Dimitris P. Ioannou

554 total citations
33 papers, 312 citations indexed

About

Dimitris P. Ioannou is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture. According to data from OpenAlex, Dimitris P. Ioannou has authored 33 papers receiving a total of 312 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 2 papers in Hardware and Architecture. Recurrent topics in Dimitris P. Ioannou's work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). Dimitris P. Ioannou is often cited by papers focused on Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). Dimitris P. Ioannou collaborates with scholars based in United States, Canada and Germany. Dimitris P. Ioannou's co-authors include S. Mittl, Giuseppe La Rosa, D. Harmon, E. Cartier, W.W. Abadeer, Zhenyu He, Randy Wolf, Michael S. Gordon, J. Dunn and Alvin Joseph and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solid-State Electronics.

In The Last Decade

Dimitris P. Ioannou

32 papers receiving 295 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Dimitris P. Ioannou United States	11	308	34	29	16	11	33	312
I.-C. Chen United States	9	239 0.8×	29 0.9×	29 1.0×	25 1.6×	12 1.1×	22	253
S.C. Chen Taiwan	10	263 0.9×	39 1.1×	37 1.3×	20 1.3×	12 1.1×	22	273
S. C. Song United States	9	268 0.9×	39 1.1×	32 1.1×	21 1.3×	19 1.7×	37	280
Ching-Sung Ho China	6	268 0.9×	33 1.0×	16 0.6×	43 2.7×	9 0.8×	7	284
H.J. Tao Taiwan	9	199 0.6×	28 0.8×	30 1.0×	18 1.1×	9 0.8×	20	206
E. Simoen Belgium	12	370 1.2×	35 1.0×	63 2.2×	42 2.6×	19 1.7×	44	382
Patrick Kempf Canada	7	186 0.6×	28 0.8×	19 0.7×	37 2.3×	7 0.6×	16	200
W.W. Abadeer United States	8	321 1.0×	32 0.9×	24 0.8×	13 0.8×	18 1.6×	24	327
Wolfgang Gös Austria	8	393 1.3×	64 1.9×	41 1.4×	13 0.8×	8 0.7×	15	407
S. Krishnan United States	13	477 1.5×	60 1.8×	37 1.3×	19 1.2×	16 1.5×	34	499

Countries citing papers authored by Dimitris P. Ioannou

Since Specialization

Citations

This map shows the geographic impact of Dimitris P. Ioannou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dimitris P. Ioannou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dimitris P. Ioannou more than expected).

Fields of papers citing papers by Dimitris P. Ioannou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dimitris P. Ioannou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dimitris P. Ioannou. The network helps show where Dimitris P. Ioannou may publish in the future.

Co-authorship network of co-authors of Dimitris P. Ioannou

This figure shows the co-authorship network connecting the top 25 collaborators of Dimitris P. Ioannou. A scholar is included among the top collaborators of Dimitris P. Ioannou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dimitris P. Ioannou. Dimitris P. Ioannou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Liu, Wen, et al.. (2022). Robust Off-State TDDB Reliability of n-LDMOS. P26–1.

Ioannou, Dimitris P., et al.. (2018). Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs. 42. P–TX.2. 4 indexed citations

Ioannou, Dimitris P., et al.. (2018). Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy. Applied Physics Letters. 112(23). 3 indexed citations

Ioannou, Dimitris P., et al.. (2018). Junction profiling on hot carrier stressed device by dual lens electron holography and scanning capacitance microscopy. 1–4. 2 indexed citations

Ioannou, Dimitris P., et al.. (2017). 2D Junction Profiling on Semiconductor Device Reliability Fail. Microscopy and Microanalysis. 23(S1). 1510–1511. 1 indexed citations

Rosa, Giuseppe La, F. Chen, C. Kothandaraman, et al.. (2015). Impact of 3D copper TSV integration on 32SOI FEOL and BEOL reliability. 4C.1.1–4C.1.8. 3 indexed citations

Ortolland, C., D. Jaeger, Robert R. Robison, et al.. (2013). 2<sup>nd</sup> Generation dual-channel optimization with cSiGe for 22nm HP technology and beyond. 1. 9.4.1–9.4.4. 4 indexed citations

Mittl, S., Ernest Y. Wu, Dimitris P. Ioannou, et al.. (2012). Reliability characterization of 32nm high-k metal gate SOI technology with embedded DRAM. 2012. 6A.5.1–6A.5.7. 4 indexed citations

Krishnan, Siddarth, Vijay Narayanan, E. Cartier, et al.. (2012). Bias temperature instability in High-κ/metal gate transistors - Gate stack scaling trends. 5A.1.1–5A.1.6. 18 indexed citations

10.

Wu, Ernest Y., et al.. (2011). Influence of charge trapping on failure detection and its distributions for nFET high-κ stacks. 18.2.1–18.2.4. 6 indexed citations

11.

Ioannou, Dimitris P., Kai Zhao, Aditya Bansal, et al.. (2011). A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS. CR.1.1–CR.1.4. 11 indexed citations

12.

Yang, Yang, Kiran Chatty, Robert Gauthier, et al.. (2009). ESD time-domain characterization of high-k gate dielectric in a 32 nm CMOS technology. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 6 indexed citations

13.

Ioannou, Dimitris P., S. Mittl, & Giuseppe La Rosa. (2009). Positive Bias Temperature Instability Effects in nMOSFETs With $\hbox{HfO}_{2}/\hbox{TiN}$ Gate Stacks. IEEE Transactions on Device and Materials Reliability. 9(2). 128–134. 21 indexed citations

14.

Ioannou, Dimitris P., D. Harmon, & W.W. Abadeer. (2009). Investigation of Plasma Charging damage impact on device and gate dielectric reliability in 180nm SOI CMOS RF switch technology. 47. 1011–1013. 4 indexed citations

15.

Ioannou, Dimitris P., et al.. (2008). Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs. 26. 55–57. 5 indexed citations

16.

Ioannou, Dimitris P., et al.. (2007). Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOI CMOS transistors. Solid-State Electronics. 51(2). 268–277. 10 indexed citations

17.

Ioannou, Dimitris P., Dimitris P. Ioannou, Rahul Mishra, et al.. (2006). Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs. Solid-State Electronics. 50(6). 929–934. 5 indexed citations

18.

Liu, S.T., et al.. (2006). NBTI in SOI p-Channel MOS Field Effect Transistors. 17–21. 5 indexed citations

19.

Ioannou, Dimitris P., et al.. (2005). New insights on the hot-carrier characteristics of 55 nm PD SOI MOSFETs. 205–206. 1 indexed citations

20.

Salman, Akram, et al.. (2002). LP/LV ratioed DG-SOI logic with (intrinsically on) symmetric DG-MOSFET load. 66–67. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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