R. Bolam

687 citations

30 papers · 249 indexed · h-index 9

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Low-power high-performance VLSI design
- Ferroelectric and Negative Capacitance Devices
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
Hardware and Architecture

Papers in

Electrical and Electronic Engineering 29
- Semiconductor materials and devices 27
- Advancements in Semiconductor Devices and Circuit Design 22
- Integrated Circuits and Semiconductor Failure Analysis 10
- Ferroelectric and Negative Capacitance Devices 4
- Electrostatic Discharge in Electronics 3
- 3D IC and TSV technologies 2
Electronic, Optical and Magnetic Materials 5
- Copper Interconnects and Reliability 5

Co-authors: M. B. Ketchen Manjul Bhushan E. Leobandung G. Shahidi F. Assaderaghi W. Rausch D. Schepis A. Ajmera
Journals: Microelectronic Engineering (1 paper)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (1 paper)IEEE Transactions on Electron Devices (1 paper)Microelectronics Reliability (1 paper)IBM Journal of Research and Development (1 paper)
Partner nations: United States Spain Taiwan

In The Last Decade

R. Bolam

29 papers receiving 236 citations

Peers

Countries citing papers authored by R. Bolam

Since Specialization

Citations

This map shows the geographic impact of R. Bolam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Bolam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Bolam more than expected).

Fields of papers citing papers by R. Bolam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Bolam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Bolam. The network helps show where R. Bolam may publish in the future.

Co-authors

The 25 scholars most cited alongside R. Bolam, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Bolam Line = papers co-authored together R. Bolam links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction Ernest Y. Wu, H. Chihara, R. Bolam, Huai Huang, Huimei Zhou, 淳田上	2024	1
2	Applications of clustering model to bimodal distributions for dielectric breakdown Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Ernest Y. Wu, R. Bolam, R. G. Filippi, J. H. Stathis, Baozhen Li, Majela Guzmán Gómez	2017	6
3	A process-variation-cognizant efficient MOL and BEOL TDDB evaluation method Majela Guzmán Gómez, R. Bolam, Baozhen Li, B.P. Linder, Ernest Y. Wu	2017	2
4	Fundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applications Ernest Y. Wu, J. H. Stathis, Baozhen Li, Majela Guzmán Gómez, B.P. Linder, R. Bolam, Griselda Bonilla	2016	1
5	New breakdown data generation and analytics methodology to address BEOL and mol dielectric TDDB process development and technology qualification challenges Fen Chen, Tae-Suk Ro-Choi, M. Shinosky, B. Hitt, South Dakota Agricultural Experiment Station, R. Bolam, C. Christiansen, Kai Zhao, Katrine Bostrøm, Chunyan Tian, E Ayati	2014	31
6	Interconnect processes and reliability for RF technology Jeff Gambino, Yanping Chen, Xue-shi Wen, He Jing, R. Bolam, Bucknell C. Webb, C. Cabral, T. Shaw, Syed A.R. Abu Bakar	2011	4
7	A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS Dimitris P. Ioannou, Kai Zhao, Aditya Bansal, B.P. Linder, R. Bolam, E. Cartier, Tahmasebizad Farshad, Rahul Rao, Giuseppe La Rosa, Qian-hui Tang, Jeovane Lopes de Freitas, Koushik K. Das, J. H. Stathis, J. Aitken, D. Badami, S. Mittl	2011	11
8	High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies Zhenyu He, Shkapenko Al, R. Bolam, Syed A.R. Abu Bakar, F. Chen, Xue-shi Wen, Bo Yeon Hur, N. Feilchenfeld, Afrima Yosi, Ji-Tang Lee, Kathleen Humpa, Eduarda Alessandra dos Santos Scalco, D. Coolbaugh, Maggie Engler, J. Dunn	2008	2
9	A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies K. Vaed, Ji-Tang Lee, R. Bolam, Nina A. Bondarenko, D. Coolbaugh, D. Ahlgren, J. Dunn	2005	2
10	Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration Microelectronics Reliability ·Terence B. Hook, R. Bolam, William F. Clark, Jeroen Van De Rijt, N. Rovedo, Ajay Daniel J	2004	6
11	Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide Ernest Y. Wu, W. Lai, Mukesh Khare, J. Suñé, А.Р. Рустанов, J. A. McKenna, R. Bolam, D. Harmon, A. Strong	2003	18
12	Device and circuit design issues in SOI technology G. Shahidi, A. Ajmera, F. Assaderaghi, R. Bolam, H.J. Hovel, E. Leobandung, W. Rausch, D. K. Sadana, D. Schepis, L. Wagner, Maria Celi Chaves Vasconcelos, Wencheng Han, B. Davari	2003	10
13	Partially-depleted SOI technology for digital logic G. Shahidi, A. Ajmera, F. Assaderaghi, R. Bolam, E. Leobandung, W. Rausch, Lietuvos universiteto Kaune mečiui, D. Schepis, L. Wagner, Ramalingam Anuja, B. Davari	2003	25
14	Dielectric step stress and life stress comparison A. Strong, Ernest Y. Wu, R. Bolam	2002	1
15	Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation E. Leobandung, M. Sherony, J.W. Sleight, R. Bolam, F. Assaderaghi, Julie Cameron, D. Schepis, A. Ajmera, W. Rausch, B. Davari, G. Shahidi	2002	19
16	A 7.9/5.5 psec room/low temperature SOI CMOS F. Assaderaghi, W. Rausch, A. Ajmera, E. Leobandung, D. Schepis, L. Wagner, H.-J. Wann, R. Bolam, D. S. Yee, B. Davari, G. Shahidi	2002	19
17	A thermally activated gate current in off-state PMOSFETs S. Geißler, E.L. Adler, R. Bolam	2002	6
18	A 0.22 /spl mu/m CMOS-SOI technology with a Cu BEOL A. Ajmera, J.W. Sleight, F. Assaderaghi, R. Bolam, A. Bryant, Mark W. Coffey, H.J. Hovel, J. B. Lasky, E. Leobandung, W. Rausch, D. K. Sadana, D. Schepis, L. Wagner, Wencheng Han, B. Davari, G. Shahidi	1999	5
19	Impact of shallow trench isolation on reliability of buried- and surface-channel sub-/spl mu/m PFET 刘荔荔, R. Bolam, W. Hänsch	1995	4
20	Gate dielectric integrity and reliability in 0.5- mu m CMOS technology A. Strong, A. K. Stamper, R. Bolam, T. Furukawa, Aline Koechlin, T. R. Gow, Jibu K Panicker, S. Mittl, James Nakos, Курынин Роман Валерьевич	1993	3

About R. Bolam

R. Bolam is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Biomedical Engineering and Atomic and Molecular Physics, and Optics, having authored 30 papers that have together received 249 indexed citations. Recurring topics across this work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Copper Interconnects and Reliability (5 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Electrostatic Discharge in Electronics (3 papers), High voltage insulation and dielectric phenomena (3 papers) and 3D IC and TSV technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (244 citations), Hardware and Architecture (18 citations), Electronic, Optical and Magnetic Materials (39 citations), Materials Chemistry (20 citations) and Atomic and Molecular Physics, and Optics (12 citations). R. Bolam has collaborated with scholars based in United States, Spain and Taiwan. Frequent co-authors include M. B. Ketchen, Manjul Bhushan, E. Leobandung, G. Shahidi, F. Assaderaghi, W. Rausch, D. Schepis, A. Ajmera, B. Davari and Ernest Y. Wu. Their work appears in journals such as Microelectronic Engineering, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, IEEE Transactions on Electron Devices, Microelectronics Reliability and IBM Journal of Research and Development.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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