F. Nouri

714 total citations
28 papers, 524 citations indexed

About

F. Nouri is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Mechanical Engineering. According to data from OpenAlex, F. Nouri has authored 28 papers receiving a total of 524 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 3 papers in Biomedical Engineering and 2 papers in Mechanical Engineering. Recurrent topics in F. Nouri's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). F. Nouri is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). F. Nouri collaborates with scholars based in United States, Belgium and India. F. Nouri's co-authors include Khaled Ahmed, Souvik Mahapatra, Victor Moroz, Lee Smith, Dhanoop Varghese, Dipankar Saha, Geert Eneman, J. Lutze, M. Rubı́n and Peter Verheyen and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

F. Nouri

25 papers receiving 492 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Nouri United States 11 507 58 43 28 16 28 524
M.R. Polcari United States 12 459 0.9× 42 0.7× 72 1.7× 16 0.6× 15 0.9× 22 468
N. Ikezawa Japan 9 313 0.6× 64 1.1× 23 0.5× 32 1.1× 19 1.2× 16 328
Shiying Xiong United States 5 419 0.8× 65 1.1× 30 0.7× 23 0.8× 15 0.9× 5 435
C. Kerner Belgium 11 347 0.7× 40 0.7× 63 1.5× 26 0.9× 7 0.4× 33 360
C. Ortolland Belgium 11 380 0.7× 55 0.9× 61 1.4× 21 0.8× 10 0.6× 37 392
F. Allain France 13 549 1.1× 78 1.3× 29 0.7× 25 0.9× 14 0.9× 36 559
Andrew R. Brown United Kingdom 9 284 0.6× 51 0.9× 43 1.0× 9 0.3× 13 0.8× 23 294
F. Andrieu France 15 803 1.6× 94 1.6× 52 1.2× 50 1.8× 11 0.7× 60 810
R.J.P. Lander Belgium 11 300 0.6× 43 0.7× 55 1.3× 16 0.6× 3 0.2× 24 312
N. Rovedo United States 10 394 0.8× 46 0.8× 27 0.6× 34 1.2× 5 0.3× 20 396

Countries citing papers authored by F. Nouri

Since Specialization
Citations

This map shows the geographic impact of F. Nouri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Nouri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Nouri more than expected).

Fields of papers citing papers by F. Nouri

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Nouri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Nouri. The network helps show where F. Nouri may publish in the future.

Co-authorship network of co-authors of F. Nouri

This figure shows the co-authorship network connecting the top 25 collaborators of F. Nouri. A scholar is included among the top collaborators of F. Nouri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Nouri. F. Nouri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nouri, F., et al.. (2023). Partial Least Squares Method for the Multicomponent Analysis of Antibacterial Mixture. 18(2). 92–100. 2 indexed citations
2.
Nouri, F., et al.. (2021). Mathematical and numerical results for quality control of hot metal in blast furnace. 11(3). 2914–2933. 1 indexed citations
3.
González, Mireia Bargalló, Geert Eneman, Peter Verheyen, et al.. (2006). Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions. 97. 1–2. 1 indexed citations
4.
Felch, Susan B., S. Severi, E. Augendre, et al.. (2006). Ultra-Shallow Junctions Formed By Sub-Melt Laser Annealing. AIP conference proceedings. 866. 129–132. 1 indexed citations
5.
Gupta, Gaurav, et al.. (2006). Interface-Trap Driven NBTI for Ultrathin (EOT~12�) Plasma and Thermal Nitrided Oxynitrides. DSpace (IIT Bombay). 5776. 731–732. 11 indexed citations
6.
Nouri, F., Geert Eneman, Peter Verheyen, et al.. (2006). pMOSFET with 200% mobility enhancement induced by multiple stressors. IEEE Electron Device Letters. 27(6). 511–513. 58 indexed citations
7.
8.
Severi, S., E. Augendre, C. Kerner, et al.. (2006). NMOS and PMOS Metal Gate Transistors with Junctions Activated by Laser Annealing. 1–2. 1 indexed citations
9.
Moroz, Victor, Geert Eneman, F. Nouri, et al.. (2005). The Impact of Layout on Stress-Enhanced Transistor Performance. 143–146. 30 indexed citations
10.
Felch, Susan B., et al.. (2005). 90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 53–57. 1 indexed citations
11.
Verheyen, Peter, R. Rooyackers, F. Nouri, et al.. (2005). Layout impact on the performance of a locally strained PMOSFET. 22–23. 34 indexed citations
12.
Smith, Lee, Victor Moroz, Geert Eneman, et al.. (2005). Exploring the limits of stress-enhanced hole mobility. IEEE Electron Device Letters. 26(9). 652–654. 54 indexed citations
13.
14.
Nouri, F., et al.. (2004). Trends in gate stack engineering. 50. 275–281.
15.
Forstner, H., F. Nouri, & Chris Olsen. (2004). In-situ steam generation for shallow trench isolation in sub-100 nm devices. 163–166. 6 indexed citations
16.
17.
Ahmed, Khaled, et al.. (2003). Observation of nitrogen-enhanced doping deactivation at the polysilicon-oxynitride interface of pMOSFETs with 12-/spl Aring/ gate dielectrics. IEEE Electron Device Letters. 24(7). 445–447. 2 indexed citations
18.
19.
Saha, Samar K., et al.. (1999). Interface Interstitial Recombination Rate and the Reverse Short Channel Effect. MRS Proceedings. 568. 1 indexed citations
20.
Nouri, F., et al.. (1992). Hot-electron-induced input offset voltage degradation in CMOS differential amplifiers. 76–80. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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