M.R. Wordeman
-
- Semiconductor materials and devices 46
- Advancements in Semiconductor Devices and Circuit Design 37
- Integrated Circuits and Semiconductor Failure Analysis 13
- Low-power high-performance VLSI design 10
- Silicon Carbide Semiconductor Technologies 8
- Hardware and Architecture top 5%
- VLSI and Analog Circuit Testing 7
- Parallel Computing and Optimization Techniques 7
- Applied Mathematics top 10%
-
- Interconnection Networks and Systems 8
- Co-authors
- G. BaccaraniR.H. DennardG.A. Sai-HalaszJ.Y.-C. SunYuan TaurE. GaninD. P. KernS. A. Rishton
- Cited by
- Electrical and Electronic EngineeringHardware and ArchitectureAtomic and Molecular Physics, and Optics
- Journals
- IEEE Transactions on Electron Devices (11 papers)IEEE Journal of Solid-State Circuits (10 papers)IEEE Electron Device Letters (7 papers)
- Partner nations
- United StatesItalyJapan
In The Last Decade
M.R. Wordeman
65 papers receiving 1.9k citations
Peers
Comparison fields: 5 of 59
- Electrical and Electronic Engineering 1.9k
- Hardware and Architecture 121
- Atomic and Molecular Physics, and Optics 279
- Applied Mathematics 61
- Computer Networks and Communications 103
Countries citing papers authored by M.R. Wordeman
This map shows the geographic impact of M.R. Wordeman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.R. Wordeman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.R. Wordeman more than expected).
Fields of papers citing papers by M.R. Wordeman
This network shows the impact of papers produced by M.R. Wordeman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.R. Wordeman. The network helps show where M.R. Wordeman may publish in the future.
Co-authorship network
The 25 scholars most cited alongside M.R. Wordeman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | Process-design considerations for three dimensional memory integration | 2006 | 3 |
| 2 | 2003 | 0 | |
| 3 | 2003 | 5 | |
| 4 | 2000 | 3 | |
| 5 | 1998 | 3 | |
| 6 | 1997 | 2 | |
| 7 | 1996 | 22 | |
| 8 | 1990 | 31 | |
| 9 | 1989 | 21 | |
| 10 | 1989 | 1 | |
| 11 | 1988 | 11 | |
| 12 | 1988 | 2 | |
| 13 | Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide | 1987 | 6 |
| 14 | 0.5 μm CMOS Device Design and Characterization | 1987 | 1 |
| 15 | 1985 | 4 | |
| 16 | A Fully Scaled Half-Micrometer NMOS Technology Using Direct-Write E-Beam Lithography | 1984 | 1 |
| 17 | 1982 | 10 | |
| 18 | 1982 | 61 | |
| 19 | Modeling and Control of Alpha-Particle Effects in Scaled-Down VLSI Circuits | 1981 | 2 |
| 20 | 1981 | 4 |
About M.R. Wordeman
M.R. Wordeman is a scholar working on Hardware and Architecture, Electrical and Electronic Engineering, Computer Networks and Communications, Atomic and Molecular Physics, and Optics and Automotive Engineering, having authored 69 papers that have together received 2.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Low-power high-performance VLSI design (10 papers), Interconnection Networks and Systems (8 papers), Silicon Carbide Semiconductor Technologies (8 papers), VLSI and Analog Circuit Testing (7 papers) and Parallel Computing and Optimization Techniques (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.9k citations), Hardware and Architecture (121 citations), Atomic and Molecular Physics, and Optics (279 citations), Applied Mathematics (61 citations) and Computer Networks and Communications (103 citations). M.R. Wordeman has collaborated with scholars based in United States, Italy and Japan. Frequent co-authors include G. Baccarani, R.H. Dennard, G.A. Sai-Halasz, J.Y.-C. Sun, Yuan Taur, E. Ganin, D. P. Kern, S. A. Rishton, B. Davari and D.S. Zicherman. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Journal of Solid-State Circuits, IEEE Electron Device Letters, IBM Journal of Research and Development and Journal of The Electrochemical Society.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.