G. Freeman

806 citations

36 papers · 555 indexed · h-index 13

Electrical and Electronic Engineering top 10%
- Radio Frequency Integrated Circuit Design 29
- Semiconductor materials and devices 18
- Advancements in Semiconductor Devices and Circuit Design 17
- 3D IC and TSV technologies 9
- Photonic and Optical Devices 4
- Integrated Circuits and Semiconductor Failure Analysis 3
Hardware and Architecture
Atomic and Molecular Physics, and Optics
Biomedical Engineering
- Analog and Mixed-Signal Circuit Design 5
Materials Chemistry
Artificial Intelligence
- Neural Networks and Applications 2

Co-authors: John D. Cressler Jae-Sung Rieh D. Ahlgren D.L. Harame Marwan Khater Yuan Lu R. Krithivasan Alvin Joseph
Cited by: Electrical and Electronic Engineering Hardware and Architecture Atomic and Molecular Physics, and Optics
Journals: IEEE Electron Device Letters (3 papers)IEEE Transactions on Nuclear Science (3 papers)IEEE Journal of Solid-State Circuits (2 papers)
Partner nations: United States South Korea Taiwan

In The Last Decade

G. Freeman

36 papers receiving 522 citations

Peers

Countries citing papers authored by G. Freeman

Since Specialization

Citations

This map shows the geographic impact of G. Freeman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Freeman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Freeman more than expected).

Fields of papers citing papers by G. Freeman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Freeman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Freeman. The network helps show where G. Freeman may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G. Freeman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Freeman Line = papers co-authored together G. Freeman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Half-terahertz operation of SiGe HBTs IEEE Electron Device Letters ·R. Krithivasan,Yuan Lu,John D. Cressler,Jae-Sung Rieh,Marwan Khater,Zaur Musaiev,G. Freeman	2006	71
2	Effects of Emitter Scaling and Device Biasing on Millimeter-Wave VCO Performance in 200 GHz SiGe HBT Technology N Tartaglini,Yi‐Jan Emery Chen,John D. Cressler,G. Freeman	2006	2
3	On the scaling limits of low-frequency noise in SiGe HBTs 美幸沖田,Zhiyang Jin,John D. Cressler,Yan Cui,Guofu Niu,Qingqing Liang,S.L. Glaser,G. Freeman,Miriam Atmane,Alvin Joseph	2004	3
4	RFCMOS technology from 0.25μm to 65nm: the state of the art John J. Pekarik,D. Greenberg,B. Jagannathan,R. Groves,Joyelle Jones,Raminderpal Singh,A. Chinthakindi,X. Wang,M. Breitwisch,Douglas Coolbaugh,P.E. Cottrell,J. Florkey,G. Freeman,Paul Harald Brichta	2004	23
5	A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT Zohreh Taebi Noghondari,Okudaira,B.A. Rainey,Andy Stricker,Dewanggo Haryo Paramtopo,P. Gray,M. Zierak,Michael S. Gordon,D.R. Collins,Achutananda Parhi,Ridha Saryani Sitorus,Froukje de Roo,Alvin Joseph,J. Dunn,Jae-Sung Rieh,S.J. Jeng,Xuan Zhang,G. Freeman,D. Ahlgren	2003	35
6	A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs IEEE Transactions on Microwave Theory and Techniques ·Sarda Elisa,John D. Cressler,Guofu Niu,Dai Yihu,G. Freeman,D. Ahlgren,Devleena Dey,Afrima Yosi,D.L. Harame	2003	62
7	0.13 μm 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) ·Alvin Joseph,Douglas Coolbaugh,D.L. Harame,G. Freeman,S. Subbanna,Е.В. Шабанова,J. Dunn,Arjaree Nilvongse,D. Greenberg,R. Groves,Mounir Meghelli,Alexander Rylyakov,M. Sorna,Aurea Matilde Fernández Muñiz,David A. Herman,L J Wang	2003	6
8	Integration and design issues in combining very-high-speed silicon-germanium bipolar transistors and ULSI CMOS for system-on-a-chip applications S. Subbanna,G. Freeman,D. Ahlgren,D. Greenberg,D.L. Harame,J. Dunn,David A. Herman,B.S. Meyerson,Yuriy Greshishchev,Peter Schvan,郭世凤,Kim Gi Taek,D. P. Abbot	2003	1
9	SiGe HBT performance and reliability trends through f/sub T/ of 350 GHz G. Freeman,Jae-Sung Rieh,B. Jagannathan,Shumaila Hemani,F Guarin,Alvin Joseph,Zaur Musaiev	2003	15
10	Electromigration current limit of high speed SiGe bipolar transistors influenced by device self-heating Ritika Chakraborty,Jae-Sung Rieh,Hanife Orhangazi,G. Freeman	2003	3
11	Proton tolerance of third-generation, 0.12 /spl mu/m 185 GHz SiGe HBTs IEEE Transactions on Nuclear Science ·Yuan Lu,John D. Cressler,R. Krithivasan,Ying Li,Robert A. Reed,Paul W. Marshall,Toussaint Bouchard,G. Freeman,D. Ahlgren	2003	27
12	The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs IEEE Transactions on Electron Devices ·Shiming Zhang,Guofu Niu,John D. Cressler,Alvin Joseph,G. Freeman,D.L. Harame	2002	13
13	Electrical parameter data analysis and object-oriented techniques in semiconductor process development G. Freeman,J. Kierstead,Pamela Nelson	2002	2
14	Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs S. Subbanna,T. Ohba,G. Freeman,Zaur Musaiev,K. Stein,Arjaree Nilvongse,钱念孙,Lidia Pari Valeriano,Ramzia Abu Hamad,R. Groves,M. Soyuer,E. Montanari,Jon Binney,Daniel B. Rowe,W. A.,David A. Herman,B.S. Meyerson	2002	3
15	A scalable, statistical SPICE Gummel-Poon model for SiGe HBTs Saryono Yohanes,Fabrizio Incerti,D.A. Sunderland,重雄塩田,G. Freeman,R. Groves,Akiko Tashiro,D.L. Harame	2002	11
16	A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technology IEEE Electron Device Letters ·B. Jagannathan,Mounir Meghelli,Alexander Rylyakov,R. Groves,A. Chinthakindi,C.M. Schnabel,Zaur Musaiev,G. Freeman,K. Stein,S. Subbanna	2002	17
17	The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology IEEE Transactions on Nuclear Science ·John D. Cressler,Michael C. Hamilton,Jorg R Jemelka,عبد الغفار يونس صديق بدري,Guofu Niu,Cheryl J. Marshall,Paul W. Marshall,H.S. Kim,Michael J. Palmer,Alvin Joseph,G. Freeman	2000	30
18	Device Reliability and Repeatability of a High Performance Si/SiGe HBT BiCMOS Technology European Solid-State Device Research Conference ·D. Ahlgren,Parth Naidu,G. Freeman,Saryono Yohanes,R. Groves,Gibson Likert,A. Vayshenker,Emaan Rashidi	1998	6
19	MERLIN: a device diagnosis system based on analytic models IEEE Transactions on Semiconductor Manufacturing ·G. Freeman,Karel Redlich,JOHN H. SCHWARZ	1993	6
20	Two CMOS Metastability Sensors. International Test Conference ·G. Freeman,A. Masalaite,B.A. Wooley,E.J. McCluskey	1986	2

About G. Freeman

G. Freeman is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Biomedical Engineering, having authored 36 papers that have together received 555 indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (29 papers), Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), 3D IC and TSV technologies (9 papers), Analog and Mixed-Signal Circuit Design (5 papers), Photonic and Optical Devices (4 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers) and Neural Networks and Applications (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (527 citations), Hardware and Architecture (27 citations) and Atomic and Molecular Physics, and Optics (90 citations). G. Freeman has collaborated with scholars based in United States, South Korea and Taiwan. Frequent co-authors include John D. Cressler, Jae-Sung Rieh, D. Ahlgren, D.L. Harame, Marwan Khater, Yuan Lu, R. Krithivasan, Alvin Joseph, S. Subbanna and B. Jagannathan. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Nuclear Science, IEEE Journal of Solid-State Circuits, IEEE Transactions on Semiconductor Manufacturing and IEEE Transactions on Microwave Theory and Techniques.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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