oxides. Microelectronic Engineering. 72(1-4). 24–28. 31 indexed citations
15.
Lombardo, S., Félix Palumbo, J. H. Stathis, et al.. (2004). Breakdown transients in ultra-thin gate oxynitrides. 77. 355–362. 1 indexed citations
16.
Tsang, J. C. & B.P. Linder. (2004). Characterization of breakdown in ultrathin oxides by hot carrier emission. Applied Physics Letters. 84(23). 4641–4643. 7 indexed citations
17.
Lombardo, S., J. H. Stathis, & B.P. Linder. (2003). Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate. Physical Review Letters. 90(16). 167601–167601. 43 indexed citations
18.
Linder, B.P., J. H. Stathis, R. Wachnik, et al.. (2002). Gate oxide breakdown under Current Limited Constant Voltage Stress. 214–215. 66 indexed citations
19.
Linder, B.P., et al.. (2002). Multiple species implants with pulsed and DC plasma immersion ion implantation. 2. 1179–1182. 2 indexed citations
20.
Linder, B.P., J. H. Stathis, & D.J. Frank. (2002). Calculating the error in long term oxide reliability estimates. 168–171. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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