M.R. Wordeman

2.9k total citations
69 papers, 2.0k citations indexed

About

M.R. Wordeman is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Computer Networks and Communications. According to data from OpenAlex, M.R. Wordeman has authored 69 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Electrical and Electronic Engineering, 13 papers in Hardware and Architecture and 11 papers in Computer Networks and Communications. Recurrent topics in M.R. Wordeman's work include Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). M.R. Wordeman is often cited by papers focused on Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). M.R. Wordeman collaborates with scholars based in United States, Italy and Japan. M.R. Wordeman's co-authors include G. Baccarani, R.H. Dennard, G.A. Sai-Halasz, J.Y.-C. Sun, Yuan Taur, E. Ganin, D. P. Kern, S. A. Rishton, B. Davari and D.S. Zicherman and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

M.R. Wordeman

65 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.R. Wordeman United States 20 1.9k 279 184 122 121 69 2.0k
Marek Turowski United States 18 1.0k 0.5× 279 1.0× 109 0.6× 204 1.7× 85 0.7× 93 1.2k
W.L. Engl Germany 15 908 0.5× 201 0.7× 84 0.5× 76 0.6× 38 0.3× 66 1.0k
B. Meinerzhagen Germany 21 1.6k 0.8× 419 1.5× 195 1.1× 133 1.1× 14 0.1× 138 1.7k
A. Gnudi Italy 32 3.0k 1.6× 487 1.7× 750 4.1× 536 4.4× 17 0.1× 228 3.3k
N. Stojadinović Serbia 18 1.2k 0.6× 113 0.4× 47 0.3× 106 0.9× 43 0.4× 119 1.3k
S. V. Hattangady United States 19 974 0.5× 232 0.8× 64 0.3× 362 3.0× 140 1.2× 65 1.3k
C.A.T. Salama Canada 26 2.5k 1.3× 226 0.8× 740 4.0× 137 1.1× 127 1.0× 241 2.6k
Anthony L. Lentine United States 34 3.6k 1.9× 1.9k 6.7× 261 1.4× 137 1.1× 28 0.2× 203 3.9k
J. Félix United States 22 1.8k 0.9× 105 0.4× 31 0.2× 133 1.1× 374 3.1× 56 1.9k
W. Greene United States 14 1.1k 0.6× 462 1.7× 114 0.6× 122 1.0× 8 0.1× 34 1.2k

Countries citing papers authored by M.R. Wordeman

Since Specialization
Citations

This map shows the geographic impact of M.R. Wordeman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.R. Wordeman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.R. Wordeman more than expected).

Fields of papers citing papers by M.R. Wordeman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.R. Wordeman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.R. Wordeman. The network helps show where M.R. Wordeman may publish in the future.

Co-authorship network of co-authors of M.R. Wordeman

This figure shows the co-authorship network connecting the top 25 collaborators of M.R. Wordeman. A scholar is included among the top collaborators of M.R. Wordeman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.R. Wordeman. M.R. Wordeman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Iyer, Subramanian S., et al.. (2006). Process-design considerations for three dimensional memory integration. Symposium on VLSI Technology. 60–63. 3 indexed citations
2.
3.
Davari, B., Wei‐Hsu Chang, M.R. Wordeman, et al.. (2003). A high performance 0.25 mu m CMOS technology. 34. 56–59. 5 indexed citations
4.
Hoenigschmid, H., Alexander Frey, J. DeBrosse, et al.. (2000). A 7F/sup 2/ cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs. IEEE Journal of Solid-State Circuits. 35(5). 713–718. 3 indexed citations
5.
Kirihata, T., et al.. (1998). A 220-mm/sup 2/, four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architecture. IEEE Journal of Solid-State Circuits. 33(11). 1711–1719. 3 indexed citations
6.
Luk, W.K., Y. Katayama, Wei Hwang, et al.. (1997). Development of a high bandwidth merged logic/DRAM multimedia chip. 279–285. 2 indexed citations
7.
Kirihata, T., Yoshihiro Watanabe, J. DeBrosse, et al.. (1996). Fault-tolerant designs for 256 Mb DRAM. IEEE Journal of Solid-State Circuits. 31(4). 558–566. 22 indexed citations
8.
Sai-Halasz, G.A., M.R. Wordeman, D. P. Kern, et al.. (1990). Experimental technology and performance of 0.1-µm-gate-length FETs operated at liquid-nitrogen temperature. IBM Journal of Research and Development. 34(4). 452–465. 31 indexed citations
9.
Hsu, Ching-Fang, et al.. (1989). Hot-electron-induced instability in 0.5- mu m p-channel MOSFETs patterned using synchrotron X-ray lithography. IEEE Electron Device Letters. 10(7). 327–329. 21 indexed citations
10.
Hsu, Ching-Fang, et al.. (1989). Hot-Carrier Induced Instability of 0.5 tm CMOS Devices Patterned using Synchrotron X-Ray Lithography. Reliability physics. 189–192. 1 indexed citations
11.
Sai-Halasz, G.A., M.R. Wordeman, D. P. Kern, et al.. (1988). Inverter performance of deep-submicrometer MOSFETs. IEEE Electron Device Letters. 9(12). 633–635. 11 indexed citations
12.
Kern, D. P., S. A. Rishton, T. H. P. Chang, et al.. (1988). Lithography issues in fabricating high-performance sub-100-nm channel metal–oxide semiconductor field effect transistors. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(6). 1836–1840. 2 indexed citations
13.
Davari, B., C. Y. Ting, K. Y. Ahn, et al.. (1987). Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide. Symposium on VLSI Technology. 61–62. 6 indexed citations
14.
Hanafi, H.I., M.R. Wordeman, Yuan Taur, et al.. (1987). 0.5 μm CMOS Device Design and Characterization. European Solid-State Device Research Conference. 91–94. 1 indexed citations
15.
Dennard, R.H. & M.R. Wordeman. (1985). MOSFET miniaturization — From one micron to the limits. Physica B+C. 129(1-3). 3–15. 4 indexed citations
16.
Wordeman, M.R., et al.. (1984). A Fully Scaled Half-Micrometer NMOS Technology Using Direct-Write E-Beam Lithography. Symposium on VLSI Technology. 26–27. 1 indexed citations
17.
Baccarani, G. & M.R. Wordeman. (1982). Transconductance degradation in thin-Oxide MOSFET's. 278–281. 10 indexed citations
18.
Sai-Halasz, G.A., M.R. Wordeman, & R.H. Dennard. (1982). Alpha-particle-induced soft error rate in VLSI circuits. IEEE Transactions on Electron Devices. 29(4). 725–731. 61 indexed citations
19.
Dennard, R.H., G.A. Sai-Halasz, & M.R. Wordeman. (1981). Modeling and Control of Alpha-Particle Effects in Scaled-Down VLSI Circuits. Symposium on VLSI Technology. 44–45. 2 indexed citations
20.
Chao, H.H., R.H. Dennard, M. Y. Tsai, M.R. Wordeman, & A. Cramer. (1981). A 34 /spl mu/m/SUP 2/ DRAM cell fabricated with a 1 /spl mu/m single-level polycide FET technology. IEEE Journal of Solid-State Circuits. 16(5). 499–505. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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