J. Adkisson

476 citations

28 papers · 189 indexed · h-index 10

Electrical and Electronic Engineering
- Advancements in Semiconductor Devices and Circuit Design 14
- Semiconductor materials and devices 13
- Radio Frequency Integrated Circuit Design 12
- Integrated Circuits and Semiconductor Failure Analysis 6
- Photonic and Optical Devices 5
- 3D IC and TSV technologies 4
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 8
- Semiconductor materials and interfaces 5
Hardware and Architecture
Condensed Matter Physics
Instrumentation

Co-authors: J. B. Lasky J. S. Harris A. K. Stamper D.L. Harame W.-S. Lee Peter Gray Ting Ma Vibhor Jain
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Hardware and Architecture
Journals: IEEE Electron Device Letters (2 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (1 paper)Applied Physics Letters (1 paper)
Partner nations: United States Germany Japan

In The Last Decade

J. Adkisson

26 papers receiving 176 citations

Peers

Countries citing papers authored by J. Adkisson

Since Specialization

Citations

This map shows the geographic impact of J. Adkisson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Adkisson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Adkisson more than expected).

Fields of papers citing papers by J. Adkisson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Adkisson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Adkisson. The network helps show where J. Adkisson may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Adkisson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Adkisson Line = papers co-authored together J. Adkisson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications Sergio Bronchtein,Vibhor Jain,Erich Seidelmann,Caroline Gillett,赵若曦,J. Adkisson,Alvin Joseph	2018	4
2	On the Challenges of SiGe HBTs in Advanced BiCMOS Technology Toward Half THz f_MAX ECS Transactions ·Qizhi Liu,Vibhor Jain,Gabriela Latour,John J. Pekarik,J. Adkisson,Alvin Joseph,D.L. Harame	2016	1
3	SiGe HBTs in 90nm BiCMOS Technology Demonstrating f_T/f_MAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance ECS Transactions ·Jeffrey Zhao,J. Adkisson,Vibhor Jain,Gabriela Latour,Marwan Khater,Peter Gray,John J. Pekarik,H.T. Kim,Michela Bonetto,Melvyn Olivier,D.L. Harame	2014	9
4	Investigation of HBT layout impact on f<inf>T</inf> doubler performance for 90nm SiGe HBTs Vibhor Jain,B. Groß,John J. Pekarik,J. Adkisson,Gabriela Latour,Qizhi Liu,Peter Gray,R-H. Xu,Michela Bonetto,H.T. Kim,D.L. Harame	2014	8
5	Understanding the Effects of Epitaxy Artifacts on SiGe HBT Performance through Detailed Process/Device Simulation ECS Transactions ·Gabriela Latour,Jeffrey B. Johnson,Ondřej Rychlý,Peng Cheng,J. Adkisson,D.L. Harame	2013	1
6	Study of mutual and self-thermal resistance in 90nm SiGe HBTs Vibhor Jain,H.T. Kim,Peng Cheng,Gabriela Latour,John J. Pekarik,J. Adkisson,Qizhi Liu,Peter Gray,Kemal Berkay Tuzun,T. Keßler,D.L. Harame	2013	9
7	Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency Vibhor Jain,Peng Cheng,B. Groß,Gabriela Latour,John J. Pekarik,J. Adkisson,Qizhi Liu,Peter Gray,Kemal Berkay Tuzun,D.L. Harame,Michela Bonetto	2013	4
8	SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f_T/f_MAX through reduced R_b and C_cb parasitics Gabriela Latour,Okudaira,J. Adkisson,Marwan Khater,Peter Gray,Vibhor Jain,Oh Sang Hak,John J. Pekarik,Jeff Gambino,H.T. Kim,Froukje de Roo,Vasiliki Palieraki,Sebastian Engelmann,A. Pyzyna,Peng Cheng,D.L. Harame	2013	5
9	Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation ECS Transactions ·J. Adkisson,Marwan Khater,Jeff Gambino,Peng Cheng,Vibhor Jain,Gabriela Latour,C. Lavoie,Akil K. Sutton,Oleg Gluschenkov,Božikov,T.L. McDevitt,Sebastian Engelmann,Dan Hanfling,D.L. Harame	2013	1
10	Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology John J. Pekarik,J. Adkisson,Gabriela Latour,Peng Cheng,Michela Bonetto,Peter Gray,Vibhor Jain,Kemal Berkay Tuzun,Marwan Khater,Qizhi Liu,D.L. Harame	2012	4
11	Linewidth control effects on MOSFET ESD robustness Steven H. Voldman,Takashi Matsumori,Steven J. Holmes,J. Adkisson	2005	3
12	Simple, fast, 2.5-V CMOS logic with 0.25-μm channel lengths and damascene interconnect Charles W. Koburger,J. Adkisson,William F. Clark,B. Davari,S. Geißler,Kenneth Ssebambulidde,Lü HuoMing,Steven J. Holmes,Marta Nolte,M. Yang,S. Luce,A. Iordache,S. Mittl,James Nakos,S. R. Stiffler	2002	3
13	Plasma-induced gate-oxide charging issues for sub-0.5 μm complementary metal–oxide–semiconductor technologies Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. K. Stamper,J. B. Lasky,J. Adkisson	1995	21
14	Picosecond photoconductivity in polycrystalline gallium arsenide grown by molecular beam epitaxy Applied Physics Letters ·Jeffrey Morse,Raymond P. Mariella,J. Adkisson,Tasya Andiani Kartasasmita,James S. Harris,R.W. Dutton	1993	1
15	A monolithic GaAs-on-Si receiver front end for optical interconnect systems IEEE Journal of Solid-State Circuits ·李九玲,J. Adkisson,B.A. Wooley,J. S. Harris,T. I. Kamins	1993	9
16	Picosecond Pulsing And Sampling By GaAs Photodetectors Fabricated On Silicon Substrates Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Jeffrey Morse,M.D. Pocha,R.W. Dutton,Lau Frejstrup Suhr,J. Adkisson	1989	1
17	Effect of bulk recombination current on the current gain of GaAs/AlGaAs heterojunction bipolar transistors in GaAs-on-Si IEEE Electron Device Letters ·Ting Ma,W.-S. Lee,J. Adkisson,J. S. Harris	1989	13
18	Processing and characterization of GaAs grown into recessed silicon Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·J. Adkisson,T. I. Kamins,G Lagodski,J. S. Harris,S. J. Rosner,Gillian Reid,K. Nauka	1988	11
19	Growth of Gallium Arsenide on Silicon in Masked, Etched Trenches MRS Proceedings ·J. Adkisson,T. I. Kamins,G Lagodski,J. S. Harris,S. J. Rosner,K. Nauka,Gillian Reid	1988	1
20	Influence of buffer layer thickness on DC performance of GaAs/AlGaAs heterojunction bipolar transistors grown on silicon substrates IEEE Electron Device Letters ·Ting Ma,Daiju Ueda,W.-S. Lee,J. Adkisson,James S. Harris	1988	10

About J. Adkisson

J. Adkisson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Ceramics and Composites, having authored 28 papers that have together received 189 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor materials and devices (13 papers), Radio Frequency Integrated Circuit Design (12 papers), Semiconductor Quantum Structures and Devices (8 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Photonic and Optical Devices (5 papers), Semiconductor materials and interfaces (5 papers) and 3D IC and TSV technologies (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (181 citations), Atomic and Molecular Physics, and Optics (43 citations) and Hardware and Architecture (8 citations). J. Adkisson has collaborated with scholars based in United States, Germany and Japan. Frequent co-authors include J. B. Lasky, J. S. Harris, A. K. Stamper, D.L. Harame, W.-S. Lee, Peter Gray, Ting Ma, Vibhor Jain, John J. Pekarik and T. I. Kamins. Their work appears in journals such as IEEE Electron Device Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Applied Physics Letters, IEEE Journal of Solid-State Circuits and IBM Journal of Research and Development.

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