Jeffrey B. Johnson

662 total citations
49 papers, 431 citations indexed

About

Jeffrey B. Johnson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Jeffrey B. Johnson has authored 49 papers receiving a total of 431 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in Jeffrey B. Johnson's work include Advancements in Semiconductor Devices and Circuit Design (32 papers), Semiconductor materials and devices (28 papers) and Radio Frequency Integrated Circuit Design (14 papers). Jeffrey B. Johnson is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (32 papers), Semiconductor materials and devices (28 papers) and Radio Frequency Integrated Circuit Design (14 papers). Jeffrey B. Johnson collaborates with scholars based in United States, India and Germany. Jeffrey B. Johnson's co-authors include Terence B. Hook, Alvin Joseph, S. Furkay, D.L. Harame, Daniel C. Cole, Mohit Bajaj, Samarth Agarwal, R. K. Pandey, Nauman Zafar Butt and K. V. R. M. Murali and has published in prestigious journals such as Journal of Applied Physics, IEEE Journal of Solid-State Circuits and Applied Surface Science.

In The Last Decade

Jeffrey B. Johnson

44 papers receiving 411 citations

Peers

Countries citing papers authored by Jeffrey B. Johnson

Since Specialization

Citations

This map shows the geographic impact of Jeffrey B. Johnson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jeffrey B. Johnson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jeffrey B. Johnson more than expected).

Fields of papers citing papers by Jeffrey B. Johnson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jeffrey B. Johnson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jeffrey B. Johnson. The network helps show where Jeffrey B. Johnson may publish in the future.

Co-authorship network of co-authors of Jeffrey B. Johnson

This figure shows the co-authorship network connecting the top 25 collaborators of Jeffrey B. Johnson. A scholar is included among the top collaborators of Jeffrey B. Johnson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jeffrey B. Johnson. Jeffrey B. Johnson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Design of PNP SiGe HBTs Towards 200 GHz f_max 2024 ·ECS Transactions ·(unknown), Steven M. Shank, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Jeffrey B. Johnson, (unknown), Vibhor Jain, John J. Pekarik	0
2	415/610GHz f_T/f_MAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process 2022 ·2022 International Electron Devices Meeting (IEDM) ·Vibhor Jain, John J. Pekarik, (unknown), J. Holt, Chris Durcan, Jeffrey B. Johnson, Sudesh Saroop, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Alvin Joseph	8
3	Two-dimensional dopant potential mapping in a fin field effect transistor by off-axis electron holography 2022 ·Journal of Applied Physics ·M. Gribelyuk, S. Mehta, Jeffrey B. Johnson, (unknown)	1
4	FinFET LDMOS technology challenges and opportunities for digital TV and 6GHz WiFi PA applications 2021 ·Symposium on VLSI Technology ·Jagar Singh, S. Cimino, Jeffrey B. Johnson, (unknown), (unknown), (unknown), (unknown), (unknown), Huosheng Hu, (unknown), (unknown), (unknown), (unknown), Randy Wolf, (unknown), Andreas Knorr, (unknown), Alvin Joseph, (unknown)	4
5	High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs 2019 ·(unknown), D.P. Brunco, Sanjay Raman, Dina H. Triyoso, M. W. Stoker, Jeffrey B. Johnson, L. Pantisano, (unknown), (unknown), A. Reznicek, R. Krishnan, (unknown), James Freeman, (unknown), (unknown)	13
6	Multi-pulse diode-isolated-Blumlein induction-cell drivers 2017 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Chris Rose, M. Crawford, (unknown), (unknown), Jeffrey B. Johnson, (unknown), J. M. Taccetti	1
7	Finite element based three dimensional Schrödinger solver for nano-scale devices 2014 ·Journal of Computational Electronics ·Samarth Agarwal, (unknown), Mohit Bajaj, Jeffrey B. Johnson, S. Furkay, Phil Oldiges, K. V. R. M. Murali	1
8	Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs 2013 ·(unknown), A. Bryant, Terence B. Hook, Chun-Chen Yeh, V. Kamineni, Jeffrey B. Johnson, Neeraj Tripathi, T. Yamashita, Gen Tsutsui, V. Basker, T. Standaert, J. Faltermeier, B. Haran, S. Kanakasabapathy, H. Bu, (unknown), (unknown), Mukesh Khare	26
9	Understanding the Effects of Epitaxy Artifacts on SiGe HBT Performance through Detailed Process/Device Simulation 2013 ·ECS Transactions ·(unknown), Jeffrey B. Johnson, (unknown), Peng Cheng, J. Adkisson, D.L. Harame	1
10	Fin width scaling for improved short channel control and performance in aggressively scaled channel length SOI finFETs 2013 ·Abhijeet Paul, Chun-Chen Yeh, T. Standaert, Jeffrey B. Johnson, A. Bryant, Neeraj Tripathi, Gen Tsutsui, (unknown), V. Basker, (unknown), Jin Cho, Huiming Bu, Mukesh Khare	1
11	Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation 2010 ·IEEE Electron Device Letters ·Soon‐Cheon Seo, C.-C. Yang, Miaomiao Wang, F. Monsieur, (unknown), Jeffrey B. Johnson, (unknown), (unknown), Kangguo Cheng, J. H. Stathis, B. Doris	5
12	Channel Length and Threshold Voltage Dependence of Transistor Mismatch in a 32-nm HKMG Technology 2010 ·IEEE Transactions on Electron Devices ·Terence B. Hook, Jeffrey B. Johnson, Jin‐Ping Han, (unknown), (unknown), Gen Tsutsui	13
13	Analysis and Modeling of Threshold Voltage Mismatch for CMOS at 65 nm and Beyond 2008 ·IEEE Electron Device Letters ·Jeffrey B. Johnson, Terence B. Hook, (unknown)	31
14	Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD 2003 ·Applied Surface Science ·(unknown), Jeffrey B. Johnson, G. Freeman, Jae-Sung Rieh	3
15	Parasitic modeling and noise mitigation in advanced RF/mixed-signal silicon germanium processes 2003 ·IEEE Transactions on Electron Devices ·Raminderpal Singh, (unknown), Jeffrey B. Johnson, Susan L. Sweeney, Robert Barry, M. Kumar, (unknown), J. Katzenstein, (unknown), D.L. Harame	8
16	A technology simulation methodology for AC-performance optimization of SiGe HBTs 2002 ·Jeffrey B. Johnson, Andy Stricker, Alvin Joseph, J. Slinkman	10
17	30 GHz polysilicon-emitter and single-crystal-emitter graded SiGe-base PNP transistors 2002 ·D.L. Harame, J.M.C. Stork, B.S. Meyerson, E.F. Crabbé, G. Scilla, E. de Frésart, (unknown), C. Stanis, G.L. Patton, J.H. Comfort, A. A. Bright, Jeffrey B. Johnson, S. Furkay	1
18	A Fully-Manufacturable 0.5?m SiGe BiCMOS Technology for Wireless Power Amplifier Applications 2002 ·V. Ramachandran, Alvin Joseph, Jeffrey B. Johnson, Matt Gallagher, (unknown), (unknown), D. Greenberg, W.E. Ansley, (unknown), D.L. Harame, J. Dunn	5
19	DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR DEVICES WITH APPLICATION TO MODELING TRENCH‐DRAM CELLS 1991 ·COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering ·Jeffrey B. Johnson, Steven H. Voldman, T. Linton	4
20	The use of simulation in semiconductor technology development 1990 ·Solid-State Electronics ·Daniel C. Cole, E. M. Buturla, S. Furkay, Kody Varahramyan, J. Slinkman, J. Mandelman, Daniel Foty, (unknown), A. Strong, (unknown), T. Linton, Jeffrey B. Johnson, Massimo V. Fischetti, S.E. Laux, P.E. Cottrell, (unknown), (unknown), (unknown)	23

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact