J. Aitken

1.5k total citations
36 papers, 1.1k citations indexed

About

J. Aitken is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, J. Aitken has authored 36 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 14 papers in Electronic, Optical and Magnetic Materials and 5 papers in Materials Chemistry. Recurrent topics in J. Aitken's work include Semiconductor materials and devices (34 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Copper Interconnects and Reliability (12 papers). J. Aitken is often cited by papers focused on Semiconductor materials and devices (34 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Copper Interconnects and Reliability (12 papers). J. Aitken collaborates with scholars based in United States, Netherlands and Canada. J. Aitken's co-authors include Donald R. Young, D. J. DiMaria, Z. A. Weinberg, Kai Pan, F. Chen, M. Shinosky, O. Martı́nez, E. Nowak, P. McLaughlin and Ernest Y. Wu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. Aitken

35 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Aitken United States	17	1.0k	260	236	122	49	36	1.1k
W. Ting United States	15	669 0.6×	194 0.7×	77 0.3×	42 0.3×	43 0.9×	48	688
A. Kalnitsky United States	13	529 0.5×	186 0.7×	50 0.2×	112 0.9×	26 0.5×	47	602
G.F. Derbenwick United States	13	629 0.6×	238 0.9×	47 0.2×	97 0.8×	17 0.3×	24	689
Badih El-Kareh United States	12	497 0.5×	140 0.5×	63 0.3×	70 0.6×	13 0.3×	30	588
R. Wachnik United States	15	964 0.9×	110 0.4×	291 1.2×	117 1.0×	14 0.3×	41	1.1k
A. K. Stamper United States	13	457 0.4×	123 0.5×	279 1.2×	69 0.6×	12 0.2×	30	590
Y. Tsunashima Japan	17	734 0.7×	155 0.6×	54 0.2×	157 1.3×	30 0.6×	77	846
Mitsuo Okamoto Japan	20	1.0k 1.0×	131 0.5×	133 0.6×	185 1.5×	9 0.2×	114	1.2k
K. Mukai Japan	13	548 0.5×	180 0.7×	197 0.8×	93 0.8×	17 0.3×	29	654
D. B. Fraser United States	13	579 0.6×	177 0.7×	97 0.4×	631 5.2×	17 0.3×	23	793

Countries citing papers authored by J. Aitken

Since Specialization

Citations

This map shows the geographic impact of J. Aitken's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Aitken with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Aitken more than expected).

Fields of papers citing papers by J. Aitken

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Aitken. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Aitken. The network helps show where J. Aitken may publish in the future.

Co-authorship network of co-authors of J. Aitken

This figure shows the co-authorship network connecting the top 25 collaborators of J. Aitken. A scholar is included among the top collaborators of J. Aitken based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Aitken. J. Aitken is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chen, Fen, M. Shinosky, J. Aitken, C.-C. Yang, & D. C. Edelstein. (2013). Temperature and field interrelation study of low-k TDDB for Cu interconnects with and without liner - New insights to the roles of Cu for a competing breakdown process. 99. 2F.2.1–2F.2.7. 9 indexed citations

Chen, Fen, M. Shinosky, J. Aitken, C.-C. Yang, & D. Edelstein. (2012). Invasion percolation model for abnormal time-dependent dielectric breakdown characteristic of low-k dielectrics due to massive metallic diffusion. Applied Physics Letters. 101(24). 12 indexed citations

Fen, Chen, S. Mittl, M. Shinosky, et al.. (2012). Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues. 462 463. 6A.4.1–6A.4.9. 18 indexed citations

Chen, F., M. Shinosky, J. Aitken, et al.. (2011). Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes. 2F.2.1–2F.2.8. 5 indexed citations

Chen, F., M. Shinosky, J. Gambino, et al.. (2009). Critical ultra low-k TDDB reliability issues for advanced CMOS technologies. 464–475. 18 indexed citations

Gambino, J., et al.. (2009). Correlation between I–V slope and TDDB voltage acceleration for Cu/low-k interconnects. 95. 182–184. 5 indexed citations

Chen, F., O. Martı́nez, D. Harmon, M. Shinosky, & J. Aitken. (2008). Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies. Microelectronics Reliability. 48(8-9). 1375–1383. 37 indexed citations

Kesan, V. P., P.J. Restle, M. J. Tejwani, et al.. (2002). High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation. 25–28. 8 indexed citations

Wu, Ernest Y., J. Aitken, E. Nowak, et al.. (2002). Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides. 541–544. 67 indexed citations

10.

Wu, Ernest Y., et al.. (2002). Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure. 187–190. 49 indexed citations

11.

Acovic, A., Ching-Fang Hsu, L. C. Hsia, & J. Aitken. (1993). Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide. Solid-State Electronics. 36(9). 1353–1355. 6 indexed citations

12.

Reisman, Arnold, et al.. (1981). On the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated Pressure. Journal of The Electrochemical Society. 128(7). 1616–1619. 12 indexed citations

13.

Gaensslen, F.H. & J. Aitken. (1980). Sensitive technique for measuring small MOS gate currents. IEEE Electron Device Letters. 1(11). 231–233. 21 indexed citations

14.

Aitken, J.. (1979). 1 µm MOSFET VLSI technology: Part VIII—Radiation effects. IEEE Transactions on Electron Devices. 26(4). 372–379. 29 indexed citations

15.

Aitken, J.. (1979). 1 /spl mu/m MOSFET VLSI technology. VIII. Radiation effects. IEEE Journal of Solid-State Circuits. 14(2). 294–301. 12 indexed citations

16.

Aitken, J., Donald R. Young, & Kai Pan. (1978). Electron trapping in electron-beam irradiated SiO2. Journal of Applied Physics. 49(6). 3386–3391. 114 indexed citations

17.

DiMaria, D. J., Z. A. Weinberg, J. Aitken, & Donald R. Young. (1977). Use of photocurrent-voltage characteristics of MOS structures to determine insulator bulk trapped charge densities and centroids. Journal of Electronic Materials. 6(3). 207–219. 6 indexed citations

18.

DiMaria, D. J., Z. A. Weinberg, & J. Aitken. (1977). Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressing. Journal of Applied Physics. 48(3). 898–906. 133 indexed citations

19.

Solomon, P. M. & J. Aitken. (1977). Current and C-V instabilities in SiO2 at high fields. Applied Physics Letters. 31(3). 215–217. 13 indexed citations

20.

DiMaria, D. J., J. Aitken, & Donald R. Young. (1976). Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K. Journal of Applied Physics. 47(6). 2740–2743. 35 indexed citations

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