P. Fonteneau

621 citations

22 papers · 262 indexed · h-index 11

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Electromagnetic Compatibility and Noise Suppression
- Advanced Memory and Neural Computing
Hardware and Architecture

Papers in

Electrical and Electronic Engineering 22
- Electrostatic Discharge in Electronics 13
- Semiconductor materials and devices 12
- Advancements in Semiconductor Devices and Circuit Design 11
- Integrated Circuits and Semiconductor Failure Analysis 8
- Silicon Carbide Semiconductor Technologies 6
- Electromagnetic Compatibility and Noise Suppression 4
- Radio Frequency Integrated Circuit Design 3
Atomic and Molecular Physics, and Optics 2
- Surface and Thin Film Phenomena 2

Co-authors: S. Cristoloveanu P. Soukiassian Vincent Derycke Philippe Ferrari Pascal Nouet F. Azaı̈s C. Fenouillet-Béranger Nga Pham
Journals: Solid-State Electronics (5 papers)Physical review. B, Condensed matter (2 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Electron Device Letters (1 paper)Applied Surface Science (1 paper)
Partner nations: France Switzerland India

In The Last Decade

P. Fonteneau

22 papers receiving 250 citations

Peers

Countries citing papers authored by P. Fonteneau

Since Specialization

Citations

This map shows the geographic impact of P. Fonteneau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Fonteneau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Fonteneau more than expected).

Fields of papers citing papers by P. Fonteneau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Fonteneau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Fonteneau. The network helps show where P. Fonteneau may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Fonteneau, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Fonteneau Line = papers co-authored together P. Fonteneau links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	CMOS Pixel Potentials Extraction Method From Test Structures Based on EKV Model IEEE Transactions on Electron Devices ·毅仁新橋, A.J. v.d. Weele, P. Fonteneau, Olivier Marcelot, Pierre Magnan	2021	1
2	Sharp Logic Switch Based on Band Modulation IEEE Electron Device Letters ·Michele Roley, Nabil Moatassim Bilah, P. Fonteneau, Maryline Bawedin, S. Cristoloveanu	2019	6
3	Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM IEEE Transactions on Electron Devices ·Carlos Navarro, J. Lacord, Mukta Singh Parihar, Fikru Adamu-Lema, Meng Duan, Noel Rodríguez, B. Cheng, Nabil Moatassim Bilah, N. Čiukšiené, P. Fonteneau, Maryline Bawedin, Campbell Millar, Philippe Galy, C. Le Royer, Siegfried Karg, Tohru Ohkoshi, Yong‐Tae Kim, Asen Asenov, S. Cristoloveanu, F. Gámiz	2017	29
4	Sharp-switching band-modulation back-gated devices in advanced FDSOI technology Solid-State Electronics ·Nabil Moatassim Bilah, P. Fonteneau, Л И Коваленко, N.A. Valiaeva, T. Uenaka, Philippe Ferrari, S. Cristoloveanu	2016	11
5	A band-modulation device in advanced FDSOI technology: Sharp switching characteristics Solid-State Electronics ·Nabil Moatassim Bilah, Л И Коваленко, P. Fonteneau, N.A. Valiaeva, T. Uenaka, Dominique Golanski, Philippe Ferrari, S. Cristoloveanu	2016	5
6	A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms Solid-State Electronics ·Л И Коваленко, P. Fonteneau, Philipp Kristian Diekhöner, C. Fenouillet-Béranger, Philippe Ferrari, S. Cristoloveanu	2015	14
7	Properties and mechanisms of Z2-FET at variable temperature Solid-State Electronics ·Nabil Moatassim Bilah, Л И Коваленко, P. Fonteneau, Philippe Ferrari, S. Cristoloveanu	2015	23
8	Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies P. Fonteneau, Л И Коваленко, T. Uenaka, Philipp Kristian Diekhöner, C. Fenouillet-Béranger	2015	3
9	Z2-FET: A promising FDSOI device for ESD protection Solid-State Electronics ·Л И Коваленко, Jing Wan, P. Fonteneau, C. Fenouillet-Béranger, C. Le Royer, A. Zaslavsky, Philippe Ferrari, S. Cristoloveanu	2014	19
10	First demonstration of a full 28nm high-k/metal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration Dominique Golanski, P. Fonteneau, C. Fenouillet-Béranger, A. Cros, F. Monsieur, SNEH JOSHI, Philipp Kristian Diekhöner, Maria Vitória Oliveira da Silva, 吕飞阅 Lü Feiyue, Ross L. Finney, Rafael Hoppen Dos Santos, LuuV Pham, O. Weber, O. Saxod, D Parrinder, Philippe Galy, N. Planes, F. Arnaud	2013	22
11	ESD design challenges in 28nm hybrid FDSOI/Bulk advanced CMOS process Maria Vitória Oliveira da Silva, SNEH JOSHI, P. Fonteneau, Dominique Golanski, C. Fenouillet-Béranger, Ross L. Finney, 刘璃红, 张怡陶, Philipp Kristian Diekhöner, J�rgen Staedt	2012	12
12	Modeling a SCR-based protection structure for RF-ESD co-design simulations 2011 IEEE MTT-S International Microwave Symposium ·Uz. Dr. Sibel Çatirli, Thais Duarte Felice, Ombretta Pinazza, P. Fonteneau, Lic. Esp. Pof. Silvia Marcela Hurtado	2011	2
13	Modeling a SCR-based protection structure for RF-ESD co-design simulations 2011 IEEE MTT-S International Microwave Symposium ·Jaunius Špakauskas, Philippe Ferrari, Ombretta Pinazza, P. Fonteneau, Philipp Kristian Diekhöner	2011	2
14	Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain Microelectronics Reliability ·D Parrinder, P. Fonteneau, Philipp Kristian Diekhöner, Pascal Nouet, F. Azaı̈s	2009	5
15	A scalable compact model of interconnects self-heating in CMOS technology Electrical Overstress/Electrostatic Discharge Symposium ·D Parrinder, P. Fonteneau, Philipp Kristian Diekhöner, 吕飞阅 Lü Feiyue, Lin-ye ZHENG	2008	5
16	Transit Time Extraction Method for ESD Protection Diodes Model HAL (Le Centre pour la Communication Scientifique Directe) ·D Parrinder, P. Fonteneau, Philipp Kristian Diekhöner, Pascal Nouet, F. Azaı̈s	2008	1
17	Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain HAL (Le Centre pour la Communication Scientifique Directe) ·D Parrinder, P. Fonteneau, Philipp Kristian Diekhöner, Pascal Nouet, F. Azaı̈s	2007	20
18	From K atom pairs to K atomic chains: A semiconducting 2×3 to metallic 2×1 transition on the β-SiC(100) c(4×2) surface Applied Physics Letters ·Vincent Derycke, P. Fonteneau, Y. Hwu, P. Soukiassian	2006	6
19	Molecular-hydrogen interaction with β-SiC(100)3×2 andc(4×2) surfaces and with Si atomic lines Physical review. B, Condensed matter ·Vincent Derycke, P. Fonteneau, Nga Pham, P. Soukiassian	2001	25
20	Imaging β-SiC(100)c(4×2)surface down dimers by empty electronic states scanning tunneling microscopy Physical review. B, Condensed matter ·Vincent Derycke, P. Fonteneau, P. Soukiassian	2000	13

About P. Fonteneau

P. Fonteneau is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Infectious Diseases, having authored 22 papers that have together received 262 indexed citations. Recurring topics across this work include Electrostatic Discharge in Electronics (13 papers), Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Silicon Carbide Semiconductor Technologies (6 papers), Electromagnetic Compatibility and Noise Suppression (4 papers), Radio Frequency Integrated Circuit Design (3 papers) and Surface and Thin Film Phenomena (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (254 citations), Hardware and Architecture (7 citations), Instrumentation (3 citations), Electronic, Optical and Magnetic Materials (12 citations) and Materials Chemistry (30 citations). P. Fonteneau has collaborated with scholars based in France, Switzerland and India. Frequent co-authors include S. Cristoloveanu, P. Soukiassian, Vincent Derycke, Philippe Ferrari, Pascal Nouet, F. Azaı̈s, C. Fenouillet-Béranger, Nga Pham, C. Le Royer and Maryline Bawedin. Their work appears in journals such as Solid-State Electronics, Physical review. B, Condensed matter, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Applied Surface Science.

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