M. Brox

577 citations

19 papers · 276 indexed · h-index 8

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Advancements in PLL and VCO Technologies
- Thin-Film Transistor Technologies
- Electrostatic Discharge in Electronics
Hardware and Architecture

Papers in

Electrical and Electronic Engineering 18
- Semiconductor materials and devices 16
- Advancements in Semiconductor Devices and Circuit Design 14
- Integrated Circuits and Semiconductor Failure Analysis 7
- Ferroelectric and Negative Capacitance Devices 4
- Low-power high-performance VLSI design 2
- Advancements in PLL and VCO Technologies 2
Hardware and Architecture 2
- Parallel Computing and Optimization Techniques 1

Co-authors: W. Weber Wolfgang H. Krautschneider R. Thewes A. v. Schwerin N. S. Saks K. Goser Werner Weber H. Huber
Journals: IEEE Transactions on Electron Devices (4 papers)Microelectronic Engineering (3 papers)IEEE Electron Device Letters (1 paper)Applied Physics Letters (1 paper)MRS Bulletin (1 paper)
Partner nations: Germany United States

In The Last Decade

M. Brox

18 papers receiving 263 citations

Peers

Countries citing papers authored by M. Brox

Since Specialization

Citations

This map shows the geographic impact of M. Brox's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Brox with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Brox more than expected).

Fields of papers citing papers by M. Brox

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Brox. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Brox. The network helps show where M. Brox may publish in the future.

Co-authorship network

The 17 scholars most cited alongside M. Brox, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Brox Line = papers co-authored together M. Brox links everyone, so they are left out of the graph.

All Works

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19 of 19 papers shown

#	Work
1	Recent Evolution in the DRAM Interface: Mile-Markers Along Memory Lane IEEE Solid-State Circuits Magazine ·A. van Strien, Gaël Bescond, Dykas, حميدة بنت فاضل المسعود, Francis M. Mulcahy, M. Brox, 冯根胜, Sadiq Mahmood	2019	23
2	Achieving 16 Gb/s Single-Ended Signaling in High-Performance Graphics Memory A. van Strien, M. Brox, W. Spirkl, Márcio Eduardo Canto Pereira, Anne Neo, حميدة بنت فاضل المسعود, Dan Lin, Michael Richter, Peter Mayer, Sara Preisler, Ge Wang, Zhuo Wang, Olga Vorobieva, C. GLIDEWELL, C. Sanz-Velasco, Sapna Katarkar, Erra Fasira, T. Albin	2018	3
3	A 2Gb/s/pin 512Mb Graphics DRAM with NoiseReduction Techniques M. Brox, A. Monagheddu, Ge Wang, Feng Lu, VH Borja, A Vinogradov Alexander, V. L. Vereschagin, C. GLIDEWELL, A. T. Conlisk, AbdullahH Al Ramadan, Kiyotaka Asami, 義久堺, B. Piskorz, Elyana Fadian, W. Spirkl, Хаматова Татьяна Андреевна, T. Albin	2006	0
4	A Comparison of current SDRAM types: SDR, DDR, and RDRAM Advances in radio science ·Lodewijk Luken, M. Brox	2003	2
5	A physical lifetime prediction method for hot-carrier-stressed p-MOS transistors M. Brox, Khalid M.A. El-Moez, W. Weber	2002	6
6	Proof and quantification of dynamic effects in hot-carrier-induced degradation under pulsed operation conditions M. Brox, W. Weber	2002	2
7	Hot-carrier degradation of p-MOSFET's under analog operation IEEE Transactions on Electron Devices ·R. Thewes, M. Brox, K. Goser, W. Weber	1997	17
8	Hot-hole-induced negative oxide charges in n-MOSFETs IEEE Transactions on Electron Devices ·W. Weber, M. Brox, R. Thewes, N. S. Saks	1995	24
9	Hole kinetics in metal-oxide-semiconductor oxides investigated by a hot-carrier degradation experiment Journal of Applied Physics ·M. Brox, W. Weber	1994	1
10	A model for the time- and bias-dependence of p-MOSFET degradation IEEE Transactions on Electron Devices ·M. Brox, A. v. Schwerin, Tasos Anastasatos, W. Weber	1994	36
11	Physical Properties of Si0₂ and Its Interface to Silicon in Microelectronic Applications MRS Bulletin ·Werner Weber, M. Brox	1993	6
12	Hot carrier stress effects in p-MOSFETs: physical effects relevant for circuit operation Microelectronic Engineering ·W. Weber, M. Brox, A. v. Schwerin, R. Thewes	1993	8
13	Dynamic effects in hot-carrier degradation relevant for CMOS operation Microelectronic Engineering ·W. Weber, M. Brox	1992	6
14	Time dependence of hot-carrier degradation in LDD nMOSFETs Microelectronic Engineering ·Kim Jong-Bae, Wolfgang H. Krautschneider, M. Brox, W. Weber	1991	16
15	Explanation and model for the logarithmic time dependence of p-MOSFET degradation IEEE Electron Device Letters ·Kim Jong-Bae, M. Brox, Wolfgang H. Krautschneider, W. Weber	1991	67
16	Dynamic degradation in MOSFET's. I. The physical effects IEEE Transactions on Electron Devices ·M. Brox, W. Weber	1991	45
17	Annealing of fixed oxide charge induced by hot-carrier stressing European Solid-State Device Research Conference ·M. Brox, W. Weber	1990	7
18	Hot-Carrier Degradation Effects Relevant in Real Operation of MOSFETs W. Weber, Martin Borko, M. Brox, D. Schmitt‐Landsiedel	1990	2
19	Spectroscopic investigation of oxide states responsible for hot-carrier degradation Applied Physics Letters ·W. Weber, M. Brox, F. Hofmann, H. Huber, D. Jäger, D. Rieger	1989	5

About M. Brox

M. Brox is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Computer Networks and Communications, Materials Chemistry and Infectious Diseases, having authored 19 papers that have together received 276 indexed citations. Recurring topics across this work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Low-power high-performance VLSI design (2 papers), Advancements in PLL and VCO Technologies (2 papers), Interconnection Networks and Systems (1 paper) and Parallel Computing and Optimization Techniques (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (269 citations), Hardware and Architecture (7 citations), Statistics, Probability and Uncertainty (4 citations), Condensed Matter Physics (6 citations) and Statistics and Probability (4 citations). M. Brox has collaborated with scholars based in Germany and United States. Frequent co-authors include W. Weber, Wolfgang H. Krautschneider, R. Thewes, A. v. Schwerin, N. S. Saks, K. Goser, Werner Weber, H. Huber, F. Hofmann and D. Rieger. Their work appears in journals such as IEEE Transactions on Electron Devices, Microelectronic Engineering, IEEE Electron Device Letters, Applied Physics Letters and MRS Bulletin.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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