S. Rangan

440 total citations
12 papers, 323 citations indexed

About

S. Rangan is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Mechanics of Materials. According to data from OpenAlex, S. Rangan has authored 12 papers receiving a total of 323 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 2 papers in Computational Mechanics and 1 paper in Mechanics of Materials. Recurrent topics in S. Rangan's work include Advancements in Semiconductor Devices and Circuit Design (8 papers), Semiconductor materials and devices (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). S. Rangan is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (8 papers), Semiconductor materials and devices (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). S. Rangan collaborates with scholars based in United States, India and Japan. S. Rangan's co-authors include Everett C. C. Yeh, Neal Mielke, S. Krishnan, S. Ashok, S. Aur, A. Amerasekera, Guoqiang Xing, M. Rödder, S. V. Hattangady and Gong Chen and has published in prestigious journals such as Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena and MRS Proceedings.

In The Last Decade

S. Rangan

12 papers receiving 306 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Rangan United States	7	322	22	19	19	16	12	323
S. Aur United States	13	376 1.2×	15 0.7×	32 1.7×	27 1.4×	15 0.9×	36	383
R. Bolam United States	9	244 0.8×	18 0.8×	39 2.1×	20 1.1×	12 0.8×	30	249
A. Bajolet France	10	280 0.9×	23 1.0×	13 0.7×	23 1.2×	19 1.2×	19	288
M. Rafik France	12	345 1.1×	14 0.6×	21 1.1×	20 1.1×	16 1.0×	52	347
H. Katto Japan	10	255 0.8×	10 0.5×	16 0.8×	19 1.0×	36 2.3×	34	262
Jian‐Hsing Lee Taiwan	12	387 1.2×	26 1.2×	12 0.6×	11 0.6×	9 0.6×	74	393
Paul E. Nicollian United States	14	585 1.8×	21 1.0×	41 2.2×	64 3.4×	32 2.0×	29	591
S. C. Song United States	9	268 0.8×	7 0.3×	19 1.0×	39 2.1×	32 2.0×	37	280
S. Mittl United States	12	285 0.9×	8 0.4×	22 1.2×	16 0.8×	7 0.4×	28	292
S. Geißler United States	10	258 0.8×	51 2.3×	7 0.4×	17 0.9×	8 0.5×	19	272

Countries citing papers authored by S. Rangan

Since Specialization

Citations

This map shows the geographic impact of S. Rangan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Rangan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Rangan more than expected).

Fields of papers citing papers by S. Rangan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Rangan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Rangan. The network helps show where S. Rangan may publish in the future.

Co-authorship network of co-authors of S. Rangan

This figure shows the co-authorship network connecting the top 25 collaborators of S. Rangan. A scholar is included among the top collaborators of S. Rangan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Rangan. S. Rangan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

1.

Akbar, M.S., et al.. (2004). PMOS thin gate oxide recovery upon negative bias temperature stress. 683–684. 3 indexed citations

2.

Rangan, S., Neal Mielke, & Everett C. C. Yeh. (2004). Universal recovery behavior of negative bias temperature instability [PMOSFETs]. 14.3.1–14.3.4. 228 indexed citations

3.

Rangan, S., Mark W. Horn, S. Ashok, & Y. N. Mohapatra. (2003). Influence of hydrogen plasma treatment on boron implanted junctions in silicon. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(2). 781–784. 2 indexed citations

4.

Rangan, S., et al.. (2003). A model for channel hot carrier reliability degradation due to plasma damage in MOS devices. 370–374. 6 indexed citations

5.

Rangan, S., et al.. (2003). Multi-layered nanocavities in silicon with sequential helium implantation/anneal. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 206. 417–421. 11 indexed citations

6.

Krishnan, S., A. Amerasekera, S. Rangan, & S. Aur. (2002). Antenna device reliability for ULSI processing. 601–604. 23 indexed citations

7.

Sopori, Bhushan, Y. Zhang, R. C. Reedy, et al.. (2002). Trapping and Detrapping of H in Si: Impact on Diffusion Properties and Solar Cell Processing. MRS Proceedings. 719. 8 indexed citations

8.

Krishnan, S., et al.. (2002). Electron shading effects in high density plasma processing for very high aspect ratio structures. pv96. 160–163. 3 indexed citations

9.

Rangan, S., Sitaraman Krishnan, & S. Ashok. (2002). Process-induced damage-a study of hydrogen and deuterium passivation. 213–216. 3 indexed citations

10.

Krishnan, S., et al.. (2002). Inductively coupled plasma (ICP) metal etch damage to 35-60 A gate oxide. 731–734. 9 indexed citations

11.

Krishnan, S., S. Rangan, S. V. Hattangady, et al.. (2002). Assessment of charge-induced damage to ultra-thin gate MOSFETs. 445–448. 26 indexed citations

12.

Rangan, S., Mark W. Horn, & S. Ashok. (2000). Boron Implantation into Silicon Subject to Hydrogen Plasma. MRS Proceedings. 610. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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