W.W. Abadeer

558 citations

24 papers · 327 indexed · h-index 8

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 22
- Advancements in Semiconductor Devices and Circuit Design 20
- Integrated Circuits and Semiconductor Failure Analysis 7
- Silicon Carbide Semiconductor Technologies 4
- Electrostatic Discharge in Electronics 3
- Advanced Memory and Neural Computing 2
Hardware and Architecture
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 1
Materials Chemistry
- Electronic and Structural Properties of Oxides 3

Co-authors: Ernest Y. Wu R.‐P. Vollertsen E. NowakLei HanJ. Aitken Dimitris P. Ioannou D. Harmon J. Slinkman
Cited by: Electrical and Electronic Engineering Hardware and Architecture Electronic, Optical and Magnetic Materials
Journals: Quality and Reliability Engineering International (2 papers)Microelectronics Reliability (2 papers)IBM Journal of Research and Development (1 paper)
Partner nations: United States Germany Switzerland

In The Last Decade

W.W. Abadeer

19 papers receiving 302 citations

Peers

Countries citing papers authored by W.W. Abadeer

Since Specialization

Citations

This map shows the geographic impact of W.W. Abadeer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.W. Abadeer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.W. Abadeer more than expected).

Fields of papers citing papers by W.W. Abadeer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.W. Abadeer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.W. Abadeer. The network helps show where W.W. Abadeer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside W.W. Abadeer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W.W. Abadeer Line = papers co-authored together W.W. Abadeer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Investigation of Plasma Charging damage impact on device and gate dielectric reliability in 180nm SOI CMOS RF switch technology Dimitris P. Ioannou,D. Harmon,W.W. Abadeer	2009	4
2	A capacitance reliability degradation mechanism in Hyper-abrupt junction varactors W.W. Abadeer,Kathleen Humpa,Jeffrey B. Johnson	2008	1
3	Mechanism of Stress-Induced Leakage Due to Plasma Charging and Effect of Oxide Thickness W.W. Abadeer,Parth Naidu,A. Acovic,Ashok K Ray	2005	0
4	Gate Material Dependence Of Process Charging Damage In Thin Gate Oxide A. Acovic,Ashok K Ray,J.Y.-C. Sun,Djouad Benachir,Toshiyuki Furukawa,Richard Geiger,K. Beyer,V. McGahay,Iain Orr,W.W. Abadeer	2005	0
5	Hot-carrier stress induced low-frequency noise degradation in 0.13 μm and 0.18 μm RF CMOS technologies Zhikang Bao,John D. Cressler,W.W. Abadeer,Xuefeng Liu,Jeovane Lopes de Freitas,Alvin Joseph	2004	0
6	Behavior of NBTI under AC dynamic circuit conditions W.W. Abadeer,V. Durante	2003	82
7	Challenges for accurate reliability projections in the ultra-thin oxide regime Ernest Y. Wu,W.W. Abadeer,Bernard Dagenais,Kazuma Nakazawa,Parth Naidu	2003	39
8	Nonlinear characteristics of Weibull breakdown distributions and its impact on reliability projection for ultra-thin oxides Ernest Y. Wu,E. Nowak,L.K. Han,Jennifer N. Resvick,W.W. Abadeer	2003	5
9	Design of submicron PMOSFETs for DRAM array applications Badih El-Kareh,W.W. Abadeer,刘荔荔	2002	0
10	Doping profile design for substrate hot carrier reliability in deep submicron field effect transistors 刘荔荔,W. Noble,W.W. Abadeer,S. Mittl,Wilfried Haensch	2002	5
11	Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure Ernest Y. Wu,E. Nowak,J. Aitken,W.W. Abadeer,Lei Han,Kumar S.V. Praveen	2002	49
12	Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection Ernest Y. Wu,S.-H. Lo,W.W. Abadeer,A. Acovic,D. A. Buchanan,Toshiyuki Furukawa,Mrs. Rita rani nayak,South Dakota Agricultural Experiment Station	2002	9
13	Correlation between theory and data for mechanisms leading to dielectric breakdown W.W. Abadeer,R.‐P. Vollertsen,R. Bolam,D. J. DiMaria,E. Cartier	2002	6
14	Reliability monitoring and screening issues with ultrathin gate dielectric devices IEEE Transactions on Device and Materials Reliability ·W.W. Abadeer	2001	2
15	Key measurements of ultrathin gate dielectric reliability and in-line monitoring IBM Journal of Research and Development ·W.W. Abadeer,Hui Men,Avs Sai Kumar,اذر عرب خزاعی,Eric Langlois,J.F.M.G. Bouwens,Thananh Khotpathoom,张亿琴,James McKenna,S. Mittl,M. Carmen Millón	1999	4
16	PHYSICAL MECHANISMS OF DIELECTRIC BREAKDOWN IN SiO2 FOR THE RANGE OF −150°C TO 150°C Quality and Reliability Engineering International ·W.W. Abadeer,R.‐P. Vollertsen	1996	2
17	Upper voltage and temperature limitations of stress conditions for relevant dielectric breakdown projections Quality and Reliability Engineering International ·R.‐P. Vollertsen,W.W. Abadeer	1995	8
18	Long-term bias temperature reliability of P/sup +/ polysilicon gated FET devices IEEE Transactions on Electron Devices ·W.W. Abadeer,刘荔荔,W. Hänsch,Udo Schwalke	1995	4
19	Bias temperature reliability of n/sup +/ and p/sup +/ polysilicon gated NMOSFETs and PMOSFETs W.W. Abadeer,刘荔荔,W. Hänsch,Udo Schwalke	1993	10
20	Magnetic Field Detection Using Coherent Magnetization Rotation in a Thin Magnetic Film Journal of Applied Physics ·W.W. Abadeer,IASMIN DOS SANTOS	1971	1

About W.W. Abadeer

W.W. Abadeer is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Computational Mechanics, having authored 24 papers that have together received 327 indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Silicon Carbide Semiconductor Technologies (4 papers), Electrostatic Discharge in Electronics (3 papers), Electronic and Structural Properties of Oxides (3 papers), Advanced Memory and Neural Computing (2 papers) and Semiconductor Quantum Structures and Devices (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (321 citations), Hardware and Architecture (13 citations), Electronic, Optical and Magnetic Materials (18 citations), Atomic and Molecular Physics, and Optics (24 citations) and Materials Chemistry (32 citations). W.W. Abadeer has collaborated with scholars based in United States, Germany and Switzerland. Frequent co-authors include Ernest Y. Wu, R.‐P. Vollertsen, E. Nowak, Lei Han, J. Aitken, Dimitris P. Ioannou, D. Harmon, J. Slinkman, Michael S. Gordon and J. Dunn. Their work appears in journals such as Quality and Reliability Engineering International, Microelectronics Reliability, IBM Journal of Research and Development, Journal of Applied Physics and IEEE Transactions on Electron Devices.

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