W. Noble

438 total citations
20 papers, 294 citations indexed

About

W. Noble is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Computer Vision and Pattern Recognition. According to data from OpenAlex, W. Noble has authored 20 papers receiving a total of 294 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 1 paper in Computer Networks and Communications and 1 paper in Computer Vision and Pattern Recognition. Recurrent topics in W. Noble's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Silicon Carbide Semiconductor Technologies (9 papers). W. Noble is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Silicon Carbide Semiconductor Technologies (9 papers). W. Noble collaborates with scholars based in United States and South Sudan. W. Noble's co-authors include A. Bryant, Steven H. Voldman, P.E. Cottrell, William W. Walker, J. Lindmayer, H.I. Hanafi, S. Dash, D.L. Critchlow, Y. T. Lii and Winston J. Craig and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

W. Noble

19 papers receiving 280 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Noble United States 11 286 23 19 11 9 20 294
M.Y. Lau United States 8 219 0.8× 23 1.0× 17 0.9× 17 1.5× 23 2.6× 24 236
S. Geißler United States 10 258 0.9× 51 2.2× 8 0.4× 20 1.8× 17 1.9× 19 272
Andrei Shibkov United States 6 283 1.0× 21 0.9× 29 1.5× 4 0.4× 6 0.7× 32 288
Gi-Yong Yang South Korea 7 329 1.2× 43 1.9× 32 1.7× 14 1.3× 20 2.2× 19 350
H. Katto Japan 10 255 0.9× 10 0.4× 36 1.9× 4 0.4× 19 2.1× 34 262
S. Rangan United States 7 322 1.1× 22 1.0× 16 0.8× 3 0.3× 7 0.8× 12 323
D. Schepis United States 9 166 0.6× 22 1.0× 12 0.6× 3 0.3× 18 2.0× 16 171
Yasufumi Hino United States 6 251 0.9× 21 0.9× 15 0.8× 25 2.3× 16 1.8× 6 267
K. Kanzaki Japan 11 326 1.1× 53 2.3× 20 1.1× 15 1.4× 24 2.7× 32 338
Andrew R. Brown United Kingdom 9 284 1.0× 13 0.6× 43 2.3× 8 0.7× 51 5.7× 23 294

Countries citing papers authored by W. Noble

Since Specialization
Citations

This map shows the geographic impact of W. Noble's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Noble with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Noble more than expected).

Fields of papers citing papers by W. Noble

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Noble. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Noble. The network helps show where W. Noble may publish in the future.

Co-authorship network of co-authors of W. Noble

This figure shows the co-authorship network connecting the top 25 collaborators of W. Noble. A scholar is included among the top collaborators of W. Noble based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Noble. W. Noble is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Noble, W., et al.. (2024). Wireless Sensor Network for Data Mining in Engineering Projects. Papers on Engineering Education Repository (American Society for Engineering Education). 1 indexed citations
2.
Davari, B., Charles W. Koburger, T. Furukawa, et al.. (2003). A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS. 92–95. 10 indexed citations
3.
Bryant, A., et al.. (2003). Angled implant fully overlapped LDD (AI-FOLD) NFETs for performance and reliability. 34. 152–157. 1 indexed citations
4.
5.
Adler, E.L., J. DeBrosse, S. Geißler, et al.. (1995). The evolution of IBM CMOS DRAM technology. IBM Journal of Research and Development. 39(1.2). 167–188. 35 indexed citations
6.
Hanafi, H.I., et al.. (1993). A model for anomalous short-channel behavior in submicron MOSFETs. IEEE Electron Device Letters. 14(12). 575–577. 28 indexed citations
7.
Bryant, A., et al.. (1992). A fundamental performance limit of optimized 3.3-V sub-quarter-micrometer fully overlapped LDD MOSFET's. IEEE Transactions on Electron Devices. 39(5). 1208–1215. 13 indexed citations
8.
9.
Noble, W., Steven H. Voldman, & A. Bryant. (1989). The effects of gate field on the leakage characteristics of heavily doped junctions. IEEE Transactions on Electron Devices. 36(4). 720–726. 32 indexed citations
10.
Bryant, A., T. Furukawa, J. Mandelman, et al.. (1989). Angled Implant Fully Overlapped LDD (AI-FOLD) NFETs for Performance and Reliability. Reliability physics. 152–157. 4 indexed citations
11.
Noble, W., A. Bryant, & Steven H. Voldman. (1987). Parasitic leakage in DRAM trench storage capacitor vertical gated diodes. 340–343. 13 indexed citations
12.
Voldman, Steven H., A. Bryant, & W. Noble. (1987). IVB-4 vertical storage trench gated diode leakage. IEEE Transactions on Electron Devices. 34(11). 2373–2373. 8 indexed citations
13.
Lu, Nicky, P.E. Cottrell, Winston J. Craig, et al.. (1986). A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's. IEEE Journal of Solid-State Circuits. 21(5). 627–634. 46 indexed citations
14.
Lu, Nicky, P.E. Cottrell, Winston J. Craig, et al.. (1985). The SPT cell—A new substrate-plate trench cell for DRAMs. 771–772. 18 indexed citations
15.
Noble, W. & William W. Walker. (1985). Fundamental limitations on DRAM storage capacitors. IEEE Circuits and Devices Magazine. 1(1). 45–52. 22 indexed citations
16.
Noble, W., et al.. (1980). Interaction of IGFET field design with narrow channel device operation. 724–727. 11 indexed citations
17.
Noble, W.. (1978). Short channel effects in dual gate field effect transistors. 483–486. 3 indexed citations
18.
Noble, W. & P.E. Cottrell. (1976). Narrow channel effects in insulated gate field effect transistors. 582–586. 21 indexed citations
19.
Lindmayer, J. & W. Noble. (1968). Radiation resistant MOS devices. IEEE Transactions on Electron Devices. 15(9). 637–640. 15 indexed citations
20.
Lindmayer, J. & W. Noble. (1967). Radiation resistant MOS devices. 40–42. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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