A. Strong

404 total citations
19 papers, 279 citations indexed

About

A. Strong is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, A. Strong has authored 19 papers receiving a total of 279 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 3 papers in Materials Chemistry. Recurrent topics in A. Strong's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Copper Interconnects and Reliability (7 papers). A. Strong is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Copper Interconnects and Reliability (7 papers). A. Strong collaborates with scholars based in United States, Taiwan and Canada. A. Strong's co-authors include R.‐P. Vollertsen, Ernest Y. Wu, J. Suñé, Stewart E. Rauch, Giuseppe La Rosa, Timothy D. Sullivan, F. Chen, D. Harmon, Jinuk Luke Shin and Poonacha Kongetira and has published in prestigious journals such as Applied Physics Letters, Solid-State Electronics and Microelectronics Reliability.

In The Last Decade

A. Strong

19 papers receiving 260 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Strong United States 9 254 65 51 28 23 19 279
W. Lai United States 13 518 2.0× 55 0.8× 35 0.7× 25 0.9× 71 3.1× 23 540
Ting-Yen Chiang United States 8 292 1.1× 52 0.8× 29 0.6× 27 1.0× 51 2.2× 11 317
A. Vayshenker United States 13 661 2.6× 64 1.0× 44 0.9× 26 0.9× 76 3.3× 16 679
Boris Vaisband United States 11 248 1.0× 18 0.3× 46 0.9× 43 1.5× 19 0.8× 42 270
Lieve Bogaerts Belgium 8 291 1.1× 28 0.4× 27 0.5× 20 0.7× 13 0.6× 21 306
T. Marangon Italy 8 144 0.6× 54 0.8× 13 0.3× 10 0.4× 124 5.4× 14 177
M. Shinosky United States 13 307 1.2× 208 3.2× 19 0.4× 5 0.2× 16 0.7× 22 319
Kaizad Mistry United States 5 396 1.6× 23 0.4× 39 0.8× 10 0.4× 133 5.8× 8 427
Juergen Boemmels Belgium 7 316 1.2× 46 0.7× 16 0.3× 5 0.2× 36 1.6× 28 351
D.L. Kencke United States 13 364 1.4× 35 0.5× 20 0.4× 28 1.0× 159 6.9× 34 423

Countries citing papers authored by A. Strong

Since Specialization
Citations

This map shows the geographic impact of A. Strong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Strong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Strong more than expected).

Fields of papers citing papers by A. Strong

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Strong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Strong. The network helps show where A. Strong may publish in the future.

Co-authorship network of co-authors of A. Strong

This figure shows the co-authorship network connecting the top 25 collaborators of A. Strong. A scholar is included among the top collaborators of A. Strong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Strong. A. Strong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Strong, A., Ernest Y. Wu, R.‐P. Vollertsen, et al.. (2009). Reliability Wearout Mechanisms in Advanced CMOS Technologies. 105 indexed citations
2.
Chen, F., J. R. Lloyd, Kaushik Chanda, et al.. (2008). Line edge roughness and spacing effect on low-k TDDB characteristics. 132–137. 34 indexed citations
3.
Aubel, Oliver, et al.. (2007). Constant-Current Wafer-Level Electromigration Test: Normalization of Data for Production Monitoring. IEEE Transactions on Device and Materials Reliability. 7(2). 270–277. 3 indexed citations
4.
Aubel, Oliver, et al.. (2006). Practical considerations for Wafer-Level Electromigration Monitoring in high volume production. 105–110. 1 indexed citations
5.
Leon, Ana Sonia, et al.. (2006). A Power-Efficient High-Throughput 32-Thread SPARC Processor. 295–304. 33 indexed citations
6.
Chen, F., J. Gill, D. Harmon, et al.. (2005). Determination of the thermal conductivity of composite low-k dielectrics for advanced interconnect structures. Microelectronics Reliability. 46(2-4). 232–243. 8 indexed citations
7.
Parkinson, P. M. Saz, M. Chudzik, Kangguo Cheng, et al.. (2004). Novel techniques for scaling deep trench DRAM capacitor technology to 0.11 μm and beyond. ed 33. 21–24. 4 indexed citations
8.
9.
Wu, Ernest Y., W. Lai, Mukesh Khare, et al.. (2003). Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide. 60–72. 18 indexed citations
10.
11.
12.
13.
Strong, A., Ernest Y. Wu, & R. Bolam. (2002). Dielectric step stress and life stress comparison. 165–165. 1 indexed citations
14.
Malik, R., L. A. Clevenger, Oleg Gluschenkov, et al.. (2002). W/WN/poly gate implementation for sub-130 nm vertical cell DRAM. 31–32. 2 indexed citations
15.
Vollertsen, R.‐P. & A. Strong. (2002). Analysis and optimization of stress conditions for gate oxide wearout using Monte Carlo simulation. 9–13. 8 indexed citations
16.
17.
Wu, Ernest Y., et al.. (1997). Characteristics of intrinsic breakdown of thin reoxidized nitride for trench capacitors. Microelectronics Reliability. 37(10-11). 1511–1516. 1 indexed citations
18.
Strong, A., A. K. Stamper, R. Bolam, et al.. (1993). Gate dielectric integrity and reliability in 0.5- mu m CMOS technology. 18–21. 3 indexed citations
19.
Cole, Daniel C., E. M. Buturla, S. Furkay, et al.. (1990). The use of simulation in semiconductor technology development. Solid-State Electronics. 33(6). 591–623. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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