G. Freeman

806 total citations
36 papers, 555 citations indexed

About

G. Freeman is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Hardware and Architecture. According to data from OpenAlex, G. Freeman has authored 36 papers receiving a total of 555 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 5 papers in Biomedical Engineering and 2 papers in Hardware and Architecture. Recurrent topics in G. Freeman's work include Radio Frequency Integrated Circuit Design (29 papers), Semiconductor materials and devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). G. Freeman is often cited by papers focused on Radio Frequency Integrated Circuit Design (29 papers), Semiconductor materials and devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). G. Freeman collaborates with scholars based in United States, South Korea and Taiwan. G. Freeman's co-authors include John D. Cressler, Jae-Sung Rieh, D. Ahlgren, D.L. Harame, Marwan Khater, Yuan Lu, R. Krithivasan, Alvin Joseph, S. Subbanna and B. Jagannathan and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, Applied Surface Science and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

G. Freeman

36 papers receiving 522 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Freeman United States 13 527 90 79 41 27 36 555
I. Post United Kingdom 9 354 0.7× 89 1.0× 30 0.4× 33 0.8× 12 0.4× 20 360
Waisum Wong China 14 523 1.0× 46 0.5× 60 0.8× 24 0.6× 25 0.9× 57 532
M. Foisy United States 9 443 0.8× 172 1.9× 63 0.8× 27 0.7× 9 0.3× 31 458
E. Ohue Japan 14 484 0.9× 113 1.3× 47 0.6× 21 0.5× 11 0.4× 49 487
K. Schonenberg United States 10 338 0.6× 72 0.8× 46 0.6× 10 0.2× 12 0.4× 22 349
Kurt A. Moen United States 12 364 0.7× 41 0.5× 28 0.4× 8 0.2× 24 0.9× 36 376
J.L. Pelloie France 14 771 1.5× 31 0.3× 33 0.4× 27 0.7× 32 1.2× 72 780
S. Haendler France 14 590 1.1× 43 0.5× 56 0.7× 20 0.5× 31 1.1× 62 599
K. O United States 11 515 1.0× 31 0.3× 94 1.2× 12 0.3× 15 0.6× 21 527
J.T. Watt United States 11 395 0.7× 86 1.0× 38 0.5× 17 0.4× 37 1.4× 23 415

Countries citing papers authored by G. Freeman

Since Specialization
Citations

This map shows the geographic impact of G. Freeman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Freeman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Freeman more than expected).

Fields of papers citing papers by G. Freeman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Freeman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Freeman. The network helps show where G. Freeman may publish in the future.

Co-authorship network of co-authors of G. Freeman

This figure shows the co-authorship network connecting the top 25 collaborators of G. Freeman. A scholar is included among the top collaborators of G. Freeman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Freeman. G. Freeman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Krithivasan, R., Yuan Lu, John D. Cressler, et al.. (2006). Half-terahertz operation of SiGe HBTs. IEEE Electron Device Letters. 27(7). 567–569. 71 indexed citations
2.
3.
Jin, Zhiyang, John D. Cressler, Yan Cui, et al.. (2004). On the scaling limits of low-frequency noise in SiGe HBTs. 12–13. 3 indexed citations
4.
Pekarik, John J., D. Greenberg, B. Jagannathan, et al.. (2004). RFCMOS technology from 0.25μm to 65nm: the state of the art. 217–224. 23 indexed citations
5.
Rainey, B.A., Andy Stricker, P. Gray, et al.. (2003). A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT. 35 indexed citations
6.
Cressler, John D., et al.. (2003). A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs. IEEE Transactions on Microwave Theory and Techniques. 51(11). 2165–2174. 62 indexed citations
7.
Joseph, Alvin, Douglas Coolbaugh, D.L. Harame, et al.. (2003). 0.13 μm 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS. 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315). 1. 180–458. 6 indexed citations
8.
9.
Freeman, G., et al.. (2003). SiGe HBT performance and reliability trends through f/sub T/ of 350 GHz. 332–338. 15 indexed citations
10.
11.
Lu, Yuan, John D. Cressler, R. Krithivasan, et al.. (2003). Proton tolerance of third-generation, 0.12 /spl mu/m 185 GHz SiGe HBTs. IEEE Transactions on Nuclear Science. 50(6). 1811–1815. 27 indexed citations
12.
Zhang, Shiming, Guofu Niu, John D. Cressler, et al.. (2002). The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs. IEEE Transactions on Electron Devices. 49(3). 429–435. 13 indexed citations
13.
14.
Subbanna, S., G. Freeman, K. Stein, et al.. (2002). Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. 559–566. 3 indexed citations
15.
Sunderland, D.A., et al.. (2002). A scalable, statistical SPICE Gummel-Poon model for SiGe HBTs. 32–35. 11 indexed citations
16.
Jagannathan, B., Mounir Meghelli, Alexander Rylyakov, et al.. (2002). A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technology. IEEE Electron Device Letters. 23(9). 541–543. 17 indexed citations
17.
Cressler, John D., Michael C. Hamilton, Guofu Niu, et al.. (2000). The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology. IEEE Transactions on Nuclear Science. 47(6). 2515–2520. 30 indexed citations
18.
Ahlgren, D., et al.. (1998). Device Reliability and Repeatability of a High Performance Si/SiGe HBT BiCMOS Technology. European Solid-State Device Research Conference. 452–455. 6 indexed citations
19.
Freeman, G., et al.. (1993). MERLIN: a device diagnosis system based on analytic models. IEEE Transactions on Semiconductor Manufacturing. 6(4). 306–317. 6 indexed citations
20.
Freeman, G., et al.. (1986). Two CMOS Metastability Sensors.. International Test Conference. 14(1). 140–144. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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